6 research outputs found
Theoretical Study of H<sub>2</sub>O Adsorption on Zn<sub>2</sub>GeO<sub>4</sub> Surfaces: Effects of Surface State and Structure–Activity Relationships
We employed the density functional
theory to investigate the interaction of H<sub>2</sub>O with Zn<sub>2</sub>GeO<sub>4</sub> surfaces, considering both perfect and defective
surfaces. The results revealed that the interaction of H<sub>2</sub>O with Zn<sub>2</sub>GeO<sub>4</sub> surfaces was dependent on the
structure of the latter. For perfect surfaces, H<sub>2</sub>O adsorbed
at the Ge<sub>3c</sub>···O<sub>2c</sub> site of a (010)
surface could spontaneously dissociate into an H atom and an OH group,
whereas H<sub>2</sub>O tended to adsorb at the O<sub>2c</sub>-M<sub>3c</sub>-O<sub>3c</sub> site of a (001) surface by molecular adsorption.
The presence of oxygen defects was found to strongly promote H<sub>2</sub>O dissociation on the (010) surface. Analysis of the surface
electronic structure showed a large density of Ge states at the top
of the valence band for both perfect and defective (010) surfaces,
which is an important factor affecting H<sub>2</sub>O dissociation.
In contrast, perfect and defective (001) surfaces with surface Ge
states buried inside the valence band were significantly less reactive,
and H<sub>2</sub>O was adsorbed on these surfaces in the molecular
form. This information about the adsorbate geometries, catalytic activity
of various surface sites, specific electronic structure of surface
Ge atoms, and their relevance to surface structure will be useful
for the future design of the Zn<sub>2</sub>GeO<sub>4</sub> photocatalyst,
as well as for the atomistic-level understanding of other structure-sensitive
reactions
Theoretical Study of H<sub>2</sub>O Adsorption on Zn<sub>2</sub>GeO<sub>4</sub> Surfaces: Effects of Surface State and Structure–Activity Relationships
We employed the density functional
theory to investigate the interaction of H<sub>2</sub>O with Zn<sub>2</sub>GeO<sub>4</sub> surfaces, considering both perfect and defective
surfaces. The results revealed that the interaction of H<sub>2</sub>O with Zn<sub>2</sub>GeO<sub>4</sub> surfaces was dependent on the
structure of the latter. For perfect surfaces, H<sub>2</sub>O adsorbed
at the Ge<sub>3c</sub>···O<sub>2c</sub> site of a (010)
surface could spontaneously dissociate into an H atom and an OH group,
whereas H<sub>2</sub>O tended to adsorb at the O<sub>2c</sub>-M<sub>3c</sub>-O<sub>3c</sub> site of a (001) surface by molecular adsorption.
The presence of oxygen defects was found to strongly promote H<sub>2</sub>O dissociation on the (010) surface. Analysis of the surface
electronic structure showed a large density of Ge states at the top
of the valence band for both perfect and defective (010) surfaces,
which is an important factor affecting H<sub>2</sub>O dissociation.
In contrast, perfect and defective (001) surfaces with surface Ge
states buried inside the valence band were significantly less reactive,
and H<sub>2</sub>O was adsorbed on these surfaces in the molecular
form. This information about the adsorbate geometries, catalytic activity
of various surface sites, specific electronic structure of surface
Ge atoms, and their relevance to surface structure will be useful
for the future design of the Zn<sub>2</sub>GeO<sub>4</sub> photocatalyst,
as well as for the atomistic-level understanding of other structure-sensitive
reactions
Theoretical Study of H<sub>2</sub>O Adsorption on Zn<sub>2</sub>GeO<sub>4</sub> Surfaces: Effects of Surface State and Structure–Activity Relationships
We employed the density functional
theory to investigate the interaction of H<sub>2</sub>O with Zn<sub>2</sub>GeO<sub>4</sub> surfaces, considering both perfect and defective
surfaces. The results revealed that the interaction of H<sub>2</sub>O with Zn<sub>2</sub>GeO<sub>4</sub> surfaces was dependent on the
structure of the latter. For perfect surfaces, H<sub>2</sub>O adsorbed
at the Ge<sub>3c</sub>···O<sub>2c</sub> site of a (010)
surface could spontaneously dissociate into an H atom and an OH group,
whereas H<sub>2</sub>O tended to adsorb at the O<sub>2c</sub>-M<sub>3c</sub>-O<sub>3c</sub> site of a (001) surface by molecular adsorption.
