Epitaxial and layer-by-layer growth of EuO thin films on yttria-stabilized cubic zirconia (001) using MBE distillation

We have succeeded in growing epitaxial and highly stoichiometric films of EuO on yttria-stabilized cubic zirconia (YSZ) (001). The use of the Eu-distillation process during the molecular beam epitaxy assisted growth enables the consistent achievement of stoichiometry. We have also succeeded in growing the films in a layer-by-layer fashion by fine tuning the Eu vs. oxygen deposition rates. The initial stages of growth involve the limited supply of oxygen from the YSZ substrate, but the EuO stoichiometry can still be well maintained. The films grown were sufficiently smooth so that the capping with a thin layer of aluminum was leak tight and enabled ex situ experiments free from trivalent Eu species. The findings were used to obtain recipes for better epitaxial growth of EuO on MgO (001).Comment: 10 pages, 15 figure

Epitaxy, stoichiometry, and magnetic properties of Gd-doped EuO films on YSZ (001)

We have succeeded in preparing high-quality Gd-doped single-crystalline EuO films. Using Eu-distillation-assisted molecular beam epitaxy and a systematic variation in the Gd and oxygen deposition rates, we have been able to observe sustained layer-by-layer epitaxial growth on yttria-stabilized cubic zirconia (001). The presence of Gd helps to stabilize the layer-by-layer growth mode. We used soft x-ray absorption spectroscopy at the Eu and Gd M4,5 edges to confirm the absence of Eu3+ contaminants and to determine the actual Gd concentration. The distillation process ensures the absence of oxygen vacancies in the films. From magnetization measurements we found the Curie temperature to increase smoothly as a function of doping from 70 K up to a maximum of 125 K. A threshold behavior was not observed for concentrations as low as 0.2%.Comment: 8 pages, 9 figure

Electronic structure of SrPt_4Ge_{12}: a combined photoelectron spectroscopy and band structure study

We present a combined study of the electronic structure of the superconducting skutterudite derivative SrPt4Ge12 by means of X-ray photoelectron spectroscopy and full potential band structure calculations including an analysis of the chemical bonding. We establish that the states at the Fermi level originate predominantly from the Ge 4p electrons and that the Pt 5d shell is effectively full. We find excellent agreement between the measured and the calculated valence band spectra, thereby validating that band structure calculations in combination with photoelectron spectroscopy can provide a solid basis for the modeling of superconductivity in the compounds MPt4Ge12 (M = Sr, Ba, La, Pr) series

Epitaxy, stoichiometry, and magnetic properties of Gd-doped EuO films on YSZ (001)

We have succeeded in preparing high-quality Gd-doped single-crystalline EuO films. Using Eu-distillation-assisted molecular beam epitaxy and a systematic variation in the Gd and oxygen deposition rates, we have been able to observe sustained layer-by-layer epitaxial growth on yttria-stabilized cubic zirconia (001). The presence of Gd helps to stabilize the layer-by-layer growth mode. We used soft x-ray absorption spectroscopy at the Eu and Gd M4,5 edges to confirm the absence of Eu3+ contaminants and to determine the actual Gd concentration. The distillation process ensures the absence of oxygen vacancies in the films. From magnetization measurements we found the Curie temperature to increase smoothly as a function of doping from 70 K up to a maximum of 125 K. A threshold behavior was not observed for concentrations as low as 0.2%

Polarization dependent hard X-ray photoemission experiments for solids: Efficiency and limits for unraveling the orbital character of the valence band

We have investigated the efficiency and limits of polarization dependent hard X-ray photoelectron spectroscopy (HAXPES) in order to establish how well this method can be used to unravel quantitatively the contributions of the orbitals forming the valence band of solids. By rotating the energy analyzer rather than the polarization vector of the light using a phase retarder, we obtained the advantage that the full polarization of the light is available for the investigation. Using NiO, ZnO, and Cu2O as examples for solid state materials, we established that the polarization dependence is much larger than in photoemission experiments utilizing ultra-violet or soft X-ray light. Yet we also have discovered that the polarization dependence is less than complete on the basis of atomic calculations, strongly suggesting that the trajectories of the outgoing electrons are affected by appreciable side-scattering processes even at these high kinetic energies. We have found in our experiment that these can be effectively described as a directional spread of +/- 18 degrees of the photoelectrons. This knowledge allows us to identify, for example, reliably the Ni 3d spectral weight of the NiO valence band and at the same time to demonstrate the importance of the Ni 4s for the chemical stability of the compound. (C) 2014 Elsevier B.V. All rights reserved

Polarization dependent hard X-ray photoemission experiments for solids: Efficiency and limits for unraveling the orbital character of the valence band

We have investigated the efficiency and limits of polarization dependent hard X-ray photoelectron spectroscopy (HAXPES) in order to establish how well this method can be used to unravel quantitatively the contributions of the orbitals forming the valence band of solids. By rotating the energy analyzer rather than the polarization vector of the light using a phase retarder, we obtained the advantage that the full polarization of the light is available for the investigation. Using NiO, ZnO, and Cu2O as examples for solid state materials, we established that the polarization dependence is much larger than in photoemission experiments utilizing ultra-violet or soft X-ray light. Yet we also have discovered that the polarization dependence is less than complete on the basis of atomic calculations, strongly suggesting that the trajectories of the outgoing electrons are affected by appreciable side-scattering processes even at these high kinetic energies. We have found in our experiment that these can be effectively described as a directional spread of +/- 18 degrees of the photoelectrons. This knowledge allows us to identify, for example, reliably the Ni 3d spectral weight of the NiO valence band and at the same time to demonstrate the importance of the Ni 4s for the chemical stability of the compound. (C) 2014 Elsevier B.V. All rights reserved