3 research outputs found
Mg<sub><i>x</i></sub>Zn<sub>1β<i>x</i></sub>O/Ag/Mg<sub><i>x</i></sub>Zn<sub>1β<i>x</i></sub>O Multilayers As High-Performance Transparent Conductive Electrodes
We
report on the optical and electrical properties of Mg<sub><i>x</i></sub>Zn<sub>1β<i>x</i></sub>O/Ag/Mg<sub><i>x</i></sub>Zn<sub>1β<i>x</i></sub>O
transparent conductive electrodes. The transmittance and sheet resistance
of Mg<sub><i>x</i></sub>Zn<sub>1β<i>x</i></sub>O/Ag/Mg<sub><i>x</i></sub>Zn<sub>1β<i>x</i></sub>O multilayers deposited at room temperature were
strongly dependent on the thickness and surface morphology of Ag layer.
The optical absorption edge of Mg<sub><i>x</i></sub>Zn<sub>1β<i>x</i></sub>O/Ag/Mg<sub><i>x</i></sub>Zn<sub>1β<i>x</i></sub>O showed a blue shift with
increasing Mg composition due to the increased band gap of Mg<sub><i>x</i></sub>Zn<sub>1β<i>x</i></sub>O.
The Haack figure of merit value of Mg<sub>0.28</sub>Zn<sub>0.72</sub>O/Ag/Mg<sub>0.28</sub>Zn<sub>0.72</sub>O with a 14 nm-thick Ag layer,
which has a sheet resistance of 6.36 Ξ©/sq and an average transmittance
of 89.2% at wavelengths in the range from 350 to 780 nm, was 69% higher
than that of a ZnO/Ag/ZnO multilayer electrode. These results indicate
that Mg<sub><i>x</i></sub>Zn<sub>1β<i>x</i></sub>O/Ag/Mg<sub><i>x</i></sub>Zn<sub>1β<i>x</i></sub>O multilayers, which also show low surface roughness,
can be used as highly conductive transparent electrodes in various
optoelectronic devices operating over a wide wavelength region
Spontaneous and Selective Nanowelding of Silver Nanowires by Electrochemical Ostwald Ripening and High Electrostatic Potential at the Junctions for High-Performance Stretchable Transparent Electrodes
Metal nanowires have been gaining increasing attention as the most
promising stretchable transparent electrodes for emerging field of
stretchable optoelectronic devices. Nanowelding technology is a major
challenge in the fabrication of metal nanowire networks because the
optoelectronic performances of metal nanowire networks are mostly
limited by the high junction resistance between nanowires. We demonstrate
the spontaneous and selective welding of Ag nanowires (AgNWs) by Ag
solders via an electrochemical Ostwald ripening process and high electrostatic
potential at the junctions of AgNWs. The AgNWs were welded by depositing
Ag nanoparticles (AgNPs) on the conducting substrate and then exposing
them to water at room temperature. The AgNPs were spontaneously dissolved
in water to form Ag<sup>+</sup> ions, which were then reduced to single-crystal
Ag solders selectively at the junctions of the AgNWs. Hence, the welded
AgNWs showed higher optoelectronic and stretchable performance compared
to that of as-formed AgNWs. These results indicate that electrochemical
Ostwald ripening-based welding can be used as a promising method for
high-performance metal nanowire electrodes in various next-generation
devices such as stretchable solar cells, stretchable displays, organic
light-emitting diodes, and skin sensors
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