Enhanced superconductivity in aluminum-based hyperbolic metamaterials

One of the most important goals of condensed matter physics is materials by design, i.e. the ability to reliably predict and design materials with a set of desired properties. A striking example is the deterministic enhancement of the superconducting properties of materials. Recent experiments have demonstrated that the metamaterial approach is capable of achieving this goal, such as tripling the critical temperature T-C in Al-Al2O3 epsilon near zero (ENZ) core-shell metamaterial superconductors. Here, we demonstrate that an Al/Al2O3 hyperbolic metamaterial geometry is capable of a similar T-C enhancement, while having superior transport and magnetic properties compared to the core-shell metamaterial superconductors

Observation of the out-of-plane magnetization in a mesoscopic ferromagnetic structure superjacent to a superconductor

The geometry of magnetic flux penetration in a high temperature superconductor at a buried interface was imaged using element-specific x-ray excited luminescence. We performed low temperature observation of the flux penetration in YBa2Cu3O7–δ (YBCO) at a buried interface by imaging of the perpendicular magnetization component in square Permalloy (Py) mesostructures patterned superjacent to a YBCO film. Element specific imaging below the critical temperature of YBCO reveals a cross-like geometry of the perpendicular magnetization component which is decorated by regions of alternating out-of-plane magnetization at the edges of the patterned Py structures. The cross structure can be attributed to the geometry of flux penetration originating from the superconductor and is reproduced using micromagnetic simulations. Our experimental method opens up possibilities for the investigation of flux penetration in superconductors at the nanoscale

Construction of 3-D cellular multi-layers with extracellular matrix assembly using magnatic nanoparticles

Construction of 3-dimensional (3-D) engineered tissue is increasingly being investigated for use in drug discovery and regenerative medicine. Here, we developed multi-layered 3-D cellular assembly by using magnetic nanoparticles (MNP) isolated from Magnetospirillum sp. AMB-1 magnetotactic bacteria. Magnetized human dermal fibroblasts (HDFBs) were prepared by treatment with the MNP, induced to form 3-D assembly under a magnetic field. Analyses including LIVE/DEAD assay, transmission electron microscopy revealed that the MNP were internalized via clathrin-mediated endocytosis without cytotoxicity. The magnetized HDFBs could build 3-D structure as a function of seeding density. When the highest seeding density (5 × 105 cells/mm2 was used, the thickness of assembly was 4190 ± 169 μm, with approximately 93±16 cell layers being formed. Immunofluorescence staining confirmed homogeneous distribution of ECM and junction proteins throughout the 3-D assembly. Real-time PCR analysis showed decrease in expression levels of collagen types I and IV but increase in that of connexin 43 in the 3-D assembly compared with the 2-D culture. Finally, we demonstrated that the discernible layers can be formed hierarchically by serial assembly. In conclusion, our study showed that a multi-layered structure can be easily prepared using magnetically-assisted cellular assembly with highlighting cell-cell and cell-ECM communication.OAIID:RECH_ACHV_DSTSH_NO:T201623722RECH_ACHV_FG:RR00200001ADJUST_YN:EMP_ID:A002014CITE_RATE:3.929FILENAME:7. (2016.10) Construction of 3-D Cellular Multi-Layers with.pdfDEPT_NM:화학생물공학부EMAIL:[email protected]_YN:YFILEURL:https://srnd.snu.ac.kr/eXrepEIR/fws/file/a5981ae9-bf9b-4b44-bd34-9e96bc984798/linkCONFIRM:

Strain effect in epitaxial VO2 thin films grown on sapphire substrates using SnO2 buffer layers

Epitaxial VO2/SnO2 thin film heterostructures were deposited on m-cut sapphire substrates via pulsed laser deposition. By adjusting SnO2 (150 nm) growth conditions, we are able to control the interfacial strain between the VO2 film and SnO2 buffer layer such that the semiconductor-to-metal transition temperature (TC) of VO2 films can be tuned without diminishing the magnitude of the transition. It is shown that in-plane tensile strain and out-of-plane compressive strain of the VO2 film leads to a decrease of Tc. Interestingly, VO2 films on SnO2 buffer layers exhibit a structural phase transition from tetragonal-like VO2 to tetragonal-VO2 during the semiconductor-to-metal transition. These results suggest that the strain generated by SnO2 buffer provides an effective way for tuning the TC of VO2 films