Report on active and planned spacecraft and experiments

Information is presented, concerning active and planned spacecraft and experiments known to the National Space Science Data Center. The information included a wide range of disciplines: astronomy, earth sciences, meteorology, planetary sciences, aeronomy, particles and fields, solar physics, life sciences, and material sciences. These spacecraft projects represented the efforts and funding of individual countries as well as cooperative arrangements among different countries

Regularization of identity based solution in string field theory

We demonstrate that an Erler-Schnabl type solution in cubic string field theory can be naturally interpreted as a gauge invariant regularization of an identity based solution. We consider a solution which interpolates between an identity based solution and ordinary Erler-Schnabl one. Two gauge invariant quantities, the classical action and the closed string tadpole, are evaluated for finite value of the gauge parameter. It is explicitly checked that both of them are independent of the gauge parameter.Comment: 9 pages, minor typos corrected and references adde

Black Holes with Multiple Charges and the Correspondence Principle

We consider the entropy of near extremal black holes with multiple charges in the context of the recently proposed correspondence principle of Horowitz and Polchinski, including black holes with two, three and four Ramond-Ramond charges. We find that at the matching point the black hole entropy can be accounted for by massless open strings ending on the D-branes for all cases except a black hole with four Ramond-Ramond charges, in which case a possible resolution in terms of brane-antibrane excitations is considered.Comment: 26 pages, harvmac, minor correction

Counting States of Black Strings with Traveling Waves

We consider a family of solutions to string theory which depend on arbitrary functions and contain regular event horizons. They describe six dimensional extremal black strings with traveling waves and have an inhomogeneous distribution of momentum along the string. The structure of these solutions near the horizon is studied and the horizon area computed. We also count the number of BPS string states at weak coupling whose macroscopic momentum distribution agrees with that of the black string. It is shown that the number of such states is given by the Bekenstein-Hawking entropy of the black string with traveling waves.Comment: 21 pages RevTex. One equation correcte

RDWIA analysis of 12C(e,e'p) for Q^2 < 2 (GeV/c)^2

We analyze data for 12C(e,e'p) with Q^2 < 2 (GeV/c)^2 using the relativistic distorted-wave impulse approximation (RDWIA) based upon Dirac-Hartree wave functions. The 1p normalization extracted from data for Q^2 > 0.6 (GeV/c)^2 is approximately 0.87, independent of Q^2, which is consistent with the predicted depletion by short-range correlations. The total 1p and 1s strength for E_m < 80 MeV approaches 100% of IPSM, consistent with a continuum contribution for 30 < E_m < 80 MeV of about 12% of IPSM. Similarly, a scale factor of 1.12 brings RDWIA calculations into good agreement with 12C(e,e'p) data for transparency. We also analyzed low Q^2 data from which a recent NDWIA analysis suggested that spectroscopic factors might depend strongly upon the resolution of the probe. We find that momentum distributions for their empirical Woods-Saxon wave functions fit to low Q^2 data for parallel kinematics are too narrow to reproduce data for quasiperpendicular kinematics, especially for larger Q^2, and are partly responsible for reducing fitted normalization factors.Comment: 19 pages, 14 figures, to be submitted to PR

Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2K shows a thermal-activation-type behavior with an activation energy of 0.6eV