Current localisation and redistribution as the basis of discontinuous current controlled negative differential resistance in NbOx

In-situ thermo-reflectance imaging is used to show that the discontinuous, snap-back mode of current-controlled negative differential resistance (CC-NDR) in NbOx-based devices is a direct consequence of current localization and redistribution. Current localisation is shown to result from the creation of a conductive filament either during electroforming or from current bifurcation due to the super-linear temperature dependence of the film conductivity. The snap-back response then arises from current redistribution between regions of low and high current-density due to the rapid increase in conductivity created within the high current density region. This redistribution is further shown to depend on the relative resistance of the low current-density region with the characteristics of NbOx cross-point devices transitioning between continuous and discontinuous snap-back modes at critical values of film conductivity, area, thickness and temperature, as predicted. These results clearly demonstrate that snap-back is a generic response that arises from current localization and redistribution within the oxide film rather than a material-specific phase transition, thus resolving a long-standing controversy.Comment: 21 Page

Schottky-Barrier-Induced Asymmetry in the Negative-Differential-Resistance Response of Nb/NbOx/Pt Cross-Point Devices

The negative differential resistance (NDR) response of Nb/NbOx/Pt cross-point devices is shown to have a polarity dependence due to the effect of the metal/oxide Schottky barriers on the contact resistance. Three distinct responses are observed under opposite polarity testing: bipolar S-type NDR, bipolar snap-back NDR, and combined S-type and snap-back NDR, depending on the stoichiometry of the oxide film and device area. In-situ thermoreflectance imaging is used to show that these NDR responses are associated with strong current localisation, thereby justifying the use of a previously developed two-zone, core shell thermal model of the device. The observed polarity dependent NDR responses, and their dependence on stoichiometry and area, are then explained by extending this model to include the effect of the polarity dependent contact resistance. This study provides an improved understanding of the NDR response of metal/oxide/metal structures and informs the engineering of devices for neuromorphic computing and non-volatile memory applications.This work is partly funded by an Australian Research Council (ARC) Linkage Project (LP150100693) and Varian Semiconductor Equipment/Applied Material

Electric Field- And Current-Induced Electroforming Modes in NbOx

Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here, we use a simple photoresist-based detection technique to map the spatial distribution of conductive filaments formed in Nb/NbOx/Pt devices, and correlate these with current-voltage characteristics and in situ thermoreflectance measurements to identify distinct modes of electroforming in low- and high-conductivity NbOx films. In low-conductivity films, the filaments are randomly distributed within the oxide film, consistent with a field-induced weakest-link mechanism, while in high-conductivity films they are concentrated in the center of the film. In the latter case, the current-voltage characteristics and in situ thermoreflectance imaging show that electroforming is associated with current bifurcation into regions of low and high current density. This is supported by finite element modeling of the current distribution and shown to be consistent with predictions of a simple core-shell model of the current distribution. These results clearly demonstrate two distinct modes of electroforming in the same material system and show that the dominant mode depends on the conductivity of the film, with field-induced electroforming dominant in low-conductivity films and current bifurcation-induced electroforming dominant in high-conductivity films.This work was partly funded by the Australian Research Council (ARC) and Varian Semiconductor Equipment/ Applied Materials through an ARC Linkage Project Grant: LP150100693

Advanced Thermal Characterization and Temperature Control to Enable the Next Generation of Micro-Electronic Technologies

In the electronics world, self-heating is an inevitable by-product of electrical activation that has a major impact on device performance and reliability. Thermal technologies have been in constant development to effectively dissipate the generated heat and keep device operation temperatures within reliable limits. Moreover, thermal characterization technologies have been implemented to understand the thermal performance within microelectronic sys- tems, but not without facing experimental and numerical challenges. This work presents ad- vanced thermal investigations, both experimental and numerical, that are adapted and most suited for emerging micro-electronic technologies. Initially, the main experimental and numerical modeling challenges faced in the thermal analysis of micro-electronics are discussed. The advanced thermal characterization techniques are then presented, from high-resolution thermorflectance based thermal imaging to adaptive multi-grid numerical techniques. Moreover, a coupled experimental and numerical thermal investigation is presented for a more complete thermal assessment of micro-scale semiconductor devices. The coupled approach provides quick and accurate analysis of the thermal aspect of complex micro-electronic device operation and allows the advancement in design and reliability of devices used in numerous applications such as high voltage switching, low power micro-sensing, non-volatile memory, and neuromorphic computing. These thermal characterization strategies are also applied at the integration level of integrated circuits where interconnects reliability is also impacted by their thermal performance. A full review is presented for each of the studied device technologies in an effort to suitably and effectively apply the presented thermal characterization techniques to address the unique requirements and challenges

It Could Be Worse But It Should Be Better: COVID-19 and The Lebanese Radiology Departments Preparedness.

An unprecedented sanitary challenge is threatening human beings due to COVID-19 pandemic. There is no light at the end of the tunnel concerning treatment and worries from a possible second wave start to arise even before the end of the first one. We conducted a multicenter study to reassess the different aspects of radiology departments’ preparedness in Lebanon stating the points of strength and more importantly depicting the points of weakness. Lessons were then extracted to be more prepared for possible future similar circumstances