10 research outputs found
Determination of luminance distribution of autostereoscopic 3D displays through calculation of angular profile
Simple method of characterizing the spatial luminance distribution at the user position for autostereoscopic 3-D display
Polarisation rotator consisting of two layers of twisted nematic LC, which shows little dependence on the initial polarisation direction and the wavelength
Response time characteristics of optical shutter of vertical alignment liquid crystal cell for obliquely incident light
Angular dependence of the performance of stereoscopic liquid-crystal-display (LCD) television using shutter glasses (SG)
Analysis of polarisation change in an electric field-driven liquid crystal lens of cylindrical type where LC are aligned twisted
Polarity‐Driven Atomic Displacements at the 2D Mg2TiO4‐MgO (001) Oxide Interface for Hosting Potential Interlayer Excitons
Abstract Interlayer excitons in solid‐state systems have emerged as candidates for realizing novel platforms ranging from excitonic transistors and optical qubits to exciton condensates. Interlayer excitons have been discovered in 2D transition metal dichalcogenides, with large exciton binding energies and the ability to form various van der Waals heterostructures. Here, an oxide system consisting of a single unit cell of Mg2TiO4 on MgO (001) is proposed as a platform for hosting interlayer excitons. Using a combination of density functional theory (DFT) calculations, molecular beam epitaxy growth, and in situ crystal truncation rod measurements, it is shown that the Mg2TiO4‐MgO interface can be precisely controlled to yield an internal electric field suitable for hosting interlayer excitons. The atoms in the polar Mg2TiO4 layers are observed to be displaced to reduce polarity at the interface with the non‐polar MgO (001) surface. Such polarity‐driven atomic displacements strongly affect electrostatics of the film and the interface, resulting in localization of filled and empty band‐edge states in different layers of the Mg2TiO4 film. The DFT calculations suggest that the electronic structure is favorable for localization of photoexcited electrons in the bottom layer and holes in the top layer, which may bind to form interlayer exciton states
Germanium Silicon Alloy Anode Material Capable of Tunable Overpotential by Nanoscale Si Segregation
We developed the novel electrode that enables fine control of overpotential by exploiting surface segregation that is the enrichment of one component at the surface of binary alloy. To realize this approach, we controlled the proportion of Si with low Li diffusivity at the surface by annealing the SiGe nanowire in H-2 environment at various temperatures. The resulting SiGe nanowires annealed at 850 degrees C exhibited high reversible capacity (>1031 mA.h.g(-1)), and long cycle life (400 cycles) with high opacity retention (89.0%) at 0.2 C. This superior battery performance is attributed to the remaining unlithiated part acting as support frame to prevent pulverization of anode material, which results from the fine-tuning of overpotential by controlling the degree of Si segregation.close0