Design, Fabrication and Characterization of GaN HEMTs for Power Switching Applications

The unique properties of the III-nitride heterostructure, consisting of gallium nitride (GaN), aluminium nitride (AlN) and their ternary compounds (e.g. AlGaN, InAlN), allow for the fabrication of high electron mobility transistors (HEMTs). These devices exhibit high breakdown fields, high electron mobilities and small parasitic capacitances, making them suitable for wireless communication and power electronic applications. In this work, GaN-based power switching HEMTs and low voltage, short-channel HEMTs were designed, fabricated, and characterized.In the first part of the thesis, AlGaN/GaN-on-SiC high voltage metal-insulator-semiconductor (MIS)HEMTs fabricated on a novel ‘buffer-free’ heterostructure are presented. This heterostructure effectively suppresses buffer-related trapping effects while maintaining high electron confinement and low leakage currents, making it a viable material for high voltage, power electronic HEMTs. This part of the thesis covers device processing techniques to minimize leakage currents and maximize breakdown voltages in these ‘buffer-free’ MISHEMTs. Additionally, a recess-etched, Ta-based, ohmic contact process was utilized to form low-resistive ohmic contacts with contact resistances of 0.44-0.47 Ω∙mm. High voltage operation can be achieved by employing a temperature-stable nitrogen implantation isolation process, which results in three-terminal breakdown fields of 98-123 V/μm. By contrast, mesa isolation techniques exhibit breakdown fields below 85 V/μm and higher off-state leakage currents. Stoichiometric low-pressure chemical vapor deposition (LPCVD) SiNx passivation layers suppress gate currents through the AlGaN barrier below 10 nA/mm over 1000 V, which is more than two orders of magnitude lower compared to Si-rich SiNx passivation layers. A 10% dynamic on-resistance increase at 240 V was measured in HEMTs with stoichiometric SiNx passivation, which is likely caused by slow traps with time constants over 100 ms. SiNx gate dielectrics display better electrical isolation at high voltages compared to HfO2 and Ta2O5. However, the two gate oxides exhibit threshold voltages (Vth) above -2 V, making them a promising alternative for the fabrication of recess-etched normally-off MISHEMTs.Reducing the gate length (Lg) to minimize losses and increase the operating frequency in GaN HEMTs also entails more severe short-channel effects (SCEs), limiting gain, output power and the maximum off-state voltage. In the second part of the thesis, SCEs were studied in short-channel GaN HEMTs using a drain-current injection technique (DCIT). The proposed method allows Vth to be obtained for a wide range of drain-source voltages (Vds) in one measurement, which then can be used to calculate the drain-induced barrier lowering (DIBL) as a rate-of-change of Vth with respect to Vds. The method was validated using HEMTs with a Fe-doped GaN buffer layer and a C-doped AlGaN back-barrier with thin channel layers. Supporting technology computer-aided design (TCAD) simulations indicate that the large increase in DIBL is caused by buffer leakage. This method could be utilized to optimize buffer design and gate lengths to minimize on-state losses and buffer leakage currents in power switching HEMTs

Investigation of Isolation Approaches and the Stoichiometry of SiNx Passivation Layers in “Buffer-Free” AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors

Critical process modules for the fabrication of metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) based on a novel ‘buffer-free’ AlGaN/GaN heterostructure grown with metal–organic chemical vapor deposition (MOCVD) are presented. The methods of isolation and passivation for this type of heterostructure are investigated. Utilizing nitrogen implantation, it is possible to achieve off-state destructive breakdown voltages (BVs) of 2496 V for gate–drain distances up to 25 μm, whereas mesa isolation techniques limit the BV below 1284 V. The stoichiometry of the SiNx passivation layer displays a small impact on the static and dynamic on-resistance. However, MISHEMTs with Si-rich passivation show off-state gate currents in the range of 1–100 μA mm−1 at voltages above 1000 V, which is reduced below 10 nA mm−1 using a stoichiometric SiNx passivation layer. Destructive BVs of 1532 and 1742 V can be achieved using gate-integrated and source-connected field plates for MIHEMTs with stoichiometric and Si–rich passivation layers, respectively. By decreasing the field plate lengths, it is possible to achieve BVs of 2200 V. This demonstrates the implementation of MISHEMTs with high-voltage operation and low leakage currents on a novel “buffer-free” heterostructure by optimizing the SiNx stoichiometry

