13 research outputs found
Controlled Preparation of High Quality Bubble-Free and Uniform Conducting Interfaces of Vertical van der Waals Heterostructures of Arrays
Sharp and clean interfaces of van der Waals (vdW) heterostructures
are highly demanded in two-dimensional (2D) materials-based devices.
However, current assembly methods usually cause interfacial bubbles
and wrinkles, hindering carrier interlayer transport. The preparation
of a large-scale vdW heterostructure with a bubble-free interface
is still a challenge. Although many efforts have been made to eliminate
bubbles, the evolution processes of the interfacial bubbles are rarely
studied. Here, the interface bubble formation and evolution of the
transferred 2D materials and their vdW heterostructure are systemically
studied by the atomic force microscopy (AFM) technique and high-resolution
surface current mapping. A thermal annealing procedure is developed
to reduce the number of bubbles and to improve the quality of interfaces.
In addition, influences of the interface residues and nanosteps on
bubble evolution are also discussed. Further, we develop the polystyrene
(PS)-mediated polydimethylÂsiloxane (PDMS) transfer technique
to realize the high-quality transfer of heterostructure arrays. Finally,
high-resolution surface current mapping results confirm that we can
now produce highly uniform electrical conduction interfaces of heterojunctions.
This study provides guidance for assembling high quality interfaces
and paves the way for production of bubble-free heterostructure-based
electronic devices with high performance and good uniformity
Flexible, Transparent, and Free-Standing Silicon Nanowire SERS Platform for in Situ Food Inspection
We
demonstrated a flexible transparent and free-standing Si nanowire
paper (SiNWP) as a surface enhanced Raman scattering (SERS) platform
for in situ chemical sensing on warping surfaces with high sensitivity.
The SERS activity has originated from the three-dimension interconnected
nanowire network structure and electromagnetic coupling between closely
separated nanowires in the SiNWP. In addition, the SERS activity can
be highly improved by functionalizing the SiNWP with plasmonic Au
nanoparticles. The hybrid substrate not only showed excellent reproducibility
and stability of the SERS signal, but also maintained the flexibility
and transparency of the pristine SiNWP. To demonstrate its potential
application in food inspection, the Au nanoparticles-modified SiNWP
was directly wrapped onto the lemon surface for in situ identification
and detection of the pesticide residues. The results showed that the
excellent SERS activity and transparency of the hybrid substrate enabled
the detection of the pesticides down to 72 ng/cm<sup>2</sup>, which
was much lower than the permitted residue dose in food safety
Plasmon-Controlled FoĚrster Resonance Energy Transfer
The localized plasmons of metal nanocrystals have been
widely utilized
to control a variety of optical signals, such as Raman, fluorescence,
and circular dichroism, from proximal dye molecules. We show, on the
single-particle level, that the FoĚrster resonance energy transfer
between two different fluorophores can be modulated by adjacent plasmonic
nanocrystals. The donor and acceptor fluorophore molecules are embedded
in a mesostructured silica shell that is uniformly coated on AuâAg
coreâshell nanocrystals. The longitudinal plasmon wavelengths
of the coreâshell metal nanocrystals are synthetically tailored
by varying the aspect ratio. Comparison of the scattering and fluorescence
spectra taken from the different hybrid nanostructures indicates that
the energy transfer efficiency can be controlled by the plasmon wavelength.
When the plasmon peak overlaps with the emission peak of the donor,
the energy transfer channel is turned off. When the plasmon peak is
red-shifted to be in between the emission peak of the donor and the
absorption peak of the acceptor or right at the intrinsic emission
peak of the acceptor, the energy transfer channel is turned on
Distinct Plasmonic Manifestation on Gold Nanorods Induced by the Spatial Perturbation of Small Gold Nanospheres
The plasmon coupling between a Au nanorod and a small
Au nanosphere
has been studied with scattering measurements, electrodynamic simulations,
and model analysis. The spatial perturbation of the nanosphere leads
to distinct spectral changes of the heterodimer. The plasmonic responses,
including Fano resonance, are remarkably sensitive to the nanosphere
position on the nanorod, the gap distance, and the nanocrystal dimensions.
