New records of three species of Majid crabs (Decapoda, Brachyura) from Taiwan

Three spider crabs, Pseudomicippe tenuipes A. Milne-Edwards, 1865, Micippa philyra (Herbst, 1803), and Tiarinia gracilis Dana, 1852 are recorded for the first time from Taiwan. Morphological differences of these species with their most similar congeners are discussed

On two new brachyuran records (Decapoda, Dromiidae and Xanthidae) from Taiwan

Two brachyuran crabs, Cryptodromia tuberculata Stimpson, 1858 (Dromiidae) and Leptodius nigromaculatus Serene, 1962 (Xanthidae) are recorded for the first time from the coasts of the main island of Taiwan. The taxonomy of C. tuberculata and L. nigromaculatus is discussed, and local distribution patterns of other species of Leptodius are compared

GaN Epilayer Grown on Ga2O3 Sacrificial Layer for Chemical Lift-Off Application

GaN-on-sapphire structure with a Ga2O3 sacrificial layer was employed for the chemical lift-off process application. The ((2) over bar 01) beta-oriented Ga2O3 thin film was first deposited on the c-plane sapphire substrate using pulsed laser deposition, followed by the GaN growth via metalorganic vapor phase epitaxy under N-2 and H-2 environment in sequence. From the transmission-electron-microscopy observation, the orientation relationship between GaN and beta-Ga2O3 was identified as GaN[11 (2) over bar0]parallel to Ga2O3[010]. A GaN epilayer with an electroplated copper substrate was demonstrated using a chemical lift-off process where the Ga2O3 sacrificial layer can be laterally etched out with a hydrofluoric solution. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.002111esl] All rights reserved

Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing

Phosphorus activated in germanium epitaxy atop Si wafer by low-temperature microwave annealing technique was investigated in this letter. Compared to the conventional RTA process, the temperature of phosphorus activation could be 120 degrees C to 140 degrees C which is an improvement in temperature reduction at the same sheet resistance. According to the SRP, up to 150 degrees C reduction in maximum temperature at the same activation concentration (about 2 x 10(19) cm(-3)) could be achieved. Through adjusting the microwave power and process time, sheet resistance could be decreased while suppressing dopant diffusion. In addition, the inserted susceptor wafers above and below the processing wafer also suppressed the dopant diffusion and improved film roughness

Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation

In this letter, nanoscale p-MOS TFTs with a TiN gate electrode were realized using a novel microwave (MW) dopant-activation technique. We compared both low-temperature MW annealing and rapid thermal annealing. We successfully activated the source/drain region and suppressed the short-channel effects using low-temperature MW annealing. This technique is promising from the viewpoint of realizing high-performance and low-cost upper layer nanoscale transistors required for low-temperature 3-D integrated circuit fabrication