Intrinsic electronic superconducting phases at 60 K and 90 K in double-layer YBa2_2Cu3_3O6+δ_{6+\delta}

We study superconducting transition temperature ($T_c$) of oxygen-doped double-layer high-temperature superconductors YBa$_2$Cu$_3$O$_{6+\delta}$ (0 $\le$ $\delta$ $\le$ 1) as a function of the oxygen dopant concentration ($\delta$) and planar hole-doping concentration ($P_{pl}$). We find that $T_c$, while clearly influenced by the development of the chain ordering as seen in the $T_c$ $vs.$ $\delta$ plot, lies on a universal curve originating at the critical hole concentration ($P_c$) = 1/16 in the $T_c$ $vs.$ $P_{pl}$ plot. Our analysis suggests that the universal behavior of $T_c$($P_{pl}$) can be understood in terms of the competition and collaboration of chemical-phases and electronic-phases that exist in the system. We conclude that the global superconductivity behavior of YBa$_2$Cu$_3$O$_{6+\delta}$ as a function of doping is electronically driven and dictated by pristine electronic phases at magic doping numbers that follow the hierarchical order based on $P_c$, such as 2 $\times$ $P_c$, 3 $\times$ $P_c$ and 4 $\times$ $P_c$. We find that there are at least two intrinsic electronic superconducting phases of $T_c$ = 60 K at 2 $\times$ $P_c$ = 1/8 and $T_c$ = 90 K at 3 $\times$ $P_c$ = 3/16.Comment: 4 pages, 2 figure

Extreme Sensitivity of Superconductivity to Stoichiometry in FeSe (Fe1+dSe)

The recently discovered iron arsenide superconductors, which display superconducting transition temperatures as high as 55 K, appear to share a number of general features with high-Tc cuprates, including proximity to a magnetically ordered state and robustness of the superconductivity in the presence of disorder. Here we show that superconductivity in Fe1+dSe, the parent compound of the superconducting arsenide family, is destroyed by very small changes in stoichiometry. Further, we show that non-superconducting Fe1+dSe is not magnetically ordered down to low temperatures. These results suggest that robust superconductivity and immediate instability against an ordered magnetic state should not be considered as intrinsic characteristics of iron-based superconducting systems, and that Fe1+dSe may present a unique opportunity for determining which materials characteristics are critical to the existence of superconductivity in high Tc iron arsenide superconductors and which are not.Comment: Updated to reflect final version and include journal referenc

Topological Surface States and Dirac point tuning in ternary Bi2Te2Se class of topological insulators

Using angle-resolved photoemission spectroscopy, we report electronic structure for representative members of ternary topological insulators. We show that several members of this family, such as Bi2Se2Te, Bi2Te2Se, and GeBi2Te4, exhibit a singly degenerate Dirac-like surface state, while Bi2Se2S is a fully gapped insulator with no measurable surface state. One of these compounds, Bi2Se2Te, shows tunable surface state dispersion upon its electronic alloying with Sb (SbxBi2-xSe2Te series). Other members of the ternary family such as GeBi2Te4 and BiTe1.5S1.5 show an in-gap surface Dirac point, the former of which has been predicted to show nonzero weak topological invariants such as (1;111); thus belonging to a different topological class than BiTe1.5S1.5. The measured band structure presented here will be a valuable guide for interpreting transport, thermoelectric, and thermopower measurements on these compounds. The unique surface band topology observed in these compounds contributes towards identifying designer materials with desired flexibility needed for thermoelectric and spintronic device fabrication.Comment: 9 pages, 6 figures; Related results at http://online.kitp.ucsb.edu/online/topomat11/hasan

Tuning the Charge Density Wave and Superconductivity in CuxTaS2

We report the characterization of layered, 2H-type CuxTaS2, for x between 0 and 0.12. The charge density wave (CDW), at 70 K for TaS2, is destabilized with Cu doping. The sub-1K superconducting transition in undoped 2H-TaS2 jumps quickly to 2.5 K at low x, increases to 4.5 K at the optimal composition Cu0.04TaS2, and then decreases at higher x. The electronic contribution to the specific heat, first increasing and then decreasing as a function of Cu content, is 12 mJ mol-1 K-2 at Cu0.04TaS2. Electron diffraction studies show that the CDW remains present at the optimal superconducting composition, but with both a changed q vector and decreased coherence length. We present an electronic phase diagram for the system.Comment: 7 pages, 9 figures. To be published in Physical Review

