Spatial vulnerability analysis and thematic mapping of urban floods: A case study of 100-year floodplain areas of Birmingham, Alabama

The social and economic impact of urban flooding is becoming more severe in the United States over time. Urban areas are mostly vulnerable to flash floods because of the impervious surface, which increases the surface runoff. More than 80 percent of people live in urban areas in the United States, and they are at higher risk of urban flooding. Although many urban areas have a higher risk of urban flooding, there is still a significant knowledge gap of understanding between the minority\u27s and nonminority\u27s vulnerability to urban floods. Therefore, using Birmingham, Alabama, as a study area, this research designs a quantitative thematic mapping method to assess the flood risks of urban population and buildings. In this research, census data was used to assess urban residents\u27 vulnerability to flooding using thematic mapping method – location quotient (LQ) and compare it with the widely used social vulnerability index. The findings suggest that the aggregation of White populations is much higher compared to minorities. This research also developed a flood risk model using integrated GIS and cartographic approach considering different environmental factors that influence the urban floods. This study found that the Valley Creek area is the highest flood risk zone in Birmingham, and has the highest percentage of residential (i.e., 56.14 %) and commercial (i.e., 75.34 %) buildings located in very high flood risk areas. The decennial census data from 1990 to 2015 was used to examine whether vulnerable population groups aggregated more in the flooding areas or moved away from Birmingham\u27s flooding areas in the past thirty years. The findings of this research indicate that most minorities are aggregating more in the floodplain areas, whereas the non-minorities are moving away from the flooding regions

A Novel Process for GeSi Thin Film Synthesis

A unique process of fabricating a strained layer GexSi1-x on insulator is demonstrated. Such strained heterostructures are useful in the fabrication of high-mobility transistors. This technique incorporates well-established silicon processing technology e.g., ion implantation and thermal oxidation. A dilute GeSi layer is initially formed by implanting Ge+ into a silicon-on-insulator (SOI) substrate. Thermal oxidation segregates the Ge at the growing oxide interface to form a distinct GexSi1-x thin-film with a composition that can be tailored by controlling the oxidation parameters (e.g. temperature and oxidation ambient). In addition, the film thickness can be controlled by implantation fluence, which is important since the film forms pseudomorphically below 2×1016 Ge/cm2. Continued oxidation consumes the underlying Si leaving the strained GeSi film encapsulated by the two oxide layers, i.e. the top thermal oxide and the buried oxide. Removal of the thermal oxide by a dilute HF etch completes the process. Strain relaxation can be achieved by either of two methods. One involves vacancy injection by ion implantation to introduce sufficient open-volume within the film to compensate for the compressive strain. The other depends upon the formation of GeO2. If Ge is oxidized in the absence of Si, it evaporates as GeO(g) resulting in spontaneous relaxation within the strained film. Conditions under which this occurs have been discussed along with elaborated results of oxidation kinetics of Ge-ion implanted silicon. Rutherford backscattering spectrometry (RBS), ion channeling, Raman spectroscopy and scanning electron microscopy (SEM) were used as the characterization techniques

Evaluation of the hydrogen solubility and diffusivity in proton-conducting oxides by converting the PSL values of a tritium imaging plate

Proton-conducting oxides have potential applications in hydrogen sensors, hydrogen pumps, and other electrochemical devices including the tritium purification and recovery systems of nuclear fusion reactors. Although the distribution of hydrogen (H) in such oxide materials is an important aspect, its precise measurement is difficult. In the present study, the hydrogen solubility and diffusivity behavior of BaZr0.9Y0.1O2.95 (BZY), BaZr0.955Y0.03Co0.015O2.97 (BZYC), and CaZr0.9In0.1O2.95 (CZI) were studied using tritiated heavy water vapor i.e., DTO (~2 kPa, tritium (T) = 0.1%) by converting the photostimulated luminescence (PSL) values of the imaging plate (IP). The samples were exposed to DTO vapor at 673 K for 2 h or at 873 K for 1 h. The disc-shaped oxide specimens (diameter ~7.5 mm; thickness ~2.3 mm; theoretical density (TD) > 98 %) were prepared by conventional powder metallurgy. The IP images of the specimen surfaces of all the three materials T-exposed revealed that BZY showed the most uniform T distribution with the highest tritium activity. The cross-sectional T concentration profiles of the cut specimens showed that T diffused deeper into BZY and BZYC than into CZI. The hydrogen solubility and diffusivity in the CZI specimen were lower than that in the BZY and BZYC specimens. This suggested that barium zirconates were more favorable proton conductors than calcium zirconates.Comment: 19 pages, 12 figure

Recent progress of fabrication, characterization, and applications of anodic aluminum oxide (AAO) membrane: A review

The progress of membrane technology with the development of membranes with controlled parameters led to porous membranes. These membranes can be formed using different methods and have numerous applications in science and technology. Anodization of aluminum in this aspect is an electro-synthetic process that changes the surface of the metal through oxidation to deliver an anodic oxide layer. This process results in a self-coordinated, exceptional cluster of round and hollow formed pores with controllable pore widths, periodicity, and thickness. After the initial introduction, the paper proceeds with a brief overview of anodizing process. That engages anodic aluminum oxide (AAO) layers to be used as formats in various nanotechnology applications without the necessity for expensive lithographical systems. This review article surveys the current status of the investigation on AAO membranes. A comprehensive analysis is performed on AAO membranes in applications; filtration, sensors, drug delivery, template-assisted growth of various nanostructures. Their multiple usages in nanotechnology have also been discussed to gather nanomaterials and devices or unite them into specific applications, such as nano-electronic gadgets, channel layers, and clinical platforms tissue designing. From this review, the fact that the specified enhancement of properties of AAO can be done by varying geometric parameters of AAO has been highlighted. No review paper focused on a detailed discussion of applications of AAO with prospects and challenges. This review paper represents the formation, properties, applications with objective consideration of the prospects and challenges of AAO applications. The prospects may appeal to researchers to promote the development of unique membranes with functionalization and controlled geometric parameters and check the feasibility of the AAO membranes in nano-devices.Comment: 36 pages, 19 figures, 8 table