Optical Properties of Crystals with Spatial Dispersion: Josephson Plasma Resonance in Layered Superconductors

We derive the transmission coefficient, $T(\omega)$, for grazing incidence of crystals with spatial dispersion accounting for the excitation of multiple modes with different wave vectors ${\bf k}$ for a given frequency $\omega$. The generalization of the Fresnel formulas contains the refraction indices of these modes as determined by the dielectric function $\epsilon(\omega,{\bf k})$. Near frequencies $\omega_e$, where the group velocity vanishes, $T(\omega)$ depends also on an additional parameter determined by the crystal microstructure. The transmission $T$ is significantly suppressed, if one of the excited modes is decaying into the crystal. We derive these features microscopically for the Josephson plasma resonance in layered superconductors.Comment: 4 pages, 2 figures, epl.cls style file, minor change

Field Dependence of the Josephson Plasma Resonance in Layered Superconductors with Alternating Junctions

The Josephson plasma resonance in layered superconductors with alternating critical current densities is investigated in a low perpendicular magnetic field. In the vortex solid phase the current densities and the squared bare plasma frequencies decrease linearly with the magnetic field. Taking into account the coupling due to charge fluctuations on the layers, we extract from recent optical data for SmLa_{1-x} Sr_x CuO_{4-delta} the Josephson penetration length lambda_{ab} approximately 1100 A parallel to the layers at T=10 K.Comment: 5 pages, 6 eps-figures, final version with minor misprints correcte

Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation

The integration of ferromagnetic Mn5Ge3 with the Ge matrix is promising for spin injection in a silicon-compatible geometry. In this paper, we report the preparation of magnetic Mn5Ge3 nanocrystals embedded inside the Ge matrix by Mn ions implantation at elevated temperature. By X-ray diffraction and transmission electron microscopy, we observe crystalline Mn5Ge3 with variable size depending on the Mn ion fluence. The electronic structure of Mn in Mn5Ge3 nanocrystals is 3d6 configuration, the same as in bulk Mn5Ge3. A large positive magnetoresistance has been observed at low temperatures. It can be explained by the conductivity inhomogeneity in the magnetic/semiconductor hybrid system.Comment: 16 pages, 5 figure