Non-monotonic temperature dependent transport in graphene grown by Chemical Vapor Deposition

Temperature-dependent resistivity of graphene grown by chemical vapor deposition (CVD) is investigated. We observe in low mobility CVD graphene device a strong insulating behavior at low temperatures and a metallic behavior at high temperatures manifesting a non-monotonic in the temperature dependent resistivity.This feature is strongly affected by carrier density modulation. To understand this anomalous temperature dependence, we introduce thermal activation of charge carriers in electron-hole puddles induced by randomly distributed charged impurities. Observed temperature evolution of resistivity is then understood from the competition among thermal activation of charge carriers, temperature-dependent screening and phonon scattering effects. Our results imply that the transport property of transferred CVD-grown graphene is strongly influenced by the details of the environmentComment: 7 pages, 3 figure

Single-electron transistor based on a silicon-on-insulator quantum wire fabricated by a side-wall patterning method

We propose and implement a promising fabrication technology for geometrically well-defined single-electron transistors based on a silicon-on-insulator quantum wire and side-wall depletion gates. The 30-nm-wide silicon quantum wire is defined by a combination of conventional photolithography and process technology, called a side-wall patterning method, and depletion gates for two tunnel junctions are formed by the doped polycrystalline silicon sidewall. The good uniformity of the wire suppresses unexpected potential barriers. The fabricated device shows clear single-electron tunneling phenomena by an electrostatically defined single island at liquid nitrogen temperature and insensitivity of the Coulomb oscillation period to gate bias conditions.open252

Decay Constants and Semileptonic Decays of Heavy Mesons in Relativistic Quark Model

We investigate the $B$ and $D$ mesons in the relativistic quark model by applying the variational method with the Gaussian wave function. We calculate the Fermi momentum parameter $p_{_F}$, and obtain $p_{_F} = 0.50 \sim 0.54$ GeV, which is almost independent of the input parameters, $\alpha_s$, $m_b$, $m_c$ and $m_{sp}$. We then calculate the ratio $f_B$/$f_D$, and obtain the result which is larger, by the factor of about 1.3, than $\sqrt{M_D / M_B}$ given by the naive nonrelativistic analogy. This result is in a good agreement with the recent Lattice calculations. We also calculate the ratio $(M_{B^*}-M_{B})$/$(M_{D^*}-M_{D})$. In these calculations the wave function at origin $\psi (0)$ is essential. We also determine $p_{_F}$ by comparing the theoretical prediction of the ACCMM model with the lepton energy spectrum of $B \rightarrow e \nu X$ from the recent ARGUS analysis, and find that $p_{_F}=0.27~\pm~^{0.22}_{0.27}$ GeV, when we use $m_c=1.5$ GeV. However, this experimentally determined value of $p_{_F}$ is strongly dependent on the value of input parameter $m_c$.Comment: 15 pages (Latex) (uses epsfig.sty, 1 figure appended as a uuencoded compressed ps-file

Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)

We investigate the effect of Cu concentration On-state resistance retention characteristics of W/Cu/Ti/HfO2/Pt memory cell. The development of RRAM device for application depends on the understanding of the failure mechanism and the key parameters for device optimization. In this study, we develop analytical expression for cations (Cu+) diffusion model using Gaussian distribution for detailed analysis of data retention time at high temperature. It is found that the improvement of data retention time depends not only on the conductive filament (CF) size but also on Cu atoms concentration density in the CF. Based on the simulation result, better data retention time is observed for electron wave function associated with Cu+ overlap and an extended state formation. This can be verified by analytical calculation of Cu atom defects inside the filament, based on Cu+ diffusion model. The importance of Cu diffusion for the device reliability and the corresponding local temperature of the filament were analyzed by COMSOL Multiphysics simulation. (C) 2016 Author(s).1152Ysciescopu

Suppression of ferromagnetic ordering in doped manganites: Effects of the superexchange interaction

