Performance of Different Mach-Zehnder Interferometer (MZI) Structures for Optical Modulator

An optical modulator is a device that electrically controls the output phase and the output amplitude of the optical signal. This paper analyzes the performance of different structures of the MZI as an optical modulator. This project compares the performance of Y-coupler and MMI coupler as Mach-Zehnder Interferometer (MZI) modulator on the SiliconOn-Insulator (SOI). This project used OptiBPM software and OptiSys for designing the structures and performance analysis. The performance has been analyzed based on the insertion loss, extinction ratio, phase shift and modulation efficiency. MMIcoupler design shows better performance with reduced insertion loss and better modulation efficiency of 2.53% and 17% respectively than that of the Y-coupler. Furthermore, the extinction ratio and phase shift of MMI coupler show an increment about 8.35% and 7.96% respectively when analyzed as the optical modulator. Therefore, the MMI coupler as MZI modulator exhibits better performance than the Y-coupler

Analyze Of Process Parameter Variance In 19nm Wsi2/Tio2 NMOS Device Using 2k-Factorial Design

This project investigates and analyzes the impact of process parameter variance on the drive current (ION) and leakage current (IOFF) for 19nm WSi2/TiO2 NMOS device using 2k-factorial design. The four process parameter, namely halo implant dose, halo implant energy, source/drain (S/D) implant dose and S/D implant energy will be investigated and adjusted to improve the results. The simulated of the device was performed by using ATHENA module. Meanwhile the electrical characterization of the device was implemented by using ATLAS module. These two modules will be combined with 2kfactorial to aid design and optimize the process parameters. The most effective process parameter with respect ION and IOFF were chosen depending on the percentage of the factor effect on S/N ratio that indicates the relative power of factor to reduce variation. The most dominant or significant factors in S/N Ratio are pocket halo implant dose and S/D implant energy. Meanwhile, the values of ION and IOFF values for 19nm WSi2/SiO2 NMOS device after optimization approaches are 591.38 µA/µm and 2.217 pA/µm respectively. The results obtained are meet the requirement of International Technology Roadmap Semiconductor (ITRS) 2013 prediction