Environmental effects of road pavements stabilized with Class F fly ash

Published ArticleFly Ash is a residue generated by coal combustion and abundantly available, but due to potentially toxic elements found in Fly Ash, is considered harmful to the environment. The objective of this study is to evaluate the environmental effects of fly ash used as a stabilization agent in road pavement construction. Using laboratory-testing specimens of fly ashes namely, Kendal Dump Ash, Durapozz and Pozzfill, stabilized with classified G5 material and 1% AFRISAM and LAFARGE cement respectively and leach testing done to evaluate chemical leach properties over time and the harmful effects it has on the environment. Laboratory leaching sample results have indicated that Fly Ash constituents exhibit limited mobility. The study revealed that Fly Ash is an environmental option and has engineering advantages when used properly for soil stabilization techniques

Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels

Ge and III-V semiconductors are potential high performance channel materials for future CMOS devices. In this work, we have studied At. Layer Deposition (ALD) of high-k dielec. layers on Ge and GaAs substrates. We focus at the effect of the oxidant (H2O, O3, O2, O2 plasma) during gate stack formation. GeO2, obtained by Ge oxidn. in O2 or O3, is a promising passivation layer. The germanium oxide thickness can be scaled down below 1 nm, but such thin layers contain Ge in oxidn. states lower than 4+. Still, elec. results indicate that small amts. of Ge in oxidn. states lower than 4+ are not detrimental for device performance. Partial intermixing was obsd. for high-k dielec. and GeO2 or GaAsOx, suggesting possible correlations in the ALD growth mechanisms on Ge and GaAs substrates. [on SciFinder (R)

Being human and trust

“Trust” has become the buzzword of our decade, amongst other things, as a reaction to what is perceived as a trust crisis. This perception has a lot to do with a perception of not-being-in-control and a culture of suspicion. This leads to a yearning for a world where total control is possible and nobody thus needs to trust anybody else. We shall argue that this kind of world is conditioned by the earlier modern reductionist idea of a strong and disengaged self. We approach the nature of trust from a transcendental perspective by looking at some of the salient conditions for trust to exist, namely a lessened emphasis on a strong and disengaged self, our human condition of vulnerability and an inescapable engagement with a normative horizon. We shall argue that these conditions are not only the result of philosophical pondering but also insights that impress themselves in recent empirical research on trusthttp://studia.ubbcluj.ro/arhiva/cuprins_en.php?id_editie=655&serie=PHILOSOPHIA&nr=3&an=201

Charge transport after hard breakdown in gate oxides

We show measurement results and simulations of current�voltage characteristics of Metal-Oxide-Semiconductor capacitors after hard breakdown. The devices exhibit either point contact or diode behaviour, depending on electrode and substrate characteristics and the bias regime. The charge transport characteristics were reproduced in device simulations, including the dependence on the gate dimensions and breakdown spot size

INTERFACE STATE GENERATION IN NMOS TRANSISTORS DURING HOT CARRIER STRESS AT LOW TEMPERATURES

The generation of interface states in NMOS transistors during hot carrier injection is investigated at temperatures between 300 and 75 K. It is found that hot carrier stress at low temperatures induces a higher number of interface states than at 300 K. The generation rate of interface states can be fitted with a power law as a function of stressing time with a value of the exponent which is independent of the stressing temperature. A similar dependence on the stressing gate voltage is found for hot carrier stress at 75 K and 300 K. The results suggest a temperature independent mechanism of interface state creation. The important role of oxide hole traps in the interface state generation at low temperatures is demonstrated using two-step experiments

Performance enhancement in Ge pMOSFETs with orientation fabricated with a Si-compatible process flow

10.1016/j.mee.2010.01.010Microelectronic Engineering87112115-2118MIEN

Device characteristics and parameters of high performance long-channel Ge pMOSFETs with different channel-orientations

10.1117/12.926877Proceedings of SPIE - The International Society for Optical Engineering8549-PSIS

Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI

International audienc