Ultrafast holography and transient-absorption spectroscopy in charge-transfer polymers

Charge-transfer polymers are a new class of nonlinear optical materials which can be used for generating femtosecond holographic gratings. Using semiconducting polymers sensitized with varying concentrations of C{sub 60}, holographic gratings were recorded by individual ultrafast laser pulses; the diffraction efficiency and time decay of the gratings were measured using non-degenerate four-wave mixing. Using a figure of merit for dynamic data processing, the temporal diffraction efficiency, this new class of materials exhibits between two and 12 orders of magnitude higher response than previous reports. The charge transfer range at polymer/C{sub 60} interfaces was further studied using transient absorption spectroscopy. The fact that charge-transfer occurs in the picosecond-time scale in bilayer structures (thickness 200 {angstrom}) implies that diffusion of localized excitations to the interface is not the dominant mechanism; the charge transfer range is a significant fraction of the film thickness. From analysis of the excited state decay curves, we estimate the charge transfer range to be 80 {angstrom} and interpret that range as resulting from quantum delocalization of the photoexcitations

Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile

We show that infrared imaging of the charge density profile in organic field-effect transistors (FETs) can probe transport characteristics which are difficult to access by conventional contact-based measurements. Specifically, we carry out experiments and modeling of infrared spectromicroscopy of poly(3-hexylthiophene) (P3HT) FETs in which charge injection is affected by a relatively low resistance of the gate insulators. We conclude that the mobility of P3HT has a power-law density dependence, which is consistent with the activated transport in disorder-induced tails of the density of states.Comment: 3+ pages, 2 figure

Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices

We have fabricated electric double-layer field-effect devices to electrostatically dope our active materials, either $x$=0.015 Ga$_{1-x}$Mn$_x$As or $x$=3.2$\times10^{-4}$ Ga$_{1-x}$Be$_x$As. The devices are tailored for interrogation of electric field induced changes to the frequency dependent conductivity in the accumulation or depletions layers of the active material via infrared (IR) spectroscopy. The spectra of the (Ga,Be)As-based device reveal electric field induced changes to the IR conductivity consistent with an enhancement or reduction of the Drude response in the accumulation and depletion polarities, respectively. The spectroscopic features of this device are all indicative of metallic conduction within the GaAs host valence band (VB). For the (Ga,Mn)As-based device, the spectra show enhancement of the far-IR itinerant carrier response and broad mid-IR resonance upon hole accumulation, with a decrease of these features in the depletion polarity. These later spectral features demonstrate that conduction in ferromagnetic (FM) Ga$_{1-x}$Mn$_x$As is distinct from genuine metallic behavior due to extended states in the host VB. Furthermore, these data support the notion that a Mn-induced impurity band plays a vital role in the electron dynamics of FM Ga$_{1-x}$Mn$_x$As. We add, a sum-rule analysis of the spectra of our devices suggests that the Mn or Be doping does not lead to a substantial renormalization of the GaAs host VB

Topological Excitations of One-Dimensional Correlated Electron Systems

Properties of low-energy excitations in one-dimensional superconductors and density-wave systems are examined by the bosonization technique. In addition to the usual spin and charge quantum numbers, a new, independently measurable attribute is introduced to describe elementary, low-energy excitations. It can be defined as a number w which determines, in multiple of $\pi$, how many times the phase of the order parameter winds as an excitation is transposed from far left to far right. The winding number is zero for electrons and holes with conventional quantum numbers, but it acquires a nontrivial value w=1 for neutral spin-1/2 excitations and for spinless excitations with a unit electron charge. It may even be irrational, if the charge is irrational. Thus, these excitations are topological, and they can be viewed as composite particles made of spin or charge degrees of freedom and dressed by kinks in the order parameter.Comment: 5 pages. And we are not only splitting point

Knight Shift Anomalies in Heavy Electron Materials

We calculate non-linear Knight Shift $K$ vs. susceptibility $\chi$ anomalies for Ce ions possessing local moments in metals. The ions are modeled with the Anderson Hamiltonian and studied within the non-crossing approximation (NCA). The $K-vs.- \chi$ non-linearity diminishes with decreasing Kondo temperature $T_0$ and nuclear spin- local moment separation. Treating the Ce ions as an incoherent array in CeSn$_3$, we find excellent agreement with the observed Sn $K(T)$ data.Comment: 4 pages, Revtex, 3 figures available upon request from [email protected]

Exact Thermodynamics of the Double sinh-Gordon Theory in 1+1-Dimensions

We study the classical thermodynamics of a 1+1-dimensional double-well sinh-Gordon theory. Remarkably, the Schrodinger-like equation resulting from the transfer integral method is quasi-exactly solvable at several temperatures. This allows exact calculation of the partition function and some correlation functions above and below the short-range order (``kink'') transition, in striking agreement with high resolution Langevin simulations. Interesting connections with the Landau-Ginzburg and double sine-Gordon models are also established.Comment: 4 pages, 3 figures (embedded using epsf), uses RevTeX plus macro (included). Minor revision to match journal version, Phys. Rev. Lett. (in press

Soliton effects in dangling-bond wires on Si(001)

Dangling bond wires on Si(001) are prototypical one dimensional wires, which are expected to show polaronic and solitonic effects. We present electronic structure calculations, using the tight binding model, of solitons in dangling-bond wires, and demonstrate that these defects are stable in even-length wires, although approximately 0.1 eV higher in energy than a perfect wire. We also note that in contrast to conjugated polymer systems, there are two types of soliton and that the type of soliton has strong effects on the energetics of the bandgap edges, with formation of intra-gap states between 0.1 eV and 0.2 eV from the band edges. These intra-gap states are localised on the atoms comprising the soliton.Comment: 6 pages, 3 figures, 3 tables, submitted to Phys. Rev.

Zero frequency divergence and gauge phase factor in the optical response theory

The static current-current correlation leads to the definitional zero frequency divergence (ZFD) in the optical susceptibilities. Previous computations have shown nonequivalent results between two gauges (${\bf p\cdot A}$ and ${\bf E \cdot r}$) under the exact same unperturbed wave functions. We reveal that those problems are caused by the improper treatment of the time-dependent gauge phase factor in the optical response theory. The gauge phase factor, which is conventionally ignored by the theory, is important in solving ZFD and obtaining the equivalent results between these two gauges. The Hamiltonians with these two gauges are not necessary equivalent unless the gauge phase factor is properly considered in the wavefunctions. Both Su-Shrieffer-Heeger (SSH) and Takayama-Lin-Liu-Maki (TLM) models of trans-polyacetylene serve as our illustrative examples to study the linear susceptibility $\chi^{(1)}$ through both current-current and dipole-dipole correlations. Previous improper results of the $\chi^{(1)}$ calculations and distribution functions with both gauges are discussed. The importance of gauge phase factor to solve the ZFD problem is emphasized based on SSH and TLM models. As a conclusion, the reason why dipole-dipole correlation favors over current-current correlation in the practical computations is explained.Comment: 17 pages, 7 figures, submitted to Phys. Rev.