Monitoring parasitic abundance in cage-based aquaculture : the effects of clustering

Most discussions of sampling protocols within the literature on monitoring aquatic parasites are based on the assumptions of simple random sampling. There has been a growing recognition within the fields of human and terrestrial veterinary epidemiology that data are often collected from individuals within clusters where such assumptions are not valid. These circumstances arise when monitoring ectoparasitic sea lice on Scottish salmon farms. In previous work the authors have demonstrated that significant intraclass correlation coefficients (ICC) values are associated with cage-level abundance of sea lice, particularly when the parasite reaches its adult stage of development. In this paper two sets of data from Scottish farms with ICC values for adult L. salmonis of 0.35 [0.08-0.72, 95%CI] and for adult C. elongatus of 0.42 [0.14-0.66, 95%CI] are used to investigate the implications of clustering. A Monte Carlo simulation approach is used to illustrate the effect of various sampling approaches. The protocols simulated reflect those typically used across a range of countries and production environments in which salmon are currently reared. By illustrating clearly from empirical data sets what is known by theoretical argument it is hoped that guidelines for sampling parasites, and disease monitoring more generally, within aquaculture will in future incorporate appropriate consideration of issues related to the clustering that is typically present in cage-based production systems

Influence of the Soret effect on convection of binary fluids

Convection in horizontal layers of binary fluids heated from below and in particular the influence of the Soret effect on the bifurcation properties of extended stationary and traveling patterns that occur for negative Soret coupling is investigated theoretically. The fixed points corresponding to these two convection structures are determined for realistic boundary conditions with a many mode Galerkin scheme for temperature and concentration and an accurate one mode truncation of the velocity field. This solution procedure yields the stable and unstable solutions for all stationary and traveling patterns so that complete phase diagrams for the different convection types in typical binary liquid mixtures can easily be computed. Also the transition from weakly to strongly nonlinear states can be analyzed in detail. An investigation of the concentration current and of the relevance of its constituents shows the way for a simplification of the mode representation of temperature and concentration field as well as for an analytically manageable few mode description.Comment: 30 pages, 12 figure

Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)

International audienceWe show the role played by the buffer surface morphology and by alloying effects on the size, shape and lateral distribution of InAs nanostructures grown on InP001 substrates by molecular beam epitaxy. Three buffers, viz., In 0.53 Ga 0.47 As, In 0.52 Al 0.48 As, and InP lattice matched on InP have been studied. Differences in nanostructure morphology and in carrier confinement have been evaluated by atomic force microscopy and by low-temperature photoluminescence measurements, respectively. Alongside the classical relaxation mode through two-dimensional/three-dimensional surface morphology change, a chemical relaxation mode has to be introduced as a competitive mode of relaxation of strained layers. This chemical relaxation mode, due to alloying between the InAs deposit and the buffer, is thought to be responsible for most of the observed differences in the InAs nanostructure properties

High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach

International audienceThin and thick fully relaxed In 0.65 Ga 0.35 As layers have been grown on InP substrates 0.81% misfit, with high structural and high optoelectronic quality at an operating wavelength of 2.0 m. Full relaxation is achieved, using the paramorphic approach, by growing the In 0.65 Ga 0.35 As layers lattice matched to an InAs 0.25 P 0.75 seed membrane of predetermined lattice parameter. The InAs 0.25 P 0.75 layer was originally grown pseudomorphically strained on the InP substrate before being separated and elastically relaxed using surface micromachining

Measurement of the extent of strain relief in InGaAs layers grown under tensile strain on InP(100) substrates

International audienceHigh resolution x‐ray diffraction has been used to investigate the structural properties of InxGa1−xAs epitaxial layers grown under tension on InP(100) substrates. The nominal indium composition (x=0.42) corresponds to a small lattice mismatch and a two dimensional growth mode. We have also included for comparison two samples grown under compression covering the mostly strained and the mostly relaxed regimes. Our results show that the residual strain and the asymmetry in strain relaxation along 〈011〉 directions are always larger for layers under tension. This can be explained by the difference in dislocation glide velocity induced by a different indium content, by the dissociation of perfect dislocations and partially by the difference in thermal expansion coefficients between substrate and epilayer. The larger asymmetry in strain relaxation for tensile strain layers is interpreted by the existence of microcracks aligned in the [011] direction

