Electronic States in Diffused Quantum Wells

In the present study we calculate the energy values and the spatial distributions of the bound electronic states in some diffused quantum wells. The calculations are performed within the virtual crystal approximation, $sp^3 s^*$ spin dependent empirical tight-binding model and the surface Green function matching method. A good agreement is found between our results and experimental data obtained for AlGaAs/GaAs quantum wells with thermally induced changes in the profile at the interfaces. Our calculations show that for diffusion lengths $L_{D}=20\div100$ {\AA} the transition (C3-HH3) is not sensitive to the diffusion length, but the transitions (C1-HH1), (C1-LH1), (C2-HH2) and (C2-LH2) display large "blue shifts" as L_{D} increases. For diffusion lengths $L_{D}=0\div20$ {\AA} the transitions (C1-HH1) and (C1-LH1) are less sensitive to the L_{D} changes than the (C3-HH3) transition. The observed dependence is explained in terms of the bound states spatial distributions.Comment: ReVTeX file, 7pp., no macros, 4 figures available on the reques

Vegetation and peat characteristics of restiad bogs on Chatham Island (Rekohu), New Zealand

Restiad bogs dominated by Sporadanthus traversii on Chatham Island, New Zealand, were sampled to correlate vegetation patterns and peat properties, and to compare with restiad systems dominated by Sporadanthus ferrugineus and Empodisma minus in the Waikato region, North Island, New Zealand. Classification and ordination resulted in five groups that reflected a disturbance gradient. The largest S. traversii group, which comprised plots from central, relatively intact bogs, had the lowest levels of total nitrogen (mean 1.20 mg cm-3), total phosphorus (mean 0.057 mg cm-3), total potassium (mean 0.083 mg cm-3), and available phosphorus (mean 18.6 μg cm-3). Modification by drainage, stock, and fires resulted in a decline of S. traversii and an increase of Gleichenia dicarpa fern cover, together with elevated peat nutrient levels and higher bulk density. Compared with peat dominated by Sporadanthus ferrugineus or Empodisma minus in relatively unmodified Waikato restiad bogs, Chatham Island peat under S. traversii has significantly higher total potassium, total nitrogen, available phosphorus, bulk density, and von Post decomposition indices, and significantly lower pH. Sporadanthus traversii and Empodisma minus have similar ecological roles in restiad bog development, occupying a relatively wide nutrient range, and regenerating readily from seed after fire. Despite differences in root morphology, S. traversii and E. minus are the major peat formers in raised restiad bogs on Chatham Island and in Waikato, respectively, and could be regarded as ecological equivalents

Acceptor binding energies in GaN and AlN

We employ effective mass theory for degenerate hole-bands to calculate the acceptor binding energies for Be, Mg, Zn, Ca, C and Si substitutional acceptors in GaN and AlN. The calculations are performed through the 6$\times$6 Rashba-Sheka-Pikus and the Luttinger-Kohn matrix Hamiltonians for wurtzite (WZ) and zincblende (ZB) crystal phases, respectively. An analytic representation for the acceptor pseudopotential is used to introduce the specific nature of the impurity atoms. The energy shift due to polaron effects is also considered in this approach. The ionization energy estimates are in very good agreement with those reported experimentally in WZ-GaN. The binding energies for ZB-GaN acceptors are all predicted to be shallower than the corresponding impurities in the WZ phase. The binding energy dependence upon the crystal field splitting in WZ-GaN is analyzed. Ionization levels in AlN are found to have similar `shallow' values to those in GaN, but with some important differences, which depend on the band structure parameterizations, especially the value of crystal field splitting used.Comment: REVTEX file - 1 figur

Effect of In-segregation on subbands in GaInNAs/GaAs quantum wells emission around 1.3 and 1.55 micron

10.1007/s11082-006-9042-8Optical and Quantum Electronics3812-14963-972OQEL

The effects of the intense laser field on bound states in Ga x In 1- x N y As 1- y N/GaAs single quantum well

We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in Ga x In 1- x N y As 1- y N/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We hope that our results can stimulate further investigations of the related physics, as well as device applications of group-III nitrides. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2011