1 research outputs found
Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc–Tin–Oxide with Various Cation Compositions
We
present electrical properties of Schottky barrier diodes on
room-temperature deposited amorphous zinc–tin–oxide
(ZTO) with Zn/(Zn + Sn) contents between 0.12 and 0.72. A combinatorial
approach with continuous composition spread pulsed laser deposition
is used to achieve the wide range of compositions with four samples
each on 50 Ă— 50 mm<sup>2</sup> glass substrates. The Schottky
barrier contacts were fabricated by the reactive direct-current sputtering
of platinum. Best diode properties (rectification ratio <i>S</i><sub>V</sub> = 2.7 × 10<sup>7</sup>, ideality factor η
= 1.05, and effective barrier height Ď•<sub>B,eff</sub> = 1.25
eV) are obtained for a composition of 0.63 Zn/(Zn + Sn). Aging on
the timescale of days and months is observed that leads to improved
device properties (higher rectifications and lower ideality factors).
In particular, the diodes with the lowest performance in the as-prepared
state show the biggest improvements. The best diode properties after
the aging process (<i>S</i><sub>V</sub> = 3.9 × 10<sup>7</sup>, η = 1.12, and ϕ<sub>B,eff</sub> = 1.31 eV) were
also observed for 0.63 Zn/(Zn + Sn)