Fermi surface and superconductivity in low-density high-mobility {\delta}-doped SrTiO3

The electronic structure of low-density n-type SrTiO3 delta-doped heterostructures is investigated by angular dependent Shubnikov-de Haas oscillations. In addition to a controllable crossover from a three- to two-dimensional Fermi surface, clear beating patterns for decreasing dopant layer thicknesses are found. These indicate the lifting of the degeneracy of the conduction band due to subband quantization in the two-dimensional limit. Analysis of the temperature-dependent oscillations shows that similar effective masses are found for all components, associated with the splitting of the light electron pocket. The dimensionality crossover in the superconducting state is found to be distinct from the normal state, resulting in a rich phase diagram as a function of dopant layer thickness.Comment: 4 pages, 5 figures, submitted for publicatio

B−>πlνB -> \pi l \nu Form Factors Calculated on the Light-Front

A consistent treatment of $B\rightarrow \pi l \nu$ decay is given on the light-front. The $B$ to $\pi$ transition form factors are calculated in the entire physical range of momentum transfer for the first time. The valence-quark contribution is obtained using relativistic light-front wave functions. Higher quark-antiquark Fock-state of the $B$-meson bound state is represented effectively by the $|B^*\pi\rangle$ configuration, and its effect is calculated in the chiral perturbation theory. Wave function renormalization is taken into account consistently. The $|B^*\pi\rangle$ contribution dominates near the zero-recoil point ($q^2\simeq 25$ GeV$^2$), and decreases rapidly as the recoil momentum increases. We find that the calculated form factor $f_+(q^2)$ follows approximately a dipole $q^2$-dependence in the entire range of momentum transfer.Comment: Revtex, 19 pages, 9 figure

Temperature Dependent Polarity Reversal in Au/Nb:SrTiO3 Schottky Junctions

We have observed temperature-dependent reversal of the rectifying polarity in Au/Nb:SrTiO3 Schottky junctions. By simulating current-voltage characteristics we have found that the permittivity of SrTiO3 near the interface exhibits temperature dependence opposite to that observed in the bulk, significantly reducing the barrier width. At low temperature, tunneling current dominates the junction transport due both to such barrier narrowing and to suppressed thermal excitations. The present results demonstrate that novel junction properties can be induced by the interface permittivity

Metal-to-insulator transition in anatase TiO2 thin films induced by growth rate modulation

We demonstrate control of the carrier density of single phase anatase TiO2 thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity and the intensity of the photoluminescence spectra of these TiO2 samples, both of which correlate with the number of oxygen vacancies, are shown to depend strongly on the growth rate. A quantitative model is used to explain the carrier density changes.Comment: 13 pages 3 figure

Coexistence of two- and three-dimensional Shubnikov-de Haas oscillations in Ar^+ -irradiated KTaO_3

We report the electron doping in the surface vicinity of KTaO_3 by inducing oxygen-vacancies via Ar^+ -irradiation. The doped electrons have high mobility (> 10^4 cm^2/Vs) at low temperatures, and exhibit Shubnikov-de Haas oscillations with both two- and three-dimensional components. A disparity of the extracted in-plane effective mass, compared to the bulk values, suggests mixing of the orbital characters. Our observations demonstrate that Ar^+ -irradiation serves as a flexible tool to study low dimensional quantum transport in 5d semiconducting oxides

The radiation from slots in truncated dielectric-covered surfaces

A theoretical approach based on the geometrical theory of diffraction is used to study the electromagnetic radiation from a narrow slot in a dielectric-covered perfectly-conducting surface terminated at an edge. The total far-zone field is composed of a geometrical optics field and a diffracted field. The geometrical optics field is the direct radiation from the slot to the field point. The slot also generates surface waves which are incident at the termination of the dielectric cover, where singly-diffracted rays and reflected surface waves are excited. The diffraction and reflection coefficients are obtained from the canonical problem of the diffraction of a surface wave by a right-angle wedge where the dielectric-covered surface is approximated by an impedance surface. This approximation is satisfactory for a very thin cover; however, the radiation from its vertical and faces cannot be neglected in treating the thicker dielectric cover. This is taken into account by using a Kirchhoff-type approximation, which contributes a second term to the diffraction coefficient previously obtained. The contributions from the geometrical optics field, the singly-diffracted rays and all significant multiply-diffracted rays are summed to give the total radiation. Calculated and measured patterns are found to be in good agreement

Electronic charges and electric potential at LaAlO3/SrTiO3 interfaces studied by core-level photoemission spectroscopy

We studied LaAlO3/SrTiO3 interfaces for varying LaAlO3 thickness by core-level photoemission spectroscopy. In Ti 2p spectra for conducting "n-type" interfaces, Ti3+ signals appeared, which were absent for insulating "p-type" interfaces. The Ti3+ signals increased with LaAlO3 thickness, but started well below the critical thickness of 4 unit cells for metallic transport. Core-level shifts with LaAlO3 thickness were much smaller than predicted by the polar catastrophe model. We attribute these observations to surface defects/adsorbates providing charges to the interface even below the critical thickness