6 research outputs found
Enhanced Power Output of a Triboelectric Nanogenerator using Poly(dimethylsiloxane) Modified with Graphene Oxide and Sodium Dodecyl Sulfate
In this work, a new
approach to modifying polyÂ(dimethylsiloxane) (PDMS) as a negative
triboelectric material using graphene oxide (GO) and a sodium dodecyl
sulfate (SDS) surfactant was reported. A porous PDMS@GO@SDS composite
triboelectric nanogenerator (TENG) could deliver an output voltage
and current of up to 438 V and 11 μA/cm<sup>2</sup>, respectively.
These values were 3-fold higher than those of the flat PDMS. The superior
performance is attributed to the intensified negative charges on PDMS
from the oxygen functional groups of GO and anionic head groups of
the SDS molecules. The outstanding performance and straightforward,
low-cost fabrication process of the PDMS@GO@SDS TENG would be beneficial
for the further development of powerful NGs integrated into wearable
electronics and self-charging power cells
Enhanced Power Output of a Triboelectric Nanogenerator using Poly(dimethylsiloxane) Modified with Graphene Oxide and Sodium Dodecyl Sulfate
In this work, a new
approach to modifying polyÂ(dimethylsiloxane) (PDMS) as a negative
triboelectric material using graphene oxide (GO) and a sodium dodecyl
sulfate (SDS) surfactant was reported. A porous PDMS@GO@SDS composite
triboelectric nanogenerator (TENG) could deliver an output voltage
and current of up to 438 V and 11 μA/cm<sup>2</sup>, respectively.
These values were 3-fold higher than those of the flat PDMS. The superior
performance is attributed to the intensified negative charges on PDMS
from the oxygen functional groups of GO and anionic head groups of
the SDS molecules. The outstanding performance and straightforward,
low-cost fabrication process of the PDMS@GO@SDS TENG would be beneficial
for the further development of powerful NGs integrated into wearable
electronics and self-charging power cells
Structurally Controlled Large-Area 10 nm Pitch Graphene Nanomesh by Focused Helium Ion Beam Milling
Graphene
nanomesh (GNM) is formed by patterning graphene with nanometer-scale
pores separated by narrow necks. GNMs are of interest due to their
potential semiconducting characteristics when quantum confinement
in the necks leads to an energy gap opening. GNMs also have potential
for use in phonon control and water filtration. Furthermore, physical
phenomena, such as spin qubit, are predicted at pitches below 10 nm
fabricated with precise structural control. Current GNM patterning
techniques suffer from either large dimensions or a lack of structural
control. This work establishes reliable GNM patterning with a sub-10
nm pitch and an < 4 nm pore diameter by the direct helium ion beam
milling of suspended monolayer graphene. Due to the simplicity of
the method, no postpatterning processing is required. Electrical transport
measurements reveal an effective energy gap opening of up to ∼450
meV. The reported technique combines the highest resolution with structural
control and opens a path toward GNM-based, room-temperature semiconducting
applications
Structurally Controlled Large-Area 10 nm Pitch Graphene Nanomesh by Focused Helium Ion Beam Milling
Graphene
nanomesh (GNM) is formed by patterning graphene with nanometer-scale
pores separated by narrow necks. GNMs are of interest due to their
potential semiconducting characteristics when quantum confinement
in the necks leads to an energy gap opening. GNMs also have potential
for use in phonon control and water filtration. Furthermore, physical
phenomena, such as spin qubit, are predicted at pitches below 10 nm
fabricated with precise structural control. Current GNM patterning
techniques suffer from either large dimensions or a lack of structural
control. This work establishes reliable GNM patterning with a sub-10
nm pitch and an < 4 nm pore diameter by the direct helium ion beam
milling of suspended monolayer graphene. Due to the simplicity of
the method, no postpatterning processing is required. Electrical transport
measurements reveal an effective energy gap opening of up to ∼450
meV. The reported technique combines the highest resolution with structural
control and opens a path toward GNM-based, room-temperature semiconducting
applications
Structurally Controlled Large-Area 10 nm Pitch Graphene Nanomesh by Focused Helium Ion Beam Milling
Graphene
nanomesh (GNM) is formed by patterning graphene with nanometer-scale
pores separated by narrow necks. GNMs are of interest due to their
potential semiconducting characteristics when quantum confinement
in the necks leads to an energy gap opening. GNMs also have potential
for use in phonon control and water filtration. Furthermore, physical
phenomena, such as spin qubit, are predicted at pitches below 10 nm
fabricated with precise structural control. Current GNM patterning
techniques suffer from either large dimensions or a lack of structural
control. This work establishes reliable GNM patterning with a sub-10
nm pitch and an < 4 nm pore diameter by the direct helium ion beam
milling of suspended monolayer graphene. Due to the simplicity of
the method, no postpatterning processing is required. Electrical transport
measurements reveal an effective energy gap opening of up to ∼450
meV. The reported technique combines the highest resolution with structural
control and opens a path toward GNM-based, room-temperature semiconducting
applications
Enhanced Power Output of a Triboelectric Nanogenerator using Poly(dimethylsiloxane) Modified with Graphene Oxide and Sodium Dodecyl Sulfate
In this work, a new
approach to modifying polyÂ(dimethylsiloxane) (PDMS) as a negative
triboelectric material using graphene oxide (GO) and a sodium dodecyl
sulfate (SDS) surfactant was reported. A porous PDMS@GO@SDS composite
triboelectric nanogenerator (TENG) could deliver an output voltage
and current of up to 438 V and 11 μA/cm<sup>2</sup>, respectively.
These values were 3-fold higher than those of the flat PDMS. The superior
performance is attributed to the intensified negative charges on PDMS
from the oxygen functional groups of GO and anionic head groups of
the SDS molecules. The outstanding performance and straightforward,
low-cost fabrication process of the PDMS@GO@SDS TENG would be beneficial
for the further development of powerful NGs integrated into wearable
electronics and self-charging power cells