492 research outputs found

    Strength-enhanced Sn–In low-temperature alloy with surface-modified ZrO₂ nanoparticle addition

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    Low-temperature packaging is essential for the widespread use of flexible electronic devices, and Sn–In eutectic alloys have attracted considerable attention because of their low melting temperatures. However, these alloys have a lower strength compared with other types of solder alloys. This study aimed to investigate the effect of adding nanoparticles on the mechanical strength of Sn–In eutectic alloys while keeping their melting temperature unchanged. ZrO₂ nanoparticles coated with NiO (NiO/ZrO₂ nanoparticles) were utilized to strengthen Sn–In eutectic alloys with a high dispersity. Sn–In composite alloys reinforced with NiO/ZrO₂ nanoparticles were fabricated, and tensile strength evaluation and microstructure observations were conducted. The experimental results showed that the addition of nanoparticles to the Sn–In eutectic alloys did not change their melting behavior. The tensile strength of the Sn–In composite alloys reinforced with NiO/ZrO₂ nanoparticles increased by up to 35.6%, which was attributed to grain refinement and dispersion strengthening. Even after thermal aging at 60 ºC, the Sn–In composite alloys reinforced with NiO/ZrO₂ nanoparticles showed a 1.11 times higher ultimate tensile strength than that of the non-aged, non-reinforced eutectic alloy, despite grain coarsening. This was attributed to the contribution of dispersion strengthening. These results indicate that the addition of NiO/ZrO₂ nanoparticles is an effective method to improve the strength of low-melting-temperature alloys.The version of record of this article, first published in Journal of Materials Science: Materials in Electronics, is available online at Publisher’s website: https://doi.org/10.1007/s10854-023-11344-

    Structure Analysis of Histidine Decarboxylase in Complex with Inhibitors

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    Effect of exchange interaction on fidelity of quantum state transfer from a photon qubit to an electron-spin qubit

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    We analyzed the fidelity of the quantum state transfer (QST) from a photon-polarization qubit to an electron-spin-polarization qubit in a semiconductor quantum dot, with special attention to the exchange interaction between the electron and the simultaneously created hole. In order to realize a high-fidelity QST we had to separate the electron and hole as soon as possible, since the electron-hole exchange interaction modifies the orientation of the electron spin. Thus, we propose a double-dot structure to separate the electron and hole quickly, and show that the fidelity of the QST can reach as high as 0.996 if the resonant tunneling condition is satisfied.Comment: 5 pages, 4 figures, to be published in Phys. Rev. B Rapid Communication
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