Monolithic integration of an injection laser and a metal semiconductor field effect transistor

A new laser structure, the "T-laser", has been monolithically integrated with a MESFET on a semi-insulating GaAs substrate. Integration is achieved by means of a compatible structure in which the optically active layer of the laser also serves as the electrically active layer of the MESFET. Direct modulation of the laser by means of the transistor is demonstrated

Low-threshold room-temperature embedded heterostructure lasers

Room-temperature embedded double-heterostructure injection lasers have been fabricated using selective liquid phase epitaxial growth. Threshold current densities as low as 1.5 kA/cm^2 have been achieved in lasers grown through stripe windows opened in epitaxial GaAlAs masks

Embedded heterostructure epitaxy: A technique for two-dimensional thin-film definition

Selective multilayer epitaxial growth of GaAs-Ga1–xAlxAs through stripe openings in Al2O3 mask is reported. The technique results in prismatic layers of GaAs and Ga1–xAlxAs "embedded" in each other and leads to controllable uniform structures terminated by crystal faces. The crystal habit (shape) has features which are favorable for fabrication of cw injection lasers, laser arrays, and integrated optics components which require planar definition

GaAs-GaAIAs injection lasers on semi-insulating substrates using laterally diffused junctions

Low‐threshold GaAs‐GaAlAs lasers operating in a stable single mode have been fabricated using laterally diffused junctions. The lasers are fabricated on semi‐insulating substrates and can be integrated with other components

Integration of an injection laser with a Gunn oscillator on a semi-insulating GaAs substrates

The integration of an injection semiconductor laser with an active electronic device (Gunn oscillator) in a single epitaxial crystal device is demonstrated

Monolithic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode

A low threshold buried heterostructure laser, a metal-semiconductor field-effect transistor, and a p-i-n photodiode have been integrated on a semi-insulating GaAs substrate. The circuit was operated as a rudimentary optical repeater. The gain bandwidth product of the repeater was measured to be 178 MHz

Gallium Aluminum Arsenide/Gallium Arsenide Integrated Optical Repeater

A low threshold buried heterostructure laser, a metal-semiconductor field effect transistor (MESFET), and a photodiode, have for the first time, been monolithically integrated on a semi-insulating GaAs substrate. This integrated optoelectronic circuit (IOEC) was operated as a rudimentary optical repeater. The incident optical signal is detected by the photodiode, amplified by the MESFET, and converted back to light by the laser. The gain bandwidth product of the repeater was measured to be 178 MHz

High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate

A high-speed, high-responsivity GaAlAs/GaAs p-i-n photodiode has been fabricated on a GaAs semi-insulating substrate. The 75-µm-diam photodiode has a 3-dB bandwidth of 2.5 GHz and responsivity of 0.45 A/W at 8400 Å (external quantum efficiency of 65%). The diode is suitable for monolithic integration with other optoelectronic devices