Electronic Structures of N-doped Graphene with Native Point Defects

Nitrogen doping in graphene has important implications in graphene-based devices and catalysts. We have performed the density functional theory calculations to study the electronic structures of N-doped graphene with vacancies and Stone-Wales defect. Our results show that monovacancies in graphene act as hole dopants and that two substitutional N dopants are needed to compensate for the hole introduced by a monovacancy. On the other hand, divacancy does not produce any free carriers. Interestingly, a single N dopant at divacancy acts as an acceptor rather than a donor. The interference between native point defect and N dopant strongly modifies the role of N doping regarding the free carrier production in the bulk pi bands. For some of the defects and N dopant-defect complexes, localized defect pi states are partially occupied. Discussion on the possibility of spin polarization in such cases is given. We also present qualitative arguments on the electronic structures based on the local bond picture. We have analyzed the 1s-related x-ray photoemission and adsorption spectroscopy spectra of N dopants at vacancies and Stone-Wales defect in connection with the experimental ones. We also discuss characteristic scanning tunneling microscope (STM) images originating from the electronic and structural modifications by the N dopant-defect complexes. STM imaging for small negative bias voltage will provide important information about possible active sites for oxygen reduction reaction.Comment: 40 pages, 2 tables, 16 figures. The analysis of Clar sextets is added. This version is published on PHYSICAL REVIEW B 87, 165401(2013

Potential high-TcT_{c} superconductivity in YCeH20_{20} and LaCeH20_{20} under pressure

Lanthanum, yttrium, and cerium hydrides are the three most well-known superconducting binary hydrides, which have gained great attention in both theoretical and experimental studies. Recent studies have shown that ternary hydrides composed of lanthanum and yttrium can achieve high superconductivity around 253 K. In this study, we employ the evolutionary-algorithm-based crystal structure prediction (CSP) method and first-principles calculations to investigate the stability and superconductivity of ternary hydrides composed of (Y, Ce) and (La, Ce) under high pressure. Our calculations show that there are multiple stable phases in Y-Ce-H and La-Ce-H hydrides, among which $P4/mmm$-YCeH$_{8}$, $P4/mmm$-LaCeH$_{8}$, $R\bar{3}m$-YCeH$_{20}$, and $R\bar{3}m$-LaCeH$_{20}$ possessing H$_{18}$ or H$_{32}$ clathrate structures can maintain both of the thermodynamic and dynamic stabilities. In addition, we also find that these phases also maintain a strong resistance to decomposition at high temperature. Electron-phonon coupling calculations show that all of these four phases can exhibit high-temperature superconductivity. $R\bar{3}m$-YCeH$_{20}$ is predicted to have a superconducting transition temperature ($T_{c}$) as high as 246 K at 350 GPa. The $T_{c}$ value of $R\bar{3}m$-LaCeH$_{20}$ at 250 GPa is about 233 K, which is slightly smaller than that of $R\bar{3}m$-YCeH$_{20}$. However, it is found that $R\bar{3}m$-LaCeH$_{20}$ can be stabilized at 200 GPa, making the high-pressure synthesis of LaCeH$_{20}$ easier.Comment: 5 figure

Interplay between Nitrogen Dopants and Native Point Defects in Graphene

To understand the interaction between nitrogen dopants and native point defects in graphene, we have studied the energetic stability of N-doped graphene with vacancies and Stone-Wales (SW) defect by performing the density functional theory calculations. Our results show that N substitution energetically prefers to occur at the carbon atoms near the defects, especially for those sites with larger bond shortening, indicating that the defect-induced strain plays an important role in the stability of N dopants in defective graphene. In the presence of monovacancy, the most stable position for N dopant is the pyridinelike configuration, while for other point defects studied (SW defect and divacancies) N prefers a site in the pentagonal ring. The effect of native point defects on N dopants is quite strong: While the N doping is endothermic in defect-free graphene, it becomes exothermic for defective graphene. Our results imply that the native point defect and N dopant attract each other, i.e., cooperative effect, which means that substitutional N dopants would increase the probability of point defect generation and vice versa. Our findings are supported by recent experimental studies on the N doping of graphene. Furthermore we point out possibilities of aggregation of multiple N dopants near native point defects. Finally we make brief comments on the effect of Fe adsorption on the stability of N dopant aggregation.Comment: 10 pages, 5 figures. Figure 4(g) and Figure 5 are corrected. One additional table is added. This is the final version for publicatio

Data-driven Exploration of New Pressure-induced Superconductivity in PbBi2_2Te4_4 with Two Transition Temperatures

Candidates compounds for new thermoelectric and superconducting materials, which have narrow band gap and flat bands near band edges, were exhaustively searched by the high-throughput first-principles calculation from an inorganic materials database named AtomWork. We focused on PbBi$_2$Te$_4$ which has the similar electronic band structure and the same crystal structure with those of a pressure-induced superconductor SnBi2Se4 explored by the same data-driven approach. The PbBi$_2$Te$_4$ was successfully synthesized as single crystals using a melt and slow cooling method. The core level X-ray photoelectron spectroscopy analysis revealed Pb2+, Bi3+ and Te2- valence states in PbBi$_2$Te$_4$. The thermoelectric properties of the PbBi$_2$Te$_4$ sample were measured at ambient pressure and the electrical resistivity was also evaluated under high pressure using a diamond anvil cell with boron-doped diamond electrodes. The resistivity decreased with increase of the pressure, and two pressure-induced superconducting transitions were discovered at 3.4 K under 13.3 GPa and at 8.4 K under 21.7 GPa. The data-driven approach shows promising power to accelerate the discovery of new thermoelectric and superconducting materials

Pressure-Induced Superconductivity in Layered Transition-metal Chalcogenides (Zr,Hf)GeTe4_{4} Explored by Data-driven Approach

Layered transition-metal chalcogenides (Zr,Hf)GeTe$_{4}$ were screened out from database of Atomwork as a candidate for pressure-induced superconductivity due to their narrow band gap and high density of state near the Fermi level. The (Zr,Hf)GeTe$_{4}$ samples were synthesized in single crystal and then the compositional ratio, crystal structures, and valence states were investigated via energy dispersive spectrometry, single crystal X-ray diffraction, and X-ray photoelectron spectroscopy, respectively. The pressure-induced superconductivity in both crystals were first time reported by using a diamond anvil cell with a boron-doped diamond electrode and an undoped diamond insulating layer. The maximum superconducting transition temperatures of ZrGeTe$_{4}$ and HfGeTe$_{4}$ were 6.5 K under 57 GPa and 6.6 K under 60 GPa, respectively