5,135 research outputs found
Electroluminescence and photoluminescence of Ge-implanted Si/SiO_2/Si structures
Electroluminescent devices were fabricated in SiO_2 films containing Ge nanocrystals formed by ion implantation and precipitation during annealing at 900 °C, and the visible room‐temperature electroluminescence and photoluminescence spectra were found to be broadly similar. The electroluminescent devices have an onset for emission in reverse bias of approximately −10 V, suggesting that the mechanism for carrier excitation may be an avalanche breakdown caused by injection of hot carriers into the oxide. The electroluminescent emission was stable for periods exceeding 6 h
Model-free Continuation of Periodic Orbits in Certain Nonlinear Systems Using Continuous-Time Adaptive Control
This paper generalizes recent results by the authors on noninvasive
model-reference adaptive control designs for control-based continuation of
periodic orbits in periodically excited linear systems with matched
uncertainties to a larger class of periodically excited nonlinear systems with
matched uncertainties and known structure. A candidate adaptive feedback design
is also proposed in the case of scalar problems with unmodeled nonlinearities.
In the former case, rigorous analysis shows guaranteed performance bounds for
the associated prediction and estimation errors. Together with an assumption of
persistent excitation, there follows asymptotic convergence to periodic
responses determined uniquely by an a priori unknown periodic reference input
and independent of initial conditions, as required by the control-based
continuation paradigm. In particular, when the reference input equals the
sought periodic response, the steady-state control input vanishes. Identical
conclusions follow for the case of scalar dynamics with unmodeled
nonlinearities, albeit with slow rates of convergence. Numerical simulations
validate the theoretical predictions for individual parameter values.
Integration with the software package COCO demonstrate successful continuation
along families of stable and unstable periodic orbits with a minimum of
parameter tuning. The results expand the envelope of known noninvasive feedback
strategies for use in experimental model validation and engineering design
T-URF13 Protein from Mitochondria of Texas Male-Sterile Maize (Zea mays L.)
The protein T-URF13 (URF13) is specific to mitochondria of maize (Zea mays L.) with Texas (T) male-sterile cytoplasm and has been implicated in causing male sterility and susceptibility to T-cytoplasm-specific fungal diseases. T-URF13 was purified from isolated mitochondria from maize (line B73) with T cytoplasm by gel filtration and a quasi two-dimensional polyacrylamide gel electrophoresis system. Antibodies to the purified and denatured protein were produced in rabbits. Anti-T-URF13 antiserum was used to show that T-URF13 is in the inner membrane of mitochondria and behaves as an integral membrane protein when mitochondria are fractionated with sodium carbonate or Triton X-114. The antiserum and protein A tagged with 20-nanometer-gold particles were used to localize T-URF13 in T mitochondria by electron microscopy of sections of isolated mitochondria from etiolated shoots and sections of roots and of tapetal cells at pre-and post-degeneration stages of microsporogenesis. The microscopic study confirms that T-URF13 is specifically localized in the mitochondrial membranes of all of the T mitochondria tested, notably those in the tapetum from the meiocyte stage to the late-microspore stage. No change in the amount of labeled T-URF13 protein in the mitochondria of aging tapetal cells was detected
Ultralow threshold on-chip microcavity nanocrystal quantum dot lasers
Chemically synthesized nanocrystal, CdSe/ZnS (core/shell), quantum dots are coated on the surface of an ultrahigh-Q toroidal microcavity and the lasing is observed at room and liquid nitrogen temperature by pulsed excitation of quantum dots, either through tapered fiber or free space. Use of a tapered fiber coupling substantially lowered the threshold energy when compared with the case of free space excitation. The reason for the threshold reduction is attributed to the efficient delivery of pump pulses to the active gain region of the toroidal microcavity. Further threshold reduction was possible by quantum dot surface-coverage control. By decreasing the quantum dot numbers on the surface of the cavity, the threshold energy is further decreased down to 9.9 fJ
The role of quantum-confined excitons vs defects in the visible luminescence of SiO2 films containing Ge nanocrystals
Synthesis of Ge nanocrystals in SiO2 films is carried out by precipitation from a supersaturated solid solution of Ge in SiO2 made by Ge ion implantation. The films exhibit strong room-temperature visible photoluminescence. The measured photoluminescence peak energy and lifetimes show poor correlations with nanocrystal size compared to calculations involving radiative recombination of quantum-confined excitons in Ge quantum dots. In addition, the photoluminescence spectra and lifetime measurements show only a weak temperature dependence. These observations strongly suggest that the observed visible luminescence in our samples is not due to the radiative recombination of quantum-confined excitons in Ge nanocrystals. Instead, observations of similar luminescence in Xe+ -implanted samples and reversible PL quenching by hydrogen or deuterium suggest that radiative defect centers in the SiO2 matrix are responsible for the observed luminescence
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