Structural perfection of Hg1−xCdxTe Grown by THM

The defect structure of single crystals of Hg1-xCdxTe grown by the travelling heater method (THM) has been investigated using X-ray double crystal topography and a chemical etching technique. The structural perfection is found to depend on the ratio of growth and solidus temperature Tg/Ts

Structural perfection of Hg1−xCdxTe Grown by THM

The defect structure of single crystals of Hg1-xCdxTe grown by the travelling heater method (THM) has been investigated using X-ray double crystal topography and a chemical etching technique. The structural perfection is found to depend on the ratio of growth and solidus temperature Tg/Ts

Origin of Imperfections in ⟨100⟩ SrLaAlO4\text{}_{4} Crystals

In Czochralski-grown SrLaAlO$\text{}_{4}$ crystals with ⟨100⟩ orientation, (001) planar faults extending through the entire crystal boule can frequently be observed. Chemical etching and transmission electron microscopy including energy dispersive X-ray spectroscopy were used to characterise their nucleation sites, these being located in the upper part of the crystal cone. Three serious sources were found: (1) lateral {001} facets, (2) grown-in defects in the seed, and (3) small particles of a second phase in the interior of the cone. These particles were identified as trigonal and cubic form of lanthanum oxide with a different Sr content

Structural and chemical characterization of semiconductor quantum structures

Keywords: semiconductor quantum structures, quantum dots, analytical transmission electron microscopy, quantitative high-resolution transmission electron microscopy Abstract. Conventional transmission electron microscopy (CTEM) and quantitative highresolution transmission electron microscopy (qHRTEM) are applied to study semiconductor quantum structures. The potential of combined use of CTEM and qHRTEM will be discussed in detail for Ga(Sb,As) quantum dot structures. The possibilities and limitations of the procedures will be outlined

Ordering in Compound Semiconductors: The Role of Transmission Electron Microscopy

In this paper, the ordering of ternary semiconductor compounds is briefly reviewed by means of a coordination polyhedron model. Long-range ordering of chalcopyrite and CuAu-type structures can be represented as an array of repeating A2B2 tetrahedra. A CuAu-type ordered phase in a chalcopyrite AIBIIICVI 2 compound is surrounded by an A3B+ AB3 boundary, whereas a CuPt-type ordered phase in a zinc-blende (A, B)IIICV compound is surrounded mainly by A2B2 type tetrahedra and thus restricted in size. Following the description of the ordered structure model, the detection of the asymmetry in ordering directions in (A, B)IIICV compounds is discussed. Some examples that employ transmission electron microscopy are presented