Enhanced Power Output of a Triboelectric Nanogenerator using Poly(dimethylsiloxane) Modified with Graphene Oxide and Sodium Dodecyl Sulfate

In this work, a new approach to modifying poly­(dimethylsiloxane) (PDMS) as a negative triboelectric material using graphene oxide (GO) and a sodium dodecyl sulfate (SDS) surfactant was reported. A porous PDMS@GO@SDS composite triboelectric nanogenerator (TENG) could deliver an output voltage and current of up to 438 V and 11 μA/cm², respectively. These values were 3-fold higher than those of the flat PDMS. The superior performance is attributed to the intensified negative charges on PDMS from the oxygen functional groups of GO and anionic head groups of the SDS molecules. The outstanding performance and straightforward, low-cost fabrication process of the PDMS@GO@SDS TENG would be beneficial for the further development of powerful NGs integrated into wearable electronics and self-charging power cells

Enhanced Power Output of a Triboelectric Nanogenerator using Poly(dimethylsiloxane) Modified with Graphene Oxide and Sodium Dodecyl Sulfate

In this work, a new approach to modifying poly­(dimethylsiloxane) (PDMS) as a negative triboelectric material using graphene oxide (GO) and a sodium dodecyl sulfate (SDS) surfactant was reported. A porous PDMS@GO@SDS composite triboelectric nanogenerator (TENG) could deliver an output voltage and current of up to 438 V and 11 μA/cm², respectively. These values were 3-fold higher than those of the flat PDMS. The superior performance is attributed to the intensified negative charges on PDMS from the oxygen functional groups of GO and anionic head groups of the SDS molecules. The outstanding performance and straightforward, low-cost fabrication process of the PDMS@GO@SDS TENG would be beneficial for the further development of powerful NGs integrated into wearable electronics and self-charging power cells

Structurally Controlled Large-Area 10 nm Pitch Graphene Nanomesh by Focused Helium Ion Beam Milling

Graphene nanomesh (GNM) is formed by patterning graphene with nanometer-scale pores separated by narrow necks. GNMs are of interest due to their potential semiconducting characteristics when quantum confinement in the necks leads to an energy gap opening. GNMs also have potential for use in phonon control and water filtration. Furthermore, physical phenomena, such as spin qubit, are predicted at pitches below 10 nm fabricated with precise structural control. Current GNM patterning techniques suffer from either large dimensions or a lack of structural control. This work establishes reliable GNM patterning with a sub-10 nm pitch and an < 4 nm pore diameter by the direct helium ion beam milling of suspended monolayer graphene. Due to the simplicity of the method, no postpatterning processing is required. Electrical transport measurements reveal an effective energy gap opening of up to ∼450 meV. The reported technique combines the highest resolution with structural control and opens a path toward GNM-based, room-temperature semiconducting applications

Structurally Controlled Large-Area 10 nm Pitch Graphene Nanomesh by Focused Helium Ion Beam Milling

Graphene nanomesh (GNM) is formed by patterning graphene with nanometer-scale pores separated by narrow necks. GNMs are of interest due to their potential semiconducting characteristics when quantum confinement in the necks leads to an energy gap opening. GNMs also have potential for use in phonon control and water filtration. Furthermore, physical phenomena, such as spin qubit, are predicted at pitches below 10 nm fabricated with precise structural control. Current GNM patterning techniques suffer from either large dimensions or a lack of structural control. This work establishes reliable GNM patterning with a sub-10 nm pitch and an < 4 nm pore diameter by the direct helium ion beam milling of suspended monolayer graphene. Due to the simplicity of the method, no postpatterning processing is required. Electrical transport measurements reveal an effective energy gap opening of up to ∼450 meV. The reported technique combines the highest resolution with structural control and opens a path toward GNM-based, room-temperature semiconducting applications

Structurally Controlled Large-Area 10 nm Pitch Graphene Nanomesh by Focused Helium Ion Beam Milling

Graphene nanomesh (GNM) is formed by patterning graphene with nanometer-scale pores separated by narrow necks. GNMs are of interest due to their potential semiconducting characteristics when quantum confinement in the necks leads to an energy gap opening. GNMs also have potential for use in phonon control and water filtration. Furthermore, physical phenomena, such as spin qubit, are predicted at pitches below 10 nm fabricated with precise structural control. Current GNM patterning techniques suffer from either large dimensions or a lack of structural control. This work establishes reliable GNM patterning with a sub-10 nm pitch and an < 4 nm pore diameter by the direct helium ion beam milling of suspended monolayer graphene. Due to the simplicity of the method, no postpatterning processing is required. Electrical transport measurements reveal an effective energy gap opening of up to ∼450 meV. The reported technique combines the highest resolution with structural control and opens a path toward GNM-based, room-temperature semiconducting applications

Enhanced Power Output of a Triboelectric Nanogenerator using Poly(dimethylsiloxane) Modified with Graphene Oxide and Sodium Dodecyl Sulfate

In this work, a new approach to modifying poly­(dimethylsiloxane) (PDMS) as a negative triboelectric material using graphene oxide (GO) and a sodium dodecyl sulfate (SDS) surfactant was reported. A porous PDMS@GO@SDS composite triboelectric nanogenerator (TENG) could deliver an output voltage and current of up to 438 V and 11 μA/cm², respectively. These values were 3-fold higher than those of the flat PDMS. The superior performance is attributed to the intensified negative charges on PDMS from the oxygen functional groups of GO and anionic head groups of the SDS molecules. The outstanding performance and straightforward, low-cost fabrication process of the PDMS@GO@SDS TENG would be beneficial for the further development of powerful NGs integrated into wearable electronics and self-charging power cells