1 research outputs found
Uncovering the Role of Crystal Phase in Determining Nonvolatile Flash Memory Device Performance Fabricated from MoTe<sub>2</sub>‑Based 2D van der Waals Heterostructures
Although the crystal phase of two-dimensional (2D) transition
metal
dichalcogenides (TMDs) has been proven to play an essential role in
fabricating high-performance electronic devices in the past decade,
its effect on the performance of 2D material-based flash memory devices
still remains unclear. Here, we report the exploration of the effect
of MoTe2 in different phases as the charge-trapping layer
on the performance of 2D van der Waals (vdW) heterostructure-based
flash memory devices, where a metallic 1T′-MoTe2 or semiconducting 2H-MoTe2 nanoflake is used as the floating
gate. By conducting comprehensive measurements on the two kinds of
vdW heterostructure-based devices, the memory device based on MoS2/h-BN/1T′-MoTe2 presents much better performance,
including a larger memory window, faster switching speed (100 ns),
and higher extinction ratio (107), than that of the device
based on the MoS2/h-BN/2H-MoTe2 heterostructure.
Moreover, the device based on the MoS2/h-BN/1T′-MoTe2 heterostructure also shows a long cycle (>1200 cycles)
and
retention (>3000 s) stability. Our study clearly demonstrates that
the crystal phase of 2D TMDs has a significant impact on the performance
of nonvolatile flash memory devices based on 2D vdW heterostructures,
which paves the way for the fabrication of future high-performance
memory devices based on 2D materials