42 research outputs found
Applicability of the piecewise-linear approximation of the potential profile of undoped MQW heterostructures
Influence of parameters of barrier stratums to a drop of a threshold current in infra-red QW lasers
How to restrain Auger recombination predominance in the threshold of asymmetric bi-quantum-well lasers
Both radiative and nonradiative processes which occur in the active region of GaInAs鈥揋aInAsP鈥揑nP asymmetric multiple quantum-well
(AMQW) heterolasers with two quantum wells of different width (4 and 9 nm) are described. Several possible processes of non-radiative
Auger recombination which affect the temperature sensitivity of the lasing threshold are analyzed and the temperature dependencies of the
investigated processes are presented. For the above-mentioned AMQW heterostructure, it is shown that the influence of the Auger
recombination processes on the temperature behaviour of the lasing threshold can be restrained by operation at temperatures lower than
340 K and the cavity losses which do not exceed 60 cm-1
Auger Recombination Processes and Threshold Conditions in Asymmetric-Multiple-Quantum-Well Heterostructure Lasers
Different possible processes of non-radiative Auger recombination which occur in the active region
of quantum-well lasers are analyzed and the temperature dependence of the lasing threshold in the
GaInAs-GaInAsP-InP bi-quantum-well heterolasers with different widths of the quantum wells (4 and 9 nm) is
determined. Activated behavior of the Auger recombination is mentioned and respective effective parameters
of the processes are calculated. For described asymmetric quantum-well heterostructure lasers, it is shown that
the influence of the Auger recombination processes on the temperature behavior of the lasing threshold is not
essential until the temperature of the active region is lower than 360 K and the cavity losses do not exceed
80 cm-
Temperature dependence of the threshold and Auger recombination in asymmetric quantum-well heterolasers
The temperature dependence of the lasing threshold in the GaInAs-GaInAsP-InP bi-quantum-well heterolasers with
different widths of the quantum wells (4 and 9 nm) has been determined. Processes of non-radiative Auger recombination
which occur in the active region of the quantum-well lasers have been included into consideration. The analytical approach
for the evaluation of the characteristic temperature of the lasing threshold is presented. For described asymmetric quantumwell
heterostructure lasers, it is shown that the influence of Auger recombination processes on the temperature behavior of
the lasing threshold is not essential until the temperature of the active region is lower than 360 K and the cavity losses do
not exceed 80 cm-