A comparative study of government public financial aid to private colleges in U.S., Japan and South Korea

Most of the governments in the world provide the private colleges with necessary financial support. This is evident especially in U.S., Japan and South Korea where the private higher education is very advanced. The private colleges in these countries have undergone different development paths. As their school funds come from different sources, the public financial support they gain exhibits different characteristics. The governments of these three countries attach great important to the development of private colleges, and issued a complete set of regulations to stipulate that the private colleges qualify for the same financial support as the public colleges. Various measures that were taken by the governments to raise funds contribute to sustainable development of the private colleges

Several Cognitions on Intensifying Chinese Excellent Traditional Culture Education in Vocational Colleges

As the soul of Chinese national culture and profound foundation of advanced socialist culture, Chinese excellent traditional culture reflects the essence of national culture. Vocational colleges shoulder the heavy task of cultivating high-quality workers and skilled talents. It is objectively necessary to regard Chinese excellent traditional culture education as a basic general education course system and scientifically integrate it in course teaching of vocational colleges. Besides, this is an important acting point and key point of course setting innovation in vocational colleges. Vocational colleges must scientifically and reasonably plan course setting of Chinese excellent traditional culture

Plasmonic nano-resonator enhanced one-photon luminescence from single gold nanorods

Strong Stokes and anti-Stokes one-photon luminescence from single gold nanorods is measured in experiments. It is found that the intensity and polarization of the Stokes and anti-Stokes emissions are in strong correlation. Our experimental observation discovered a coherent process in light emission from single gold nanorods. We present a theoretical mode, based on the concept of cavity resonance, for consistently understanding both Stokes and anti-Stokes photoluminescence. Our theory is in good agreement of all our measurements.Comment: 14 pages, 7 figures, 2 table

Formation of Graphene on SiC(000-1) Surfaces in Disilane and Neon Environments

The formation of graphene on the SiC(000-1) surface (the C-face of the {0001} surfaces) has been studied, utilizing both disilane and neon environments. In both cases, the interface between the graphene and the SiC is found to be different than for graphene formation in vacuum. A complex low-energy electron diffraction pattern with rt(43) x rt(43)-R\pm7.6{\deg} symmetry is found to form at the interface. An interface layer consisting essentially of graphene is observed, and it is argued that the manner in which this layer covalently bonds to the underlying SiC produces the rt(43) x rt(43)-R\pm7.6{\deg} structure [i.e. analogous to the 6rt(3) x 6rt(3)-R30{\deg} "buffer layer" that forms on the SiC(0001) surface (the Si-face)]. Oxidation of the surface is found to modify (eliminate) the rt(43) x rt(43)-R\pm7.6{\deg} structure, which is interpreted in the same manner as the known "decoupling" that occurs for the Si-face buffer layer.Comment: 12 pages, 6 figures; to to be published in J. Vac. Sci. Technol.

Formation of a Buffer Layer for Graphene on C-face SiC{0001}

Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in a Si-rich environment are studied using low-energy electron diffraction (LEED) and low-energy electron microscopy (LEEM). Upon graphitization, an interface with rt(43) x rt(43)-R7.6 degree symmetry is observed by in situ LEED. After oxidation, the interface displays rt(3) x rt(3)-R30 degree symmetry. Electron reflectivity measurements indicate that these interface structures arise from a graphene-like "buffer layer" that forms between the graphene and the SiC, similar to that observed on Si-face SiC. From a dynamical LEED structure calculation for the oxidized C-face surface, it is found to consist of a graphene layer sitting on top of a silicate (Si2O3) layer, with the silicate layer having the well-known structure as previously studied on bare SiC(000-1) surfaces. Based on this result, the structure of the interface prior to oxidation is discussed.Comment: 12 pages, 5 figure

Interface Structure of Graphene on SiC(000-1)

Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in vacuum or in a Si-rich environment are compared. It is found that different interface structures occur for the two situations. The former yields a well known 3x3 reconstructed interface, whereas the latter produces an interface with rt(43)xrt(43)-R\pm7.6 degrees symmetry. This structure is shown to contain a graphene-like layer with properties similar to the 6rt(3)x6rt(3)-R30 degrees "buffer layer" that forms on the Si(0001) surface (the Si-face).Comment: 9 pages, 4 figures; added Refs. 16 and 20, and made minor revisions to tex