AlGaN/GaN/AlN \u27Buffer-Free\u27 High Voltage MISHEMTs with Si-rich and Stoichiometric SiNxFirst Passivation

Buffer-free\u27 AlGaN/GaN/AlN high electron mobility transistors (HEMTs) with a thin GaN channel layer and a thin AlN nucleation layer grown on a semi-insulating SiC substrate are presented. Si-rich and a stoichiometric low-pressure chemical vapor deposition (LPCVD) SiNx first passivation were employed to study the impact of stoichiometry on off-state leakage currents in GaN-based metal-insulator-semiconductor (MIS)HEMTs. Nitrogen implantation isolation, SiOx second passivation, gate and source field plates were utilized. Off-state drain leakage current was reduced 2-3 orders of magnitude by depositing a stoichiometric instead of a Si-rich SiNx passivation. The gate leakage current was suppressed below 10nA/mm until breakdown. A destructive breakdown voltage of 1742V and 1532V was measured for the MISHEMTs with Si-rich and stoichiometric SiNx passivation, respectively. This demonstrates how high voltage, low leakage MISHEMTs can be achieved using a \u27buffer-free\u27 heterostructure by optimizing the first passivation stoichiometry

High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a ‘Buffer-Free’ Heterostructure

The performance of a novel ‘buffer-free’ Al-GaN/GaN-on-SiC MISHEMTs for power switching applications is demonstrated in this letter. High voltage operation with exceptionally low gate and drain leakage currents is shown. A specific on-resistance of 3.61 mΩ∙cm2 and an abrupt breakdown voltage of 1622 V at a drain current of 22 nA/mm is achieved. Using two-terminal breakdown measurements, nitrogen-implanted GaN display breakdown fields of 0.96 MV/cm. The semi-insulating SiC substrate is capable of suppressing vertical leakage currents, ensuring that off-state operation is limited by lateral breakdown. The impact of electron trapping effects on dynamic on-resistance is small up to a drain quiescent voltage of at least 240 V. Drain current transient characteristics display a 14% increase in dynamic on-resistance with respect to quiescent drain bias, and a negligible change in resistance up to 100 ms. These types of ‘buffer-free’ heterostructures are of interest for power electronic applications above 1000 V and with potential for co-integration of power and RF-electronics

Identification of genes predominantly expressed in human macrophages

Identification of cell and tissue specific genes may provide novel insights to signaling systems and functions. Macrophages play a key role in many diseases including atherosclerosis. Using DNA microarrays we compared the expression of approximately 10,000 genes in 56 human tissues and identified 23 genes with predominant expression in macrophages. The identified genes include both genes known to be macrophage specific and genes previously not well described in this cell type. Tissue distribution of two genes, liver X receptor (LXR) alpha and interleukin-1 receptor antagonist (IL1RN), was verified by real-time RT-PCR. We conclude that comparison of expression profiles from a large number of tissues can be used to identify genes that are predominantly expressed in certain tissues. Identification of novel macrophage specific genes may increase our understanding of the role of this cell in different diseases

Improving directional stability control in a heavy truck by combining braking and steering action

The introduction of electronics in heavy vehicle steering systems has enabled active steering torque support. As steering is an effective way of escaping directional instability and brakes are fast and decoupled from the driver a combination of controlled steering and braking would be beneficial when performing directional stability control. A method is therefore proposed for this, based on control allocation. The method is unique in that it uses combined quadratic lateral and longitudinal tyre constraints computed in real-time, which has the potential of producing a higher corrective yaw moment than the commonly used approach with linear constraints, and that it can be adapted to any heavy vehicle combination. The method has been tested and compared to a standard stability control system in three different manoeuvres using a heavy solo tractor unit on a frozen lake. The measured deviation from the intended path was observed to reduce up to several meters with the new method. Also driver rating improved

