87 research outputs found
Charge writing at the LaAlO3/SrTiO3 surface
Biased conducting-tip atomic force microscopy (AFM) has been shown to write
and erase nanoscale metallic lines at the LaAlO3/SrTiO3 interface. Using
various AFM modes, we show the mechanism of conductivity switching is the
writing of surface charge. These charges are stably deposited on a wide range
of LaAlO3 thicknesses, including bulk crystals. A strong asymmetry with writing
polarity was found for 1 and 2 unit cells of LaAlO3, providing experimental
evidence for a theoretically predicted built-in potential.Comment: 12 pages, 4 figures, plus supplementary information, submitted to
Nano Letter
Termination Control of the Interface Dipole in LaSrMnO/Nb:SrTiO (001) Schottky Junctions
In order to investigate the interface termination dependence of perovskite
band alignments, we have studied the Schottky barrier height at
LaSrMnO/Nb:SrTiO (001) heterointerfaces. As the
Nb:SrTiO semiconductor was varied from TiO termination to SrO
termination by variable insertion of a SrMnO layer, a large systematic
increase in the Schottky barrier height was observed. This can be ascribed to
the evolution of the interface dipole induced to screen the polar discontinuity
at the interface, which gives a large internal degree of freedom for tuning
band diagrams in oxides.Comment: 10 pages, 5 figure
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