The presence of oxygen defects was found to strongly promote H<sub>2</sub>O dissociation on the (010) surface. Analysis of the surface
electronic structure showed a large density of Ge states at the top
of the valence band for both perfect and defective (010) surfaces,
which is an important factor affecting H<sub>2</sub>O dissociation.
In contrast, perfect and defective (001) surfaces with surface Ge
states buried inside the valence band were significantly less reactive,
and H<sub>2</sub>O was adsorbed on these surfaces in the molecular
form. This information about the adsorbate geometries, catalytic activity
of various surface sites, specific electronic structure of surface
Ge atoms, and their relevance to surface structure will be useful
for the future design of the Zn<sub>2</sub>GeO<sub>4</sub> photocatalyst,
as well as for the atomistic-level understanding of other structure-sensitive
reactions
Theoretical Study of H<sub>2</sub>O Adsorption on Zn<sub>2</sub>GeO<sub>4</sub> Surfaces: Effects of Surface State and Structure–Activity Relationships
We employed the density functional
theory to investigate the interaction of H<sub>2</sub>O with Zn<sub>2</sub>GeO<sub>4</sub> surfaces, considering both perfect and defective
surfaces. The results revealed that the interaction of H<sub>2</sub>O with Zn<sub>2</sub>GeO<sub>4</sub> surfaces was dependent on the
structure of the latter. For perfect surfaces, H<sub>2</sub>O adsorbed
at the Ge<sub>3c</sub>···O<sub>2c</sub> site of a (010)
surface could spontaneously dissociate into an H atom and an OH group,
whereas H<sub>2</sub>O tended to adsorb at the O<sub>2c</sub>-M<sub>3c</sub>-O<sub>3c</sub> site of a (001) surface by molecular adsorption.
The presence of oxygen defects was found to strongly promote H<sub>2</sub>O dissociation on the (010) surface. Analysis of the surface
electronic structure showed a large density of Ge states at the top
of the valence band for both perfect and defective (010) surfaces,
which is an important factor affecting H<sub>2</sub>O dissociation.
In contrast, perfect and defective (001) surfaces with surface Ge
states buried inside the valence band were significantly less reactive,
and H<sub>2</sub>O was adsorbed on these surfaces in the molecular
form. This information about the adsorbate geometries, catalytic activity
of various surface sites, specific electronic structure of surface
Ge atoms, and their relevance to surface structure will be useful
for the future design of the Zn<sub>2</sub>GeO<sub>4</sub> photocatalyst,
as well as for the atomistic-level understanding of other structure-sensitive
reactions
Surface Dependence of CO<sub>2</sub> Adsorption on Zn<sub>2</sub>GeO<sub>4</sub>
An understanding of the interaction between Zn<sub>2</sub>GeO<sub>4</sub> and the CO<sub>2</sub> molecule is vital for developing
its
role in the photocatalytic reduction of CO<sub>2</sub>. In this study,
we present the structure and energetics of CO<sub>2</sub> adsorbed
onto the stoichiometric perfectly and the oxygen vacancy defect of
Zn<sub>2</sub>GeO<sub>4</sub> (010) and (001) surfaces using density
functional theory slab calculations. The major finding is that the
surface structure of the Zn<sub>2</sub>GeO<sub>4</sub> is important
for CO<sub>2</sub> adsorption and activation, i.e., the interaction
of CO<sub>2</sub> with Zn<sub>2</sub>GeO<sub>4</sub> surfaces is structure-dependent.
The ability of CO<sub>2</sub> adsorption on (001) is higher than that
of CO<sub>2</sub> adsorption on (010). For the (010) surface, the
active sites O<sub>2c</sub>···Ge<sub>3c</sub> and Ge<sub>3c</sub>–O<sub>3c</sub> interact with the CO<sub>2</sub> molecule
leading to a bidentate carbonate species. The presence of Ge<sub>3c</sub>–O<sub>2c</sub>···Ge<sub>3c</sub> bonds on
the (001) surface strengthens the interaction of CO<sub>2</sub> with
the (001) surface, and results in a bridged carbonate-like species.
Furthermore, a comparison of the calculated adsorption energies of
CO<sub>2</sub> adsorption on perfect and defective Zn<sub>2</sub>GeO<sub>4</sub> (010) and (001) surfaces shows that CO<sub>2</sub> has the
strongest adsorption near a surface oxygen vacancy site, with an adsorption
energy −1.05 to −2.17 eV, stronger than adsorption of
CO<sub>2</sub> on perfect Zn<sub>2</sub>GeO<sub>4</sub> surfaces (<i>E</i><sub>ads</sub> = −0.91 to −1.12 eV) or adsorption
of CO<sub>2</sub> on a surface oxygen defect site (<i>E</i><sub>ads</sub> = −0.24 to −0.95 eV). Additionally,
for the defective Zn<sub>2</sub>GeO<sub>4</sub> surfaces, the oxygen
vacancies are the active sites. CO<sub>2</sub> that adsorbs directly
at the Vo site can be dissociated into CO and O and the Vo defect
can be healed by the oxygen atom released during the dissociation
process. On further analysis of the dissociative adsorption mechanism
of CO<sub>2</sub> on the surface oxygen defect site, we concluded
that dissociative adsorption of CO<sub>2</sub> favors the stepwise
dissociation mechanism and the dissociation process can be described
as CO<sub>2</sub> + Vo → CO<sub>2</sub><sup>δ−</sup>/Vo → CO<sub>adsorbed</sub> + O<sub>surface</sub>. This result
has an important implication for understanding the photoreduction
of CO<sub>2</sub> by using Zn<sub>2</sub>GeO<sub>4</sub> nanoribbons
A Theoretical Study of Water Adsorption and Decomposition on Low-Index Spinel ZnGa<sub>2</sub>O<sub>4</sub> Surfaces: Correlation between Surface Structure and Photocatalytic Properties
Water
adsorption and decomposition on stoichiometrically perfect and oxygen
vacancy containing ZnGa<sub>2</sub>O<sub>4</sub> (100), (110), and
(111) surfaces were investigated through periodic density functional
theory (DFT) calculations. The results demonstrated that water adsorption
and decomposition are surface-structure-sensitive processes. On a
stoichiometrically perfect surface, the most stable molecular adsorption
that could take place involved the generation of hydrogen bonds. For
dissociative adsorption, the adsorption energy of the (111) surface
was more than 4 times the energies of the other two surfaces, indicating
it to be the best surface for water decomposition. A detailed comparison
of these three surfaces showed that the primary reason for this observation
was the special electronic state of the (111) surface. When water
dissociated on the (111) surface, the special Ga<sub>3c</sub>-4s and
4p hybridization states at the Fermi level had an obvious downshift
to the lower energies. This large energy gain greatly promoted the
dissociation of water. Because the generation of O<sub>3c</sub> vacancy
defects on the (100) and (110) surfaces could increase the stability
of the dissociative adsorption states with few changes to the energy
barrier, this type of defect would make the decomposition of water
molecules more favorable. However, for the (111) surface, the generation
of vacancy defects could decrease the stability of the dissociative
adsorption states and significantly increase their energy barriers.
Therefore, the decomposition of water molecules on the oxygen vacancy
defective (111) surface would be less favorable than the perfect (111)
surface. These findings on the decomposition of H<sub>2</sub>O on
the ZnGa<sub>2</sub>O<sub>4</sub> surfaces can be used toward the
synthesis of water-splitting catalysts