The nanosphere dipole is intriguingly found to rotate around the nanorod
dipole to achieve favorable attractive interaction for the bonding
dipoleâdipole mode. The sensitive spectral response of the
heterodimer to the spatial perturbation of the nanosphere offers an
approach to designing plasmon rulers of two spatial coordinates for
sensing and high-resolution measurements of distance changes
Directional Fano Resonance in a Silicon Nanosphere Dimer
Fano resonance arising from the interaction between a broad âbrightâ mode and a narrow âdarkâ mode has been widely investigated in symmetry-breaking structures made of noble metals such as plasmonic asymmetric oligomers or other well-designed nanostructures. However, Fano resonance in nanoscale all-dielectric dimers has not been experimentally demonstrated so far. We report the first experimental observation of directional Fano resonance in silicon nanosphere dimers (both homodimer and heterodimer) and clarify that the coupling between magnetic and electric dipole modes can easily generate Fano resonance in all-dielectric oligomers, distinctly differing from conventional Fano resonances based on electric responses or artificial optical magnetism. A silicon nanosphere dimer, exhibiting a strong magnetic response inside and an electric enhancement in the gap, is an excellent structure to support magnetic-based Fano scattering. Interactions between magnetic and electric dipoles can suppress backward scattering and enhance forward scattering at Fano wavelengths. This directional scattering is much more prominent than that from a single silicon sphere and shows promising applications in areas such as directional nanoantenna or optical switching, opening up avenues for developing all-dielectric low-loss metamaterials or nanophotonic devices at visible wavelengths
Centimeter-Scale CVD Growth of Highly Crystalline Single-Layer MoS<sub>2</sub> Film with Spatial Homogeneity and the Visualization of Grain Boundaries
MoS<sub>2</sub> monolayer attracts considerable attention due to its semiconducting
nature with a direct bandgap which can be tuned by various approaches.
Yet a controllable and low-cost method to produce large-scale, high-quality,
and uniform MoS<sub>2</sub> monolayer continuous film, which is of
crucial importance for practical applications and optical measurements,
remains a great challenge. Most previously reported MoS<sub>2</sub> monolayer films had limited crystalline sizes, and the high density
of grain boundaries inside the films greatly affected the electrical
properties. Herein, we demonstrate that highly crystalline MoS<sub>2</sub> monolayer film with spatial size up to centimeters can be
obtained via a facile chemical vapor deposition method with solid-phase
precursors. This growth strategy contains selected precursor and controlled
diffusion rate, giving rise to the high quality of the film. The well-defined
grain boundaries inside the continuous film, which are invisible under
an optical microscope, can be clearly detected in photoluminescence
mapping and atomic force microscope phase images, with a low density
of âź0.04 Îźm<sup>â1</sup>. Transmission electron
microscopy combined with selected area electron diffraction measurements
further confirm the high structural homogeneity of the MoS<sub>2</sub> monolayer film with large crystalline sizes. Electrical measurements
show uniform and promising performance of the transistors made from
the MoS<sub>2</sub> monolayer film. The carrier mobility remains high
at large channel lengths. This work opens a new pathway toward electronic
and optical applications, and fundamental growth mechanism as well,
of the MoS<sub>2</sub> monolayer
Janus MagnetoâElectric Nanosphere Dimers Exhibiting Unidirectional Visible Light Scattering and Strong Electromagnetic Field Enhancement
Steering incident light into specific directions at the nanoscale is very important for future nanophotonics applications of signal transmission and detection. A prerequisite for such a purpose is the development of nanostructures with high-efficiency unidirectional light scattering properties. Here, from both theoretical and experimental sides, we conceived and demonstrated the unidirectional visible light scattering behaviors of a heterostructure, Janus dimer composed of gold and silicon nanospheres. By carefully adjusting the sizes and spacings of the two nanospheres, the Janus dimer can support both electric and magnetic dipole modes with spectral overlaps and comparable strengths. The interference of these two modes gives rise to the narrow-band unidirectional scattering behaviors with enhanced forward scattering and suppressed backward scattering. The directionality can further be improved by arranging the dimers into one-dimensional chain structures. In addition, the dimers also show remarkable electromagnetic field enhancements. These results will be important not only for applications of light emitting devices, solar cells, optical filters, and various surface enhanced spectroscopies but also for furthering our understanding on the lightâmatter interactions at the nanoscale
