Major impediments to a feasibility study in the case of Smith Bay development

Master's Project (M.S.) University of Alaska Fairbanks, 2017The State of Alaska is one of the energy-producing states which rely on revenue from energy extraction, but faces several challenges, especially significant fluctuations in revenue generated by taxes. In the past, oil production from established oil fields on state land yielded sufficient tax revenue. For new sources of oil, oil company owners must make a decision about developing the prospects based on a feasibility study which produces preliminary design, cost estimates, project schedule, including many permits and other uncertainties, financing, and tax credits. When this study is done, the decision can be made to begin development. This paper considers the feasibility studies on main obstacles in the development path of Smith Bay. The evaluation of major tasks needed for a feasibility study, uncertainty and obstacles, combined with our estimation of the time period required for the oil fields to produce oil, led to an estimate of the time before tax money will be provided to the state

Growth-rate induced epitaxial orientation of CeO2 on Al2O3(0001)

High-quality CeO2 films were grown on Al2O3(0001) substrates using oxygen plasma-assisted molecular beam epitaxy. The epitaxial orientation of the films is found to be CeO2(100) and CeO2(111) at low ( \u3c 8 A/min) and higher growth rates ( \u3e 12 A/min), respectively. CeO2(100) film grows as three-dimensional islands, while CeO2(111) film grows as two-dimensional layers. The CeO2(100) film exhibits better epitaxial quality compared to CeO2(111) film. However, the CeO2(100) film on Al2O3(0001) shows three in-plane domains at 30 degrees to each other. While the epitaxial quality is attributed to the close match between oxygen sublattices of CeO2(100) and Al2O3(0001), the three in-plane domains in CeO2(100) are attributed to the threefold symmetry of the substrate. The relative stability of different epitaxial orientations of CeO2 films on Al2O3(0001) obtained from molecular dynamics simulations strongly supports the experimental observations

Ultra violet sensors based on nanostructured ZnO spheres in network of nanowires: a novel approach

The ZnO nanostructures consisting of micro spheres in a network of nano wires were synthesized by direct vapor phase method. X-ray Photoelectron Spectroscopy measurements were carried out to understand the chemical nature of the sample. ZnO nanostructures exhibited band edge luminescence at 383 nm. The nanostructure based ZnO thin films were used to fabricate UV sensors. The photoresponse measurements were carried out and the responsivity was measured to be 50 mA W−1. The rise and decay time measurements were also measured

Persistent Photoconductivity Studies in Nanostructured ZnO UV Sensors

The phenomenon of persistent photoconductivity is elusive and has not been addressed to an extent to attract attention both in micro and nanoscale devices due to unavailability of clear material systems and device configurations capable of providing comprehensive information. In this work, we have employed a nanostructured (nanowire diameter 30–65 nm and 5 μm in length) ZnO-based metal–semiconductor–metal photoconductor device in order to study the origin of persistent photoconductivity. The current–voltage measurements were carried with and without UV illumination under different oxygen levels. The photoresponse measurements indicated a persistent conductivity trend for depleted oxygen conditions. The persistent conductivity phenomenon is explained on the theoretical model that proposes the change of a neutral anion vacancy to a charged state

ZnO-Based Ultraviolet Photodetectors

Ultraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a wide range of civil and military applications. Because of its wide band gap, low cost, strong radiation hardness and high chemical stability, ZnO are regarded as one of the most promising candidates for UV photodetectors. Additionally, doping in ZnO with Mg elements can adjust the bandgap largely and make it feasible to prepare UV photodetectors with different cut-off wavelengths. ZnO-based photoconductors, Schottky photodiodes, metal–semiconductor–metal photodiodes and p–n junction photodetectors have been developed. In this work, it mainly focuses on the ZnO and ZnMgO films photodetectors. We analyze the performance of ZnO-based photodetectors, discussing recent achievements, and comparing the characteristics of the various photodetector structures developed to date

Solution Grown Se/Te Nanowires: Nucleation, Evolution, and The Role of Triganol Te seeds

