Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon

Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical methods to compute donor wave functions is dependent on descriptions of central-cell-corrections, which are empirically fitted to match experimental binding energies, or other quantities associated with the global properties of the wave function. Direct approaches to understanding such effects in donor wave functions are of great interest. Here, we apply a comprehensive atomistic theoretical framework to compute scanning tunnelling microscopy (STM) images of subsurface donor wave functions with two central-cell-correction formalisms previously employed in the literature. The comparison between central-cell models based on real-space image features and the Fourier transform profiles indicate that the central-cell effects are visible in the simulated STM images up to ten monolayers below the silicon surface. Our study motivates a future experimental investigation of the central-cell effects via STM imaging technique with potential of fine tuning theoretical models, which could play a vital role in the design of donor-based quantum systems in scalable quantum computer architectures.Comment: Nanoscale 201

Scheme for direct measurement of a general two-qubit Hamiltonian

The construction of two-qubit gates appropriate for universal quantum computation is of enormous importance to quantum information processing. Building such gates is dependent on accurate knowledge of the interaction dynamics between two qubit systems. This letter will present a systematic method for reconstructing the full two-qubit interaction Hamiltonian through experimental measures of concurrence. This not only gives a convenient method for constructing two qubit quantum gates, but can also be used to experimentally determine various Hamiltonian parameters in physical systems. We show explicitly how this method can be employed to determine the first and second order spin-orbit corrections to the exchange coupling in quantum dots.Comment: 4 Pages, 1 Figur

Quantum gate for Q switching in monolithic photonic bandgap cavities containing two-level atoms

Photonic bandgap cavities are prime solid-state systems to investigate light-matter interactions in the strong coupling regime. However, as the cavity is defined by the geometry of the periodic dielectric pattern, cavity control in a monolithic structure can be problematic. Thus, either the state coherence is limited by the read-out channel, or in a high Q cavity, it is nearly decoupled from the external world, making measurement of the state extremely challenging. We present here a method for ameliorating these difficulties by using a coupled cavity arrangement, where one cavity acts as a switch for the other cavity, tuned by control of the atomic transition.Comment: 6 pages, 5 figures, 1 tabl

Sensing of Fluctuating Nanoscale Magnetic Fields Using NV Centres in Diamond

New magnetometry techniques based on Nitrogen-Vacancy (NV) defects in diamond allow for the imaging of static (DC) and oscillatory (AC) nanoscopic magnetic systems. However, these techniques require accurate knowledge and control of the sample dynamics, and are thus limited in their ability to image fields arising from rapidly fluctuating (FC) environments. We show here that FC fields place restrictions on the DC field sensitivity of an NV qubit magnetometer, and that by probing the dephasing rate of the qubit in a magnetic FC environment, we are able to measure fluctuation rates and RMS field strengths that would be otherwise inaccessible with the use of DC and AC magnetometry techniques. FC sensitivities are shown to be comparable to those of AC fields, whilst requiring no additional experimental overheads or control over the sample.Comment: 5 pages, 4 figure