From a Monte Carlo study of the ferromagnetic Kondo lattice model for doped manganites, including the antiferromagnetic superexchange interaction ($J_{AF}$), we found that the ferromagnetic ordering was suppressed as $J_{AF}$ increased. The ferromagnetic transition temperature $T_c$, as obtained from a mean field fit to the calculated susceptibilities, was found to decrease monotonically with increasing $J_{AF}$. Further, the suppression in $T_c$ scales with the bandwidth narrowing induced by the antiferromagnetic frustration originating from $J_{AF}$. From these results, we propose that the change in the superexchange interaction strength between the $t_{2g}$ electrons of the Mn ions is one of the mechanisms responsible for the suppression in $T_c$ observed in manganites of the type (La$_{0.7-y}$Pr$_{y}$)Ca$_{0.3}$MnO$_3$.Comment: 5 pages, 6 figures. To appear in PR

Translational repression of mouse mu opioid receptor expression via leaky scanning

Mu opioid receptor (MOR) expression is under temporal and spatial controls, but expression levels of the MOR gene are relatively low in vivo. In addition to transcriptional regulations, upstream AUGs (uAUGs) and open reading frames (uORFs) profoundly affect the translation of the primary ORF and thus the protein levels in several genes. The 5′-untranslated region (UTR) of mouse MOR mRNA contains three uORFs preceding the MOR main initiation codon. In MOR-fused EGFP or MOR promoter/luciferase reporter constructs, mutating each uAUG individually or in combinations increased MOR transient heterologous expression in neuroblastoma NMB and HEK293 cells significantly. Translation of such constructs increased up to 3-fold without altering the mRNA levels if either the third uAUG or both the second and third AUGs were mutated. Additionally, these uAUG-mediated translational inhibitions were independent of their peptide as confirmed by internal mutation analyses in each uORF. Translational studies indicated that protein syntheses were initiated at these uAUG initiation sites, with the third uAUG initiating the highest translation level. These results support the hypothesis that uORFs in mouse MOR mRNA act as negative regulators through a ribosome leaky scanning mechanism. Such leaky scanning resulted in the suppression of mouse MOR under normal conditions

Quantum Gambling Using Two Nonorthogonal States

We give a (remote) quantum gambling scheme that makes use of the fact that quantum nonorthogonal states cannot be distinguished with certainty. In the proposed scheme, two participants Alice and Bob can be regarded as playing a game of making guesses on identities of quantum states that are in one of two given nonorthogonal states: if Bob makes a correct (an incorrect) guess on the identity of a quantum state that Alice has sent, he wins (loses). It is shown that the proposed scheme is secure against the nonentanglement attack. It can also be shown heuristically that the scheme is secure in the case of the entanglement attack.Comment: no essential correction, 4 pages, RevTe

Selective Growth of Epitaxial Sr\u3csub\u3e2\u3c/sub\u3eIrO\u3csub\u3e4\u3c/sub\u3e by Controlling Plume Dimensions in Pulsed Laser Deposition

We report that epitaxial Sr2IrO4 thin-films can be selectively grown using pulsed laser deposition (PLD). Due to the competition between the Ruddlesden-Popper phases of strontium iridates (Srn+1IrnO3n+1), conventional PLD methods often result in mixed phases of Sr2IrO4 (n = 1), Sr3Ir2O7 (n = 2), and SrIrO3 (n = ∞). We have discovered that reduced PLD plume dimensions and slow deposition rates are the key for stabilizing pure Sr2IrO4 phase thin-films, identified by real-time in-situ monitoring of their optical spectra. The slow film deposition results in a thermodynamically stable TiO2\\SrO\IrO2\SrO\SrO configuration at an interface rather than TiO2\\SrO\SrO\IrO2\SrO between a TiO2-terminated SrTiO3 substrate and a Sr2IrO4 thin film, which is consistent with other layered oxides grown by molecular beam epitaxy. Our approach provides an effective method for using PLD to achieve pure phase thin-films of layered materials that are susceptible to several energetically competing phases