We have studied the nucleation and growth of Se–Te nanowires (NWs), with different morphologies, grown by a chemical solution process. Through systematic characterization of the Se–Te NW morphology as a function of the Te nanocrystallines (NCs) precursor, the relative ratio between Se and Te, and the growth time, a number of significant insights into Se–Te NW growth by chemical solution processes have been developed. Specifically, we have found that: (i) the growth of Se–Te NWs can be initiated from either long or short triganol Te nanorods, (ii) the frequency of proximal interactions between nanorod tips and the competition between Se and Te at the end of short Te nanorods results in V-shaped structures of Se–Te NWs, the ratio between Se and Te having great effect on the morphology of Se–Te NWs, (iii) by using long Te nanorods as seeds, Se–Te NWs with straight morphology were obtained. Many of these findings on Se–Te NW growth can be further generalized and provide very useful information for the rational synthesis of group VI based semiconductor NW compounds

Effect of ZnCdTe-Alloyed Nanocrystals on Polymer–Fullerene Bulk Heterojunction Solar Cells

The photovoltaic properties of solar cell based on the blends of poly[2-methoxy-5-(2-ethylhexoxy-1,4-phenylenevinylene) (MEH-PPV), fullerene (C60), and ZnCdTe-alloyed nanocrystals were investigated. Comparing the spectral response of photocurrent of the MEH-PPV:C60(+ZnCdTe) nanocomposite device with that of the devices based on MEH-PPV:C60and pristine MEH-PPV, one can find that the nanocomposite device exhibits an enhanced photocurrent. In comparing the composite devices with different ZnCdTe:[MEH-PPV + C60] weight ratios of 10 wt% (D1–1), 20 wt% (D1–2), 40 wt% (D1–3), and 70 wt% (D1–4), it was found that the device D1–3exhibits the best performance. The power conversion efficiency (η) is improved doubly compared with that of the MEH-PPV:C60device

Enhanced UV photosensitivity from rapid thermal annealed vertically aligned ZnO nanowires

We report on the major improvement in UV photosensitivity and faster photoresponse from vertically aligned ZnO nanowires (NWs) by means of rapid thermal annealing (RTA). The ZnO NWs were grown by vapor-liquid-solid method and subsequently RTA treated at 700°C and 800°C for 120 s. The UV photosensitivity (photo-to-dark current ratio) is 4.5 × 103 for the as-grown NWs and after RTA treatment it is enhanced by a factor of five. The photocurrent (PC) spectra of the as-grown and RTA-treated NWs show a strong peak in the UV region and two other relatively weak peaks in the visible region. The photoresponse measurement shows a bi-exponential growth and bi-exponential decay of the PC from as-grown as well as RTA-treated ZnO NWs. The growth and decay time constants are reduced after the RTA treatment indicating a faster photoresponse. The dark current-voltage characteristics clearly show the presence of surface defects-related trap centers on the as-grown ZnO NWs and after RTA treatment it is significantly reduced. The RTA processing diminishes the surface defect-related trap centers and modifies the surface of the ZnO NWs, resulting in enhanced PC and faster photoresponse. These results demonstrated the effectiveness of RTA processing for achieving improved photosensitivity of ZnO NWs

Low Temperature Growth of In2O3and InN Nanocrystals on Si(111) via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in In

Indium oxide (In2O3) nanocrystals (NCs) have been obtained via atmospheric pressure, chemical vapour deposition (APCVD) on Si(111) via the direct oxidation of In with Ar:10% O2at 1000 °C but also at temperatures as low as 500 °C by the sublimation of ammonium chloride (NH4Cl) which is incorporated into the In under a gas flow of nitrogen (N2). Similarly InN NCs have also been obtained using sublimation of NH4Cl in a gas flow of NH3. During oxidation of In under a flow of O2the transfer of In into the gas stream is inhibited by the formation of In2O3around the In powder which breaks up only at high temperatures, i.e.T > 900 °C, thereby releasing In into the gas stream which can then react with O2leading to a high yield formation of isolated 500 nm In2O3octahedrons but also chains of these nanostructures. No such NCs were obtained by direct oxidation forTG < 900 °C. The incorporation of NH4Cl in the In leads to the sublimation of NH4Cl into NH3and HCl at around 338 °C which in turn produces an efficient dispersion and transfer of the whole In into the gas stream of N2where it reacts with HCl forming primarily InCl. The latter adsorbs onto the Si(111) where it reacts with H2O and O2leading to the formation of In2O3nanopyramids on Si(111). The rest of the InCl is carried downstream, where it solidifies at lower temperatures, and rapidly breaks down into metallic In upon exposure to H2O in the air. Upon carrying out the reaction of In with NH4Cl at 600 °C under NH3as opposed to N2, we obtain InN nanoparticles on Si(111) with an average diameter of 300 nm