Electronic Properties of MoS<sub>2</sub>âWS<sub>2</sub> Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy
Formation of heterojunctions of transition metal dichalcogenides (TMDs) stimulates wide interest in new device physics and technology by tuning optical and electronic properties of TMDs. TMDs heterojunctions are of scientific and technological interest for exploration of next generation flexible electronics. Herein, we report on a two-step epitaxial ambient-pressure CVD technique to construct in-plane MoS<sub>2</sub>âWS<sub>2</sub> heterostructures. The technique has the potential to artificially control the shape and structure of heterostructures or even to be more potentially extendable to growth of TMD superlattice than that of one-step CVD technique. Moreover, the unique MX<sub>2</sub> heterostructure with monolayer MoS<sub>2</sub> core wrapped by multilayer WS<sub>2</sub> is obtained by the technique, which is entirely different from MX<sub>2</sub> heterostructures synthesized by existing one-step CVD technique. Transmission electron microscopy, Raman and photoluminescence mapping studies reveal that the obtained heterostructure nanosheets clearly exhibit the modulated structural and optical properties. Electrical transport studies demonstrate that the special MoS<sub>2</sub> (monolayer)/WS<sub>2</sub> (multilayer) heterojunctions serve as intrinsic lateral pân diodes and unambiguously show the photovoltaic effect. On the basis of this special heterostructure, depletion-layer width and built-in potential, as well as the built-in electric field distribution, are obtained by KPFM measurement, which are the essential parameters for TMD optoelectronic devices. With further development in future studies, this growth approach is envisaged to bring about a new growth platform for two-dimensional atomic crystals and to create unprecedented architectures therefor
1TⲠTransition Metal Telluride Atomic Layers for Plasmon-Free SERS at Femtomolar Levels
Plasmon-free surface enhanced Raman
scattering (SERS) based on
the chemical mechanism (CM) is drawing great attention due to its
capability for controllable molecular detection. However, in comparison
to the conventional noble-metal-based SERS technique driven by plasmonic
electromagnetic mechanism (EM), the low sensitivity in the CM-based
SERS is the dominant barrier toward its practical applications. Herein,
we demonstrate the 1TⲠtransition metal telluride atomic layers
(WTe<sub>2</sub> and MoTe<sub>2</sub>) as ultrasensitive platforms
for CM-based SERS. The SERS sensitivities of analyte dyes on 1Tâ˛-WÂ(Mo)ÂTe<sub>2</sub> reach EM-comparable ones and become even greater when it
is integrated with a Bragg reflector. In addition, the dye fluorescence
signals are efficiently quenched, making the SERS spectra more distinguishable.
As a proof of concept, the SERS signals of analyte Rhodamine 6G (R6G)
are detectable even with an ultralow concentration of 40 (400) fM
on pristine 1Tâ˛-WÂ(Mo)ÂTe<sub>2</sub>, and the corresponding
Raman enhancement factor (EF) reaches 1.8 Ă 10<sup>9</sup> (1.6
Ă 10<sup>8</sup>). The limit concentration of detection and the
EF of R6G can be further enhanced into 4 (40) fM and 4.4 Ă 10<sup>10</sup> (6.2 Ă 10<sup>9</sup>), respectively, when 1Tâ˛-WÂ(Mo)ÂTe<sub>2</sub> is integrated on the Bragg reflector. The strong interaction
between the analyte and 1Tâ˛-WÂ(Mo)ÂTe<sub>2</sub> and the abundant
density of states near the Fermi level of the semimetal 1Tâ˛-WÂ(Mo)ÂTe<sub>2</sub> in combination gives rise to the promising SERS effects by
promoting the charge transfer resonance in the analyte-telluride complex
Characteristics of a Silicon Nanowires/PEDOT:PSS Heterojunction and Its Effect on the Solar Cell Performance
The interfacial energy-level alignment
of a silicon nanowires (SiNWs)/PEDOT:PSS heterojunction is investigated
using Kelvin probe force microscopy. The potential difference and
electrical distribution in the junction are systematically revealed.
When the PEDOT:PSS layer is covered at the bottom of the SiNW array,
an abrupt junction is formed at the interface whose characteristics
are mainly determined by the uniformly doped Si bulk. When the PEDOT:PSS
layer is covered on the top, a hyperabrupt junction localized at the
top of the SiNWs forms, and this characteristic depends on the surface
properties of the SiNWs. Because the calculation shows that the absorption
of light from the SiNWs and the Si bulk are equally important, the
bottom-coverage structure leads to better position matching between
the depletion and absorption area and therefore shows better photovoltaic
performance. The dependence of <i>J</i><sub>SC</sub> and <i>V</i><sub>OC</sub> on the junction characteristic is discussed