Regional applicability and potential of salt-gradient solar ponds in the United States. Volume 1: Executive summary

Findings of a survey concerning salt ponds are summarized. The residential, commercial, and institutional buildings sector is discussed. The industrial process heat sector is considered. The agricultural process heat sector is examined. The electrical power sector is reviewed. The desalinization sector is considered

Saltless solar pond

A solar pond adapted for efficiently trapping and storing radiant solar energy without the use of a salt concentration gradient in the pond is disclosed. A body of water which may be fresh, saline, relatively clear or turbid, is substantially covered by a plurality of floating honeycomb panels. The honeycomb panels are made of a material such as glass which is pervious to short wave solar radiation but impervious to infrared radiation. Each honeycomb panel includes a multitude of honeycomb cells. The honeycomb panels are divided into the elongated honeycomb cells by a multitude of intermediate plates disposed between a bottom plate and top plate of the panel. The solar pond is well suited for providing hot water of approximately 85 to 90 C temperature for direct heating applications, and for electrical power generation

Driven classical diffusion with strong correlated disorder

We analyze one-dimensional motion of an overdamped classical particle in the presence of external disorder potential and an arbitrary driving force F. In thermodynamical limit the effective force-dependent mobility mu(F) is self-averaging, although the required system size may be exponentially large for strong disorder. We calculate the mobility mu(F) exactly, generalizing the known results in linear response (weak driving force) and the perturbation theory in powers of the disorder amplitude. For a strong disorder potential with power-law correlations we identify a non-linear regime with a prominent power-law dependence of the logarithm of mu(F) on the driving force.Comment: 4 pages, 2 figures include

Path integral for a relativistic Aharonov-Bohm-Coulomb system

The path integral for the relativistic spinless Aharonov-Bohm-Coulomb system is solved, and the energy spectra are extracted from the resulting amplitude.Comment: 6 pages, Revte

Numerical simulation of heavy fermions in an SU(2)_L x SU(2)_R symmetric Yukawa model

An exploratory numerical study of the influence of heavy fermion doublets on the mass of the Higgs boson is performed in the decoupling limit of a chiral $\rm SU(2)_L \otimes SU(2)_R$ symmetric Yukawa model with mirror fermions. The behaviour of fermion and boson masses is investigated at infinite bare quartic coupling on $4^3 \cdot 8$, $6^3 \cdot 12$ and $8^3 \cdot 16$ lattices. A first estimate of the upper bound on the renormalized quartic coupling as a function of the renormalized Yukawa-coupling is given.Comment: 15 pp + 11 Figures appended as Postscript file

Mass Spectrum and Bounds on the Couplings in Yukawa Models With Mirror-Fermions

The $\rm SU(2)_L\otimes SU(2)_R$ symmetric Yukawa model with mirror-fermions in the limit where the mirror-fermion is decoupled is studied both analytically and numerically. The bare scalar self-coupling $\lambda$ is fixed at zero and infinity. The phase structure is explored and the relevant phase transition is found to be consistent with a second order one. The fermionic mass spectrum close to that transition is discussed and a first non-perturbative estimate of the influence of fermions on the upper and lower bounds on the renormalized scalar self-coupling is given. Numerical results are confronted with perturbative predictions.Comment: 7 (Latex) page

Investigation of superlattice device structures

This report describes the investigation of growth properties, and the structure of epitaxial multilayer Si(Si(1x)Ge(x)) films grown on bulk Silicon Substrates. It also describes the fabrication and characterization of MOSFET and MESFET devices made on these epitaxial films. Films were grown in a CVD reactor using hydrides of Si and Ge with H2 and He as carrier gases. Growth temperatures were between 900 C and 1050 C with most films grown at 1000 C. Layer thickness was between 300A and 2000A and total film thickness was between 0.25 micro m and 7 micro m. The Ge content (X) in the alloy layers was between .05 and 0.2. N-type multilayer films grown on (100) p-type Si showed Hall mobility in the range 1000 to 1500 sq cm/v for an average carrier concentration of approx. 10 to the 16th power/cu cm. This is up to 50% higher than the Hall mobility observed in epitaxial Si films grown under the same conditions and with the same average carrier concentration. The mobility enhancement occurred in films with average carrier concentration (n) from 0.7 x 10 to the 16th power to 2 x 10 to the 17th power/cu cm, and total film thickness greater than 1.0 micro m. No mobility enhancement was seen in n-type multilayer films grown on (111) Si or in p-type multilayer films. The structure of the films was investigated was using SEM, TEM, AES, SIMS, and X-ray double crystal diffraction techniques. The film composition profile (AES, SIMS) showed that the transition region between layers is of the order of about 100A. The TEM examination revealed a well defined layered structure with fairly sharp interfaces and good crystalline quality. It also showed that the first few layers of the film (closest to the substrate) are uneven, most probably due to the initial growth pattern of the epitaxial film where growth occurs first in isolated islands that eventually growth and coalesce. The X-ray diffraction measurement determined the elastic strain and strain relief in the alloy layers of the film and the elastic strain in the intervening Si layers