Achieving highly-enhanced UV photoluminescence and its origin in ZnO nanocrystalline films

AbstractZnO is an efficient luminescent material in the UV-range ∼3.4 eV with a wide range of applications in optical technologies. Sputtering is a cost-effective and relatively straightforward growth technique for ZnO films; however, most as-grown films are observed to contain intrinsic defects which can significantly diminish the desirable UV-emission. In this research the defect dynamics and optical properties of ZnO sputtered films were studied via post-growth annealing in Ar or O2 ambient, with X-ray diffraction (XRD), imaging, transmission and Urbach analysis, Raman scattering, and photoluminescence (PL). The imaging, XRD, Raman and Urbach analyses indicate significant improvement in crystal morphology and band-edge characteristics upon annealing, which is nearly independent of the annealing environment. The native defects specific to the as-grown films, which were analyzed via PL, are assigned to Zni related centers that luminesce at 2.8 eV. Their presence is attributed to the nature of the sputtering growth technique, which supports Zn-rich growth conditions. After annealing, in either environment the 2.8 eV center diminished accompanied by morphology improvement, and the desirable UV-PL significantly increased. The O2 ambient was found to introduce nominal Oi centers while the Ar ambient was found to be the ideal environment for the enhancement of the UV-light emission: an enhancement of ∼40 times was achieved. The increase in the UV-PL is attributed to the reduction of Zni-related defects, the presence of which in ZnO provides a competing route to the UV emission. Also, the effect of the annealing was to decrease the compressive stress in the films. Finally, the dominant UV-PL at the cold temperature regime is attributed to luminescent centers not associated with the usual excitons of ZnO, but rather to structural defects

ZnO and MgZnO Nanocrystalline Flexible Films: Optical and Material Properties

An emerging material for flexible UV applications is MgxZn1−xO which is capable of tunable bandgap and luminescence in the UV range of ~3.4 eV–7.4 eV depending on the composition x. Studies on the optical and material characteristics of ZnO and Mg0.3Zn0.7O nanocrystalline flexible films are presented. The analysis indicates that the ZnO and Mg0.3Zn0.7O have bandgaps of 3.34 eV and 4.02 eV, respectively. The photoluminescence (PL) of the ZnO film was found to exhibit a structural defect-related emission at ~3.316 eV inherent to the nanocrystalline morphology. The PL of the Mg0.3Zn0.7O film exhibits two broad peaks at 3.38 eV and at 3.95 eV that are discussed in terms of the solubility limit of the ZnO-MgO alloy system. Additionally, external deformation of the film did not have a significant impact on its properties as indicated by the Raman LO-mode behavior, making these films attractive for UV flexible applications

Optical Properties of ZnO-Alloyed Nanocrystalline Films

ZnO is emerging as one of the materials of choice for UV applications. It has a deep excitonic energy level and a direct bandgap of ~3.4 eV. Alloying ZnO with certain atomic constituents adds new optical and electronic functionalities to ZnO. This paper presents research on MgxZn1−xO and ZnS1−xOx nanocrystalline flexible films, which enable tunable optical properties in the deep-UV and in the visible range. The ZnO and Mg0.3Zn0.7O films were found to have bandgaps at 3.35 and 4.02 eV, respectively. The photoluminescence of the Mg0.3Zn0.7O exhibited a bandedge emission at 3.95 eV, and at lower energy 3.38 eV due to the limited solubility inherent to these alloys. ZnS0.76O0.24 and ZnS0.16O0.84 were found to have bandgaps at 3.21 and 2.65 eV, respectively. The effect of nitrogen doping on ZnS0.16O0.84 is discussed in terms of the highly lattice mismatched nature of these alloys and the resulting valence-band modification

Thermal and Optical Activation Mechanisms of Nanospring-Based Chemiresistors

Chemiresistors (conductometric sensor) were fabricated on the basis of novel nanomaterials—silica nanosprings ALD coated with ZnO. The effects of high temperature and UV illumination on the electronic and gas sensing properties of chemiresistors are reported. For the thermally activated chemiresistors, a discrimination mechanism was developed and an integrated sensor-array for simultaneous real-time resistance scans was built. The integrated sensor response was tested using linear discriminant analysis (LDA). The distinguished electronic signatures of various chemical vapors were obtained at ppm level. It was found that the recovery rate at high temperature drastically increases upon UV illumination. The feasibility study of the activation method by UV illumination at room temperature was conducted