647 research outputs found
Fermi surface and superconductivity in low-density high-mobility {\delta}-doped SrTiO3
The electronic structure of low-density n-type SrTiO3 delta-doped
heterostructures is investigated by angular dependent Shubnikov-de Haas
oscillations. In addition to a controllable crossover from a three- to
two-dimensional Fermi surface, clear beating patterns for decreasing dopant
layer thicknesses are found. These indicate the lifting of the degeneracy of
the conduction band due to subband quantization in the two-dimensional limit.
Analysis of the temperature-dependent oscillations shows that similar effective
masses are found for all components, associated with the splitting of the light
electron pocket. The dimensionality crossover in the superconducting state is
found to be distinct from the normal state, resulting in a rich phase diagram
as a function of dopant layer thickness.Comment: 4 pages, 5 figures, submitted for publicatio
Coexistence of two- and three-dimensional Shubnikov-de Haas oscillations in Ar^+ -irradiated KTaO_3
We report the electron doping in the surface vicinity of KTaO_3 by inducing
oxygen-vacancies via Ar^+ -irradiation. The doped electrons have high mobility
(> 10^4 cm^2/Vs) at low temperatures, and exhibit Shubnikov-de Haas
oscillations with both two- and three-dimensional components. A disparity of
the extracted in-plane effective mass, compared to the bulk values, suggests
mixing of the orbital characters. Our observations demonstrate that Ar^+
-irradiation serves as a flexible tool to study low dimensional quantum
transport in 5d semiconducting oxides
Metal-to-insulator transition in anatase TiO2 thin films induced by growth rate modulation
We demonstrate control of the carrier density of single phase anatase TiO2
thin films by nearly two orders of magnitude by modulating the growth kinetics
during pulsed laser deposition, under fixed thermodynamic conditions. The
resistivity and the intensity of the photoluminescence spectra of these TiO2
samples, both of which correlate with the number of oxygen vacancies, are shown
to depend strongly on the growth rate. A quantitative model is used to explain
the carrier density changes.Comment: 13 pages 3 figure
Dominant mobility modulation by the electric field effect at the LaAlO_3 / SrTiO_3 interface
Caviglia et al. [Nature (London) 456, 624 (2008)] have found that the
superconducting LaAlO_3 / SrTiO_3 interface can be gate modulated. A central
issue is to determine the principal effect of the applied electric field. Using
magnetotransport studies of a gated structure, we find that the mobility
variation is almost five times as large as the sheet carrier density.
Furthermore, superconductivity can be suppressed at both positive and negative
gate bias. These results indicate that the relative disorder strength strongly
increases across the superconductor-insulator transition.Comment: 4 pages, 4 figure
PROPOSAL OF NEW K-FACTOR FUNCTION IN LIGHTNING IMPULSE TEST FOR ELECTRIC POWER EQUIPMENT
Ultra high voltage (UHV) systems are increasingly being planned and constructed, hence studies are promoted on the standard for high-voltage test techniques for UHV-class equipment. For the lightning impulse voltage test, a study is being conducted on the application of a method of evaluating the test waveform through conversion using the test voltage function (k-factor function) that was adopted in IEC 60060-1. The existing k-factor function was established based on the experimental results for more compact models, as compared with the insulating structure of UHV-class equipment, mainly with a breakdown voltage of about 100 kV. To determine whether this k-factor function can also be used for the test of UHV-class equipment, the experimental results for large-sized models were needed. In the present paper, to address this issue, the authors initially obtained k-factor values experimentally using the largest possible model (UHV model) assuming UHV-class equipment. Substantially, a study was conducted on a new k-factor function based on these experimental results. First, in the study, several ideas for the k-factor function were shown and applied to various waveforms to clarify their advantages and disadvantages. Next, in addition to these results, a study was conducted on a k-factor function suitable for UHV-class equipment with considering the actual UHV facilities. Consequently, it was concluded that the form of the function should be the same as that of the existing one but that it would be reasonable to adopt a relatively lower k-factor function for UHV-class equipment by revising the constant. Further, this new function could replace the existing one in 60060-1 for all voltage classes to consider the breakdown voltage ranges as a basis and LIWV (Lightning Impulse Withstand Voltage) values.20th International Symposium on High Voltage Engineering, August 28 - September 01, 2017, Buenos Aires, Argentin
Termination Control of the Interface Dipole in LaSrMnO/Nb:SrTiO (001) Schottky Junctions
In order to investigate the interface termination dependence of perovskite
band alignments, we have studied the Schottky barrier height at
LaSrMnO/Nb:SrTiO (001) heterointerfaces. As the
Nb:SrTiO semiconductor was varied from TiO termination to SrO
termination by variable insertion of a SrMnO layer, a large systematic
increase in the Schottky barrier height was observed. This can be ascribed to
the evolution of the interface dipole induced to screen the polar discontinuity
at the interface, which gives a large internal degree of freedom for tuning
band diagrams in oxides.Comment: 10 pages, 5 figure
Electric field penetration in Au/Nb:SrTiO3 Schottky junctions probed by bias-dependent internal photoemission
Intrinsic spin-orbit coupling in superconducting {\delta}-doped SrTiO3 heterostructures
We report the violation of the Pauli limit due to intrinsic spin-orbit
coupling in SrTiO3 heterostructures. Via selective doping down to a few
nanometers, a two-dimensional superconductor is formed, geometrically
suppressing orbital pair-breaking. The spin-orbit scattering is exposed by the
robust in-plane superconducting upper critical field, exceeding the Pauli limit
by a factor of 4. Transport scattering times several orders of magnitude higher
than for conventional thin film superconductors enables a new regime to be
entered, where spin-orbit coupling effects arise non-perturbatively.Comment: main text 4 pages with 4 figures, supplemental material 2 pages with
2 figure, submitted for publicatio
Rigorous Multicomponent Reactive Separations Modelling : Complete Consideration of Reaction-Diffusion Phenomena
This paper gives the first step of the development of a rigorous multicomponent reactive separation model. Such a model is highly essential to further the optimization of acid gases removal plants (CO2 capture, gas treating, etc.) in terms of size and energy consumption, since chemical solvents are conventionally used.Firstly, two main modelling approaches are presented: the equilibrium-based and the rate-based approaches. Secondly, an extended rate-based model with rigorous modelling methodology for diffusion-reaction phenomena is proposed. The film theory and the generalized Maxwell-Stefan equations are used in order to characterize multicomponent interactions. The complete chain of chemical reactions is taken into account. The reactions can be kinetically controlled or at chemical equilibrium, and they are considered for both liquid film and liquid bulk. Thirdly, the method of numerical resolution is described. Coupling the generalized Maxwell-Stefan equations with chemical equilibrium equations leads to a highly non-linear Differential-Algebraic Equations system known as DAE index 3. The set of equations is discretized with finite-differences as its integration by Gear method is complex. The resulting algebraic system is resolved by the Newton- Raphson method. Finally, the present model and the associated methods of numerical resolution are validated for the example of esterification of methanol. This archetype non-electrolytic system permits an interesting analysis of reaction impact on mass transfer, especially near the phase interface. The numerical resolution of the model by Newton-Raphson method gives good results in terms of calculation time and convergence. The simulations show that the impact of reactions at chemical equilibrium and that of kinetically controlled reactions with high kinetics on mass transfer is relatively similar. Moreover, the Fick’s law is less adapted for multicomponent mixtures where some abnormalities such as counter-diffusion take place
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