Improving directional stability control in a heavy truck by combining braking and steering action

The introduction of electronics in heavy vehicle steering systems has enabled active steering torque support. As steering is an effective way of escaping directional instability and brakes are fast and decoupled from the driver a combination of controlled steering and braking would be beneficial when performing directional stability control. A method is therefore proposed for this, based on control allocation. The method is unique in that it uses combined quadratic lateral and longitudinal tyre constraints computed in real-time, which has the potential of producing a higher corrective yaw moment than the commonly used approach with linear constraints, and that it can be adapted to any heavy vehicle combination. The method has been tested and compared to a standard stability control system in three different manoeuvres using a heavy solo tractor unit on a frozen lake. The measured deviation from the intended path was observed to reduce up to several meters with the new method. Also driver rating improved

Oxidized LDL induces a coordinated up-regulation of the glutathione and thioredoxin systems in human macrophages.

Using DNA microarray analysis, we found that human macrophages respond to oxidized low-density lipoprotein (oxLDL) by activating the antioxidative glutathione and thioredoxin systems. Several genes of the glutathione and thioredoxin systems were expressed at high levels in macrophages when compared to 80 other human tissues and cell types, indicating that these systems may be of particular importance in macrophages. The up-regulation of three genes in these systems, thioredoxin (

Augmented levels of CD44 in macrophages from atherosclerotic subjects: a possible IL-6-CD44 feedback loop?

The cell-adhesion molecule CD44 likely participates in atherosclerosis development. We have shown previously that pro-inflammatory cytokines affect CD44 expression. Therefore, this work examined the role of elevated CD44 levels in human macrophages. Macrophages from human atherosclerotic subjects (n=15) showed elevated levels of CD44 transcript and protein (1.5-fold) compared to matched controls (n=15) (P=0.050 and 0.044, respectively). To test whether genetic factors influence CD44 expression, two single nucleotide polymorphisms in the CD44 gene were analyzed but these were not associated with coronary artery disease. We also examined the potential connection between plasma cytokine levels and CD44 expression. In atherosclerotic subjects, elevated CD44 expression correlates (P=0.012) with enhanced macrophage IL-6 secretion (3.13+/-2.5 pg/mL versus 0.32+/-0.16 pg/mL in controls, P=0.021). Additionally, CD44-deficient mice exhibit less circulating IL-6 than wild-type controls (9.8+/-0.7 pg/mL versus 14.3+/-0.7 pg/mL; P=0.032). Furthermore, IL-6 augments CD44 expression in primary human macrophages after 24 h (P=0.038) and 48 h (P=0.015). Taken together, our data show an IL-6-CD44 feedback loop in macrophages. Such a positive feedback loop may aggravate atherosclerosis development

Perilipin 5 is protective in the ischemic heart

Background: Myocardial ischemia is associated with alterations in cardiac metabolism, resulting in decreased fatty acid oxidation and increased lipid accumulation. Here we investigate how myocardial lipid content and dynamics affect the function of the ischemic heart, and focus on the role of the lipid droplet protein perilipin 5 (Plin5) in the pathophysiology of myocardial ischemia. Methods and results: We generated Plin5(-/-) mice and found that Plin5 deficiency dramatically reduced the triglyceride content in the heart. Under normal conditions, Plin5(-/-) mice maintained a close to normal heart function by decreasing fatty acid uptake and increasing glucose uptake, thus preserving the energy balance. However, during stress or myocardial ischemia, Plin5 deficiency resulted in myocardial reduced substrate availability, severely reduced heart function and increased mortality. Importantly, analysis of a human cohort with suspected coronary artery disease showed that a common noncoding polymorphism, rs884164, decreases the cardiac expression of PLIN5 and is associated with reduced heart function following myocardial ischemia, indicating a role for Plin5 in cardiac dysfunction. Conclusion: Our findings indicate that Plin5 deficiency alters cardiac lipid metabolism and associates with reduced survival following myocardial ischemia, suggesting that Plin5 plays a beneficial role in the heart following ischemia. (C) 2016 The Authors. Published by Elsevier Ireland Ltd