High-quality highly strained InGaAs quantum wells grown on InP using (InAs)n(GaAs)0.25 fractional monolayer superlattices

International audience(InAs) n /(GaAs) m n1.5-2, m0.25 monolayer fractional monolayer superlattices FMS have been used to grow highly strained InGaAs quantum wells QWs on InP by molecular beam epitaxy. We show that FMS quantum wells have better structural and optoelectronic properties compared to equivalent QWs grown using standard procedures. In addition, the onsets of the three-dimensional growth mode and plastic relaxation are delayed, which allows the highest emission wavelength in the In x Ga 1x As/InGaAlAs/InP system to be extended up to 2.35 m at high growth temperatures 500 °C

Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)

International audienceInAs nanostructures were grown on In 0.52 Al 0.48 As alloy lattice matched on InP001 substrates by molecular beam epitaxy using specific growth parameters in order to improve island self-organization. We show how the change in InAs surface reconstruction via growth temperature from (24) to (21) and/or the use of InAlAs initial buffer surface treatments improve the island shape homogeneity either as quantum wires or as quantum dots. Differences in island shape and in carrier confinement are shown by atomic force microscopy and by photoluminescence measurements, respectively. We point out that such shape amendments induce drastic improvements to island size distribution and discernible changes in photoluminescence properties, in particular concerning polarization

Phase 1 study of sirolimus in combination with oral cyclophosphamide and topotecan in children and young adults with relapsed and refractory solid tumors.

PurposeTo determine the maximum tolerated dose (MTD), toxicities, and pharmacodynamics effects of sirolimus combined with oral metronomic topotecan and cyclophosphamide in a pediatric population.Materials and methodsPatients who were 1 to 30 years of age with relapsed/refractory solid tumors (including CNS) were eligible. Patients received daily oral sirolimus and cyclophosphamide (25-50 mg/m2/dose) on days 1-21 and oral topotecan (0.8 mg/m2/dose) on days 1-14 in 28-day cycles. Sirolimus steady-state plasma trough concentrations of 3-7.9 ng/mL and 8-12.0 ng/mL were evaluated, with dose escalation based on a 3+3 phase 1 design. Biomarkers of angiogenesis were also evaluated.ResultsTwenty-one patients were treated (median age 18 years; range 9-30). Dose-limiting toxicities included myelosuppression, ALT elevation, stomatitis, and hypertriglyceridemia. The MTD was sirolimus with trough goal of 8-12.0 ng/mL; cyclophosphamide 25 mg/m2/dose; and topotecan 0.8 mg/m2/dose. No objective responses were observed. Four patients had prolonged stable disease > 4 cycles (range 4-12). Correlative biomarker analyses demonstrated reductions in thrombospondin-1 (p=0.043) and soluble vascular endothelial growth factor receptor-2 plasma concentrations at 21 days compared to baseline.ConclusionsThe combination of oral sirolimus, topotecan, and cyclophosphamide was well tolerated and biomarker studies demonstrated modulation of angiogenic pathways with this regimen

Evidence for the formation of two phases during the growth of SrTiO3 on silicon

International audienceEpitaxial SrTiO3 (STO)/Si templates open a unique opportunity for the integration of ferroelectric oxides, such as BaTiO3 on silicon and for the realization of new devices exploiting ferroelectricity. STO itself has been shown as ferroelectric at room temperature when deposited in thin layers on Si, while bulk STO is tetragonal and, thus, ferroelectric below 105 K. Here, we demonstrate the coexistence, at room temperature, of strained cubic and tetragonal phases in thin STO/Si layers. The tetragonal STO phase presents a pronounced tetragonality for thicknesses up to 24 ML. Above this thickness, the strained cubic STO phase starts relaxing while the tetragonal STO phase progressively transits to cubic STO. The origin of the simultaneous formation of these two phases is analyzed and is attributed to oxygen segregation at the early stages of the growth