Photo-Sensitivity of Large Area Physical Vapor Deposited Mono and Bilayer MoS2

We present photosensitivity in large area physical vapour deposited mono and bi-layer MoS2 films. Photo-voltaic effect was observed in single layer MoS2 without any apparent rectifying junctions, making device fabrication straightforward. For bi-layers, no such effect was present, suggesting strong size effect in light-matