Burnout and study engagement among medical students at Sun Yat-sen University, China: A cross-sectional study.

This study aims to investigate burnout and study engagement among medical students at Sun Yat-sen University, China.A cross-sectional survey was conducted among undergraduate medical students of Sun Yat-sen University, China. A total of 453 undergraduate students completed a self-administered, structured questionnaire between January and February, 2016. Burnout and study engagement were measured using the Maslach Burnout Inventory-Student Survey (MBI-SS) and the UTRECHT Work Engagement Scale-Students (UWES-S), respectively. Subjects who scored high in emotional exhaustion subscale, high in cynicism subscale, and low in professional efficacy subscale simultaneously were graded as having high risk of burnout. Independent sample t tests and chi-square tests were used to compare the differences in burnout and work engagement between genders, majors, and grade levels.The means (standard deviations) of the MBI-SS subscales were 3.42 (1.45) for emotional exhaustion, 2.34 (1.64) for cynicism, and 3.04 (1.30) for professional efficacy. The means (standard deviations) of the UWES-S subscales were 3.13 (1.49) for vigor, 3.44 (1.47) for dedication and 3.00 (1.51) for absorption. Approximately 1 in 11 students experienced a high risk of burnout. There were no statistically significant gender differences in burnout and study engagement. There were also no statistically significant differences in burnout and study engagement subscales according to student major. Students in higher grades displayed increased burnout risk, higher mean burnout subscale score of cynicism, lower mean burnout subscale score of professional efficacy, and decreased mean study engagement subscale scores of dedication and absorption. There were strong correlations within study engagement subscales.Chinese medical students in this university experience a high level of burnout. Students at higher-grade level experience more burnout and decreased study engagement compared with students in lower level

Power of Information Channels: Participation in e-Government Discourse

This study examines the collective use of the electronic information and communication channels and their impact on citizen participation for public discourse. Using both quantitative and qualitative research methods, we investigate public communication channels available for government service provision in a large metropolis in China. Specifically, four electronic communication channels are analyzed to assess the impacts of diverse dimensions for electronic participation from citizens to governmental discourse. Upon completion, the study will provide a useful framework with insights for both researchers and practitioners in the power of electronic information and communication channels in electronic participation in the public discourse

Zeeman effect in centrosymmetric antiferromagnets controlled by an electric field

Centrosymmetric antiferromagnetic semiconductors, although abundant in nature, seem less promising than ferromagnets and ferroelectrics for practical applications in semiconductor spintronics. As a matter of fact, the lack of spontaneous polarization and magnetization hinders the efficient utilization of electronic spin in these materials. Here, we propose a paradigm to harness electronic spin in centrosymmetric antiferromagnets via Zeeman spin splittings of electronic energy levels -- termed as spin Zeeman effect -- which is controlled by electric field.By symmetry analysis, we identify twenty-one centrosymmetric antiferromagnetic point groups that accommodate such a spin Zeeman effect. We further predict by first-principles that two antiferromagnetic semiconductors, Fe$_2$TeO$_6$ and SrFe$_2$S$_2$O, are excellent candidates showcasing Zeeman splittings as large as $\sim$55 and $\sim$30 meV, respectively, induced by an electric field of 6 MV/cm. Moreover, the electronic spin magnetization associated to the splitting energy levels can be switched by reversing the electric field. Our work thus sheds light on the electric-field control of electronic spin in antiferromagnets, which broadens the scope of application of centrosymmetric antiferromagnetic semiconductors

Engineering ferroelectricity in monoclinic hafnia

Ferroelectricity in the complementary metal-oxide semiconductor (CMOS)-compatible hafnia (HfO$_2$) is crucial for the fabrication of high-integration nonvolatile memory devices. However, the capture of ferroelectricity in HfO$_2$ requires the stabilization of thermodynamically-metastable orthorhombic or rhombohedral phases, which entails the introduction of defects (e.g., dopants and vacancies) and pays the price of crystal imperfections, causing unpleasant wake-up and fatigue effects. Here, we report a theoretical strategy on the realization of robust ferroelectricity in HfO$_2$-based ferroelectrics by designing a series of epitaxial (HfO$_2$)$_1$/(CeO$_2$)$_1$ superlattices. The advantages of the designated ferroelectric superlattices are defects free, and most importantly, on the base of the thermodynamically stable monoclinic phase of HfO$_2$. Consequently, this allows the creation of superior ferroelectric properties with an electric polarization $>$25 $\mu$C/cm$^2$ and an ultralow polarization-switching energy barrier at $\sim$2.5 meV/atom. Our work may open an entirely new route towards the fabrication of high-performance HfO$_2$ based ferroelectric devices