50 research outputs found

    Fully Photonic Integrated Wearable Optical Interrogator

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    Wearable technology constitutes a pioneering and leading innovation and a market development platform worldwide for technologies worn close to the body. Wearable optical fiber sensors have the most value for advanced multiparameter sensing in digital health monitoring systems. We demonstrated the first example of a fully integrated optical interrogator. By integrating all the optical components on a silicon photonic chip, we realized a stable, miniaturized and low-cost optical interrogator for the continuous, dynamic, and long-term acquisition of human physiological signals. The interrogator was integrated in a wristband, enabling the detection of body temperature and heart sounds. Our study paves the way for the development of watch-sized integrated wearable optical interrogators with potential applications in health monitoring and can be directly exploited for the customized design of ultraminiaturized optical interrogator systems.H.L. acknowledges the support from the Tianjin Talent Special Support Program. J.D.P.G. acknowledges the support from the Serra Hunter Program, the ICREA Academia Program, and the Tianjin Distinguished University Professor Program. This work was supported by the National Natural Science Foundation of China (no. 61675154), the Tianjin Key Research and Development Program (no. 19YFZCSY00180), the Tianjin Major Project for Civil-Military Integration of Science and Technology (no. 18ZXJMTG00260), the Tianjin Science and Technology Program (no. 20YDTPJC01380), and the Tianjin Municipal Special Foundation for Key Cultivation of China (no. XB202007)

    100 Gb/s Silicon Photonic WDM Transmitter with Misalignment-Tolerant Surface-Normal Optical Interfaces

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    A 4 × 25 Gb/s ultrawide misalignment tolerance wavelength-division-multiplex (WDM) transmitter based on novel bidirectional vertical grating coupler has been demonstrated on complementary metal-oxide-semiconductor (CMOS)-compatible silicon-on-insulator (SOI) platform. Simulations indicate the bidirectional grating coupler (BGC) is widely misalignment tolerant, with an excess coupling loss of only 0.55 dB within ±3 μm fiber misalignment range. Measurement shows the excess coupling loss of the BGC is only 0.7 dB within a ±2 μm fiber misalignment range. The bidirectional grating structure not only functions as an optical coupler, but also acts as a beam splitter. By using the bidirectional grating coupler, the silicon optical modulator shows low insertion loss and large misalignment tolerance. The eye diagrams of the modulator at 25 Gb/s don’t show any obvious deterioration within the waveguide-direction fiber misalignment ranger of ±2 μm, and still open clearly when the misalignment offset is as large as ±4 μm

    1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications

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    A zero-pole cancellation transimpedance amplifier (TIA) has been realized in 0.35 μm RF CMOS tech nology for Gigabit Ethernet applications. The TIA exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration. Simulation results show that the proposed TIA has a bandwidth of 1.9 GHz and a transimpedance gain of 65 dB·Ω for 1.5 pF photodiode capaci tance, with a gain-bandwidth product of 3.4 THz·Ω. Even with 2 pF photodiode capacitance, the bandwidth exhibits a decline of only 300 MHz, confirming the mechanism of the zero-pole cancellation configuration. The input resis tance is 50 Ω, and the average input noise current spectral density is 9.7 pA/(Hz)~(1/2). Testing results shows that the eye diagram at 1 Gb/s is wide open. The chip dissipates 17 mW under a single 3.3 V supply

    A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor

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    We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor (MOS) capacitor configuration integrated into silicon-on-insulator (SOI).Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure,which boosts the modulation efficiency compared with a single MOS capacitor.The simulation results demonstrate that the VπLπ product is 2.4V·cm.The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve,respectively,indicating a bandwidth of 8GHz.The phase shift efficiency and bandwidth can be enhanced by rib width scaling

    100 Gb/s silicon photonic WDM transmitter with misalignment-tolerant surface-normal optical interfaces

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    A 4 × 25 Gb/s ultrawide misalignment tolerance wavelength-division-multiplex (WDM) transmitter based on novel bidirectional vertical grating coupler has been demonstrated on complementary metal-oxide-semiconductor (CMOS)-compatible silicon-on-insulator (SOI) platform. Simulations indicate the bidirectional grating coupler (BGC) is widely misalignment tolerant, with an excess coupling loss of only 0.55 dB within ±3 µm fiber misalignment range. Measurement shows the excess coupling loss of the BGC is only 0.7 dB within a ±2 µm fiber misalignment range. The bidirectional grating structure not only functions as an optical coupler, but also acts as a beam splitter. By using the bidirectional grating coupler, the silicon optical modulator shows low insertion loss and large misalignment tolerance. The eye diagrams of the modulator at 25 Gb/s don’t show any obvious deterioration within the waveguide-direction fiber misalignment ranger of ±2 µm, and still open clearly when the misalignment offset is as large as ±4 µm
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