A Universal Intrinsic Scale of Hole Concentration for High-Tc Cuprates

We have measured thermoelectric power (TEP) as a function of hole concentration per CuO2 layer, Ppl, in Y1-xCaxBa2Cu3O6 (Ppl = x/2) with no oxygen in the Cu-O chain layer. The room-temperature TEP as a function of Ppl, S290(Ppl), of Y1-xCaxBa2Cu3O6 behaves identically to that of La2-zSrzCuO4 (Ppl = z). We argue that S290(Ppl) represents a measure of the intrinsic equilibrium electronic states of doped holes and, therefore, can be used as a common scale for the carrier concentrations of layered cuprates. We shows that the Ppl determined by this new universal scale is consistent with both hole concentration microscopically determined by NQR and the hole concentration macroscopically determined by the Cu valency. We find two characteristic scaling temperatures, TS* and TS2*, in the TEP vs. temperature curves that change systematically with doping. Based on the universal scale, we uncover a universal phase diagram in which almost all the experimentally determined pseudogap temperatures as a function of Ppl fall on two common curves; upper pseudogap temperature defined by the TS* versus Ppl curve and lower pseudogap temperature defined by the TS2* versus Ppl curve. We find that while pseudogaps are intrinsic properties of doped holes of a single CuO2 layer for all high-Tc cuprates, Tc depends on the number of layers, therefore the inter-layer coupling, in each individual system.Comment: 11 pages, 9 figures, accepted for publication in Physical Review

Experimental investigation of the dynamics of entanglement: Sudden death, complementarity, and continuous monitoring of the environment

We report on an experimental investigation of the dynamics of entanglement between a single qubit and its environment, as well as for pairs of qubits interacting independently with individual environments, using photons obtained from parametric down-conversion. The qubits are encoded in the polarizations of single photons, while the interaction with the environment is implemented by coupling the polarization of each photon with its momentum. A convenient Sagnac interferometer allows for the implementation of several decoherence channels and for the continuous monitoring of the environment. For an initially-entangled photon pair, one observes the vanishing of entanglement before coherence disappears. For a single qubit interacting with an environment, the dynamics of complementarity relations connecting single-qubit properties and its entanglement with the environment is experimentally determined. The evolution of a single qubit under continuous monitoring of the environment is investigated, demonstrating that a qubit may decay even when the environment is found in the unexcited state. This implies that entanglement can be increased by local continuous monitoring, which is equivalent to entanglement distillation. We also present a detailed analysis of the transfer of entanglement from the two-qubit system to the two corresponding environments, between which entanglement may suddenly appear, and show instances for which no entanglement is created between dephasing environments, nor between each of them and the corresponding qubit: the initial two-qubit entanglement gets transformed into legitimate multiqubit entanglement of the Greenberger-Horne-Zeilinger (GHZ) type.Comment: 15 pages, 14 figures; only .ps was working, now .pdf is also availabl

High pressure transport properties of the topological insulator Bi2Se3

We report x-ray diffraction, electrical resistivity, and magnetoresistance measurements on Bi2Se3 under high pressure and low temperature conditions. Pressure induces profound changes in both the room temperature value of the electrical resistivity as well as the temperature dependence of the resistivity. Initially, pressure drives Bi2Se3 towards increasingly insulating behavior and then, at higher pressures, the sample appears to enter a fully metallic state coincident with a change in the crystal structure. Within the low pressure phase, Bi2Se3 exhibits an unusual field dependence of the transverse magnetoresistance that is positive at low fields and becomes negative at higher fields. Our results demonstrate that pressures below 8 GPa provide a non-chemical means to controllably reduce the bulk conductivity of Bi2Se3

Stability of Unconventional Superconductivity on Surfaces of Topological Insulators

Superconductivity on the surface of topological insulators is known to be anisotropic and unconventional in that the symmetry is the mixture of s-wave and nodeless p-wave component. In contrast to Anderson's theorem for the insensitivity of the s-wave superconducting critical temperature to the nonmagnetic (time-reversal symmetric (TRS)) impurities, anisotropic superconductors including nodeless p-wave one are in general fragile even with small concentration of the TRS impurities. By employing the Abrikosov-Gor'kov theory, we clarify that this type of unconventional superconductivity emergent on the surface state of the strong topological insulators robustly survive against TRS impurities

Evolution with hole doping of the electronic excitation spectrum in the cuprate superconductors

The recent scanning tunnelling results of Alldredge et al on Bi-2212 and of Hanaguri et al on Na-CCOC are examined from the perspective of the BCS/BEC boson-fermion resonant crossover model for the mixed-valent HTSC cuprates. The model specifies the two energy scales controlling the development of HTSC behaviour and the dichotomy often now alluded to between nodal and antinodal phenomena in the HTSC cuprates. Indication is extracted from the data as to how the choice of the particular HTSC system sees these two basic energy scales (cursive-U, the local pair binding energy and, Delta-sc, the nodal BCS-like gap parameter) evolve with doping and change in degree of metallization of the structurally and electronically perturbed mixed-valent environment.Comment: 19 pages, 5 figure

Superconductivity in Pseudo-Binary Silicide SrNixSi2-x with AlB2-Type Structure

We demonstrate the emergence of superconductivity in pseudo-binary silicide SrNixSi2-x. The compound exhibits a structural phase transition from the cubic SrSi2-type structure (P4132) to the hexagonal AlB2-type structure (P6/mmm) upon substituting Ni for Si at approximately x = 0.1. The hexagonal structure is stabilized in the range of 0.1 < x < 0.7. The superconducting phase appears in the vicinity of the structural phase boundary. Ni acts as a nonmagnetic dopant, as confirmed by the Pauli paramagnetic behavior.Comment: 12 pages, 5 figure