Epitaxial Growth of Ge on Si by Magnetron Sputtering

Epitaxial growth of Ge on Si has received considerable attention for its compatibility with Si process flow and the scarcity of Ge compared with Si. Applications that drive the efforts for integrating Ge with Si include high mobility channel in metal-oxide-semiconductor field-effect transistors, infrared photodetector in Si-based optical devices, and template for III-V growth to fabricate high-efficiency solar cells. Epitaxy Ge on Si can be used as a virtual Ge substrate for fabrication of III-V solar cells, which has advantages of superior mechanical properties and low cost over Ge wafers. This work investigates the epitaxial growth of Ge on Si using magnetron sputtering, which is an environment-friendly, inexpensive, high throughput, and simple deposition technique. The effects of substrate temperature on the properties of Ge are analyzed. A novel method to epitaxially grow Ge on Si by magnetron sputtering at low temperature is developed using one-step aluminum-assisted crystallization. By applying an in-situ low temperature (50–150°C) heat treatment in between Al and Ge sputter depositions, the epitaxial growth of Ge on Si is achieved. This method significantly lowers the required temperature for and therefore the cost of epitaxial growth of Ge on Si

Surface Saturation Current Densities of Perovskite Thin Films from Suns-Photoluminescence Quantum Yield Measurements

We present a simple, yet powerful analysis of Suns-photoluminescence quantum yield measurements that can be used to determine the surface saturation current densities of thin film semiconductors. We apply the method to state-of-the-art polycrystalline perovskite thin films of varying absorber thickness. We show that the non-radiative bimolecular recombination in these samples originates from the surfaces. To the best of our knowledge, this is the first study to demonstrate and quantify non-linear (bimolecular) surface recombination in perovskite thin films

Decoupling Bimolecular Recombination Mechanisms in Perovskite Thin Films Using Photoluminescence Quantum Yield

We present a novel analytical model for analysing the spectral photoluminescence quantum yield of non-planar semiconductor thin films. This model considers the escape probability of luminescence and is applied to triple-cation perovskite thin films with a 1-Sun photoluminescence quantum yield approaching 25%. By using our model, we can decouple the internal radiative, external radiative, and non-radiative bi-molecular recombination coefficients. Unlike other techniques that measure these coefficients separately, our proposed method circumvents experimental uncertainties by avoiding the need for multiple photoluminescence measurement techniques. We validate our model by comparing the extracted implied open-circuit voltage, effective luminescence escape probabilities, absorptivity, and absorption coefficient with values obtained using established methods and found that our results are consistent with previous findings. Next, we compare the implied 1-Sun radiative open-circuit voltage and radiative recombination current obtained from our method with literature values. We then convert the implied open-circuit voltage and implied radiative open-circuit voltage to the injection-dependent apparent-effective and apparent-radiative carrier lifetimes, which allow us to decouple the different recombination coefficients. Using this lifetime analysis, we predict the efficiency losses due to each recombination mechanism. Finally, by comparing several different thicknesses, we conclude that the non-radiative bimolecular recombination is likely caused by surface recombination. Our proposed analytical model provides a reliable method for analysing the spectral photoluminescence quantum yield of semiconductor thin films, which will facilitate further research into the photovoltaic properties of these materials.Comment: Main text: 11 figures, 7 tables Supplemental Material: 42 figures, 7 table

Decoupling Bimolecular Recombination Mechanisms in Perovskite Thin Films Using Photoluminescence Quantum Yield

