3 research outputs found

    Mg<sub><i>x</i></sub>Zn<sub>1–<i>x</i></sub>O/Ag/Mg<sub><i>x</i></sub>Zn<sub>1–<i>x</i></sub>O Multilayers As High-Performance Transparent Conductive Electrodes

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    We report on the optical and electrical properties of Mg<sub><i>x</i></sub>Zn<sub>1–<i>x</i></sub>O/Ag/Mg<sub><i>x</i></sub>Zn<sub>1–<i>x</i></sub>O transparent conductive electrodes. The transmittance and sheet resistance of Mg<sub><i>x</i></sub>Zn<sub>1–<i>x</i></sub>O/Ag/Mg<sub><i>x</i></sub>Zn<sub>1–<i>x</i></sub>O multilayers deposited at room temperature were strongly dependent on the thickness and surface morphology of Ag layer. The optical absorption edge of Mg<sub><i>x</i></sub>Zn<sub>1–<i>x</i></sub>O/Ag/Mg<sub><i>x</i></sub>Zn<sub>1–<i>x</i></sub>O showed a blue shift with increasing Mg composition due to the increased band gap of Mg<sub><i>x</i></sub>Zn<sub>1–<i>x</i></sub>O. The Haack figure of merit value of Mg<sub>0.28</sub>Zn<sub>0.72</sub>O/Ag/Mg<sub>0.28</sub>Zn<sub>0.72</sub>O with a 14 nm-thick Ag layer, which has a sheet resistance of 6.36 Ξ©/sq and an average transmittance of 89.2% at wavelengths in the range from 350 to 780 nm, was 69% higher than that of a ZnO/Ag/ZnO multilayer electrode. These results indicate that Mg<sub><i>x</i></sub>Zn<sub>1–<i>x</i></sub>O/Ag/Mg<sub><i>x</i></sub>Zn<sub>1–<i>x</i></sub>O multilayers, which also show low surface roughness, can be used as highly conductive transparent electrodes in various optoelectronic devices operating over a wide wavelength region

    Spontaneous and Selective Nanowelding of Silver Nanowires by Electrochemical Ostwald Ripening and High Electrostatic Potential at the Junctions for High-Performance Stretchable Transparent Electrodes

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    Metal nanowires have been gaining increasing attention as the most promising stretchable transparent electrodes for emerging field of stretchable optoelectronic devices. Nanowelding technology is a major challenge in the fabrication of metal nanowire networks because the optoelectronic performances of metal nanowire networks are mostly limited by the high junction resistance between nanowires. We demonstrate the spontaneous and selective welding of Ag nanowires (AgNWs) by Ag solders via an electrochemical Ostwald ripening process and high electrostatic potential at the junctions of AgNWs. The AgNWs were welded by depositing Ag nanoparticles (AgNPs) on the conducting substrate and then exposing them to water at room temperature. The AgNPs were spontaneously dissolved in water to form Ag<sup>+</sup> ions, which were then reduced to single-crystal Ag solders selectively at the junctions of the AgNWs. Hence, the welded AgNWs showed higher optoelectronic and stretchable performance compared to that of as-formed AgNWs. These results indicate that electrochemical Ostwald ripening-based welding can be used as a promising method for high-performance metal nanowire electrodes in various next-generation devices such as stretchable solar cells, stretchable displays, organic light-emitting diodes, and skin sensors
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