Generation of 1180 Å period gratings with a Xe ion laser

Holographic lithography with the 2315 Å line of a xenon ion laser is used to produce gratings in polymethylmethacrylate. An 1180 Å period grating is made and examined with a scanning electron microscope (SEM). This grating period is appropriate for use as a first-order grating with a GaAs distributed feedback laser

A system and methodologies for absolute QE measurements from the vacuum ultraviolet through the NIR

In this paper we present our system design and methodology for making absolute quantum efficiency (QE) measurements through the vacuum ultraviolet (VUV) and verify the system with delta-doped silicon CCDs. Delta-doped detectors provide an excellent platform to validate measurements through the VUV due to their enhanced UV response. The requirements for measuring QE through the VUV are more strenuous than measurements in the near UV and necessitate, among other things, the use of a vacuum monochromator, good dewar chamber vacuum to prevent on-chip condensation, and more stringent handling requirements.Comment: The following article has been submitted to/accepted by the Review of Scientific Instruments. After it is published, it will be found at http://rsi.aip.org

Studies of jet production rates in e + e − annihilation at E cm =29 GeV

Production rates of multijet hadronic final states are studied in e + e − annihilation at 29 GeV center of mass energy. QCD shower model calculations with exact first order matrix element weighting at the first gluon vertex are capable of reproducing the observed multijet event rates over a large range of jet pair masses. The method used to reconstruct jets is well suited for directly comparing experimental jet rates with parton rates calculated in perturbative QCD. Evidence for the energy dependene of α s is obtained by comparing the observed production rates of 3-jet events with results of similar studies performed at higher center of mass energies.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/47886/1/10052_2005_Article_BF01506527.pd

High Throughput, High Yield Fabrication of High Quantum Efficiency Back-Illuminated Photon Counting, Far UV, UV, and Visible Detector Arrays

In this paper we discuss the high throughput end-to-end post fabrication processing of high performance delta-doped and superlattice-doped silicon imagers for UV, visible, and NIR applications. As an example, we present our results on far ultraviolet and ultraviolet quantum efficiency (QE) in a photon counting, detector array. We have improved the QE by nearly an order of magnitude over microchannel plates (MCPs) that are the state-of-the-art UV detectors for many NASA space missions as well as defense applications. These achievements are made possible by precision interface band engineering of Molecular Beam Epitaxy (MBE) and Atomic Layer Deposition (ALD)

The DUV Stability of Superlattice-Doped CMOS Detector Arrays

JPL and Alacron have recently developed a high performance, DUV camera with a superlattice doped CMOS imaging detector. Supperlattice doped detectors achieve nearly 100% internal quantum efficiency in the deep and far ultraviolet, and a single layer, Al2O3 antireflection coating enables 64% external quantum efficiency at 263nm. In lifetime tests performed at Applied Materials using 263 nm pulsed, solid state and 193 nm pulsed excimer laser, the quantum efficiency and dark current of the JPL/Alacron camera remained stable to better than 1% precision during long-term exposure to several billion laser pulses, with no measurable degradation, no blooming and no image memory at 1000 fps

Enabling High Performance Instruments for Astronomy and Space Exploration and ALD

Benefits of ALD for NASA instruments and applications: a) Ultrathin, highly conformal, and uniform films over arbitrarily large surface area. b). High quality films (density, roughness, conductivity, etc.) . Angstrom level control of stoichiometry, interfaces, and surface properties: 1) Multilayer nanolaminates/nanocomposites. 2) Low temperature surface engineering. Flight applications enabled by ALD: a) Anti-reflective coatings/Mirrors/Filters/Optics for UV/Vis/NIR Detectors. b) Superconducting Films for Submillimeter Astronomy

Atomically Precise Surface and Interface Engineering via Atomic Layer Deposition to Enable High-Performance Materials, Detectors, and Instruments

No abstract availabl