We present a novel analytical model for analysing the spectral photoluminescence quantum yield of non-planar semiconductor thin films. This model considers the escape probability of luminescence and is applied to triple-cation perovskite thin films with a 1-Sun photoluminescence quantum yield approaching 25%. By using our model, we can decouple the internal radiative, external radiative, and non-radiative bi-molecular recombination coefficients. Unlike other techniques that measure these coefficients separately, our proposed method circumvents experimental uncertainties by avoiding the need for multiple photoluminescence measurement techniques. We validate our model by comparing the extracted implied open-circuit voltage, effective luminescence escape probabilities, absorptivity, and absorption coefficient with values obtained using established methods and found that our results are consistent with previous findings. Next, we compare the implied 1-Sun radiative open-circuit voltage and radiative recombination current obtained from our method with literature values. We then convert the implied open-circuit voltage and implied radiative open-circuit voltage to the injection-dependent apparent-effective and apparent-radiative carrier lifetimes, which allow us to decouple the different recombination coefficients. Using this lifetime analysis, we predict the efficiency losses due to each recombination mechanism. Our proposed analytical model provides a reliable method for analysing the spectral photoluminescence quantum yield of semiconductor thin films, which will facilitate further research into the photovoltaic properties of these materials

Implied Open‐circuit Voltage Imaging via a Single Bandpass Filter Method—Its First Application in Perovskite Solar Cells

A novel, camera-based method for direct implied open-circuit voltage (iV$_{OC}$) imaging via the use of a single bandpass filter (s-BPF) is developed for large-area photovoltaic solar cells and precursors. The photoluminescence (PL) emission is imaged using a narrow BPF with centre energy inside the high-energy tail of the PL emission, utilising the close-to-unity and nearly constant absorptivity of typical photovoltaic devices in this energy range. As a result, the exact value of the sample\u27s absorptivity within the BPF transmission band is not required. The use of an s-BPF enables a fully contactless approach to calibrate the absolute PL photon flux for spectrally integrated detectors, including cameras. The method eliminates the need for knowledge of the imaging system spectral response. Through an appropriate choice of the BPF centre energy, a range of absorber compositions or a single absorber with different surface morphologies, such as planar and textured, can be imaged, all without the need for additional detection optics. The feasibility of this s-BPF method is first validated. The relative error in iV$_{OC}$ is determined to be ≤1.5%. The method is then demonstrated on device stacks with two different perovskite compositions commonly used in single-junction and monolithic tandem solar cells

Implied Open‐circuit Voltage Imaging via a Single Bandpass Filter Method—Its First Application in Perovskite Solar Cells

A direct, camera-based implied open-circuit voltage (iVOC) imaging method via the novel use of a single bandpass filter (s-BPF) is developed for large-area photovoltaic solar cells and solar cell precursors. This method images the photoluminescence (PL) emission using a narrow BPF with centre energy in the high-energy tail of the PL emission taking advantage of the close-to-unity absorptivity of typical photovoltaic devices with low variability in this energy range. As a result, the exact value of the sample\u27s absorptivity within the BPF transmission band is not required. The use of a s-BPF enables the adaptation of a fully contactless approach to calibrate the absolute PL photon flux for camera-based spectrally-integrated imaging tools. The method eliminates the need for knowledge of the imaging system spectral response and the use of the emission and excitation spectral shapes. Through an appropriate choice of the BPF centre energy, a range of absorber compositions or a single absorber with different surface morphologies (e.g., planar vs textured) can be imaged, all without the need for additional detection optics. The feasibility of this s-BPF method is first assessed using a high-quality Cs$_{0.05}$FA$_{0.79}$MA$_{0.16}$Pb(I$_{0.83}$Br$_{0.17}$)$_3$ perovskite neat film. The error in iVOC is determined to be less than 1.5%. The efficacy of the method is then demonstrated on device stacks with two different perovskite compositions commonly used in single-junction and monolithic tandem solar cells

Elucidating Mechanisms behind Ambient Storage-Induced Efficiency Improvements in Perovskite Solar Cells

ペロブスカイト太陽電池の常温熟成機構の解明. 京都大学プレスリリース. 2021-02-17.Initial improvement in power conversion efficiency (PCE) during ambient storage is often seen in perovskite solar cells (PSCs). In this work, we studied the origin of PCE enhancement by ambient storage on typical n-i-p PSCs. We found improvements in both fill factor and open-circuit voltage during the first 2 days of storage. By analyzing temperature and light intensity-dependent VOC, we found that the charge recombination mechanism changed from surface- to bulk-dominated because of defect passivation at the perovskite surface upon storage. In addition, we found that storage improves the conductivity and lowers the highest occupied molecular orbital level of the spiro-OMeTAD, improving charge extraction. These results show that there is more than one factor causing the storage-induced improvements in perovskite solar cells

Understanding the impact of SAM Fermi levels on high efficiency p-i-n perovskite solar cells

Completing the picture of the underlying physics of perovskite solar cell interfaces that incorporate self-assembled molecular layers (SAMs) will accelerate further progress in p-i-n devices. In this work, we modified the Fermi level of a nickel oxide–perovskite interface by utilizing SAM layers with a range of dipole strengths to establish the link between the resulting shift of the built-in potential of the solar cell and the device parameters. To achieve this, we fabricated a series of high-efficiency perovskite solar cells with no hysteresis and characterized them through stabilize and pulse (SaP), JV curve, and time-resolved photoluminescence (TRPL) measurements. Our results unambiguously show that the potential drop across the perovskite layer (in the range of 0.6–1 V) exceeds the work function difference at the device’s electrodes. These extracted potential drop values directly correlate to work function differences in the adjacent transport layers, thus demonstrating that their Fermi level difference entirely drives the built-in potential in this device configuration. Additionally, we find that selecting a SAM with a deep HOMO level can result in charge accumulation at the interface, leading to reduced current flow. Our findings provide insights into the device physics of p-i-n perovskite solar cells, highlighting the importance of interfacial energetics on device performance

The CUAVA-2 CubeSat: A Second Attempt to Fly the Remote Sensing, Space Weather Study and Earth Observation Instruments

This paper presents the 6U CubeSat mission conducted by the ARC Training Centre for CubeSats, UAVs, and their Applications (CUAVA) at the University of Sydney. CUAVA-2, the second CubeSat project following the CUAVA-1 mission, builds upon lessons learned from its predecessor. CUAVA-1, the first satellite launched by CUAVA, carried first-generation payloads for earth observation goals and technology demonstrations but experienced communication difficulties. A fault root analysis was performed on CUAVA-1 to inform the design of CUAVA-2. The CUAVA-2 satellite incorporates a hyperspectral imager for applications in agriculture, forestry, coastal and marine environments, urban areas, water hazard assessment, and mineral exploration. It also includes a GPS reflectometry payload for remote sea state determination, as well as secondary payloads for technology demonstration and space weather study. This paper discusses the fault analysis findings, lessons learned, and design inputs from CUAVA-1, showcasing their integration into the CUAVA-2 satellite, which is scheduled for launch in February 2024

Bulk Incorporation with 4‐Methylphenethylammonium Chloride for Efficient and Stable Methylammonium‐Free Perovskite and Perovskite‐Silicon Tandem Solar Cells

Methylammonium (MA)-free perovskite solar cells have the potential for better thermal stability than their MA-containing counterparts. However, the efficiency of MA-free perovskite solar cells lags behind due to inferior bulk quality. In this work, 4-methylphenethylammonium chloride (4M-PEACl) is added into a MA-free perovskite precursor, which results in greatly enhanced bulk quality. The perovskite crystal grains are significantly enlarged, and defects are suppressed by a factor of four upon the incorporation of an optimal concentration of 4M-PEACl. Quasi-2D perovskites are formed and passivate defects at the grain boundaries of the perovskite crystals. Furthermore, the perovskite surface chemistry is modified, resulting in surface energies more favorable for hole extraction. This facile approach leads to a steady state efficiency of 23.7% (24.2% in reverse scan, 23.0% in forward scan) for MA-free perovskite solar cells. The devices also show excellent light stability, retaining more than 93% of the initial efficiency after 1000 h of constant illumination in a nitrogen environment. In addition, a four-terminal mechanically stacked perovskite-silicon tandem solar cell with champion efficiency of 30.3% is obtained using this MA-free composition. The encapsulated tandem devices show excellent operational stability, retaining more than 98% of the initial performance after 42 day/night cycles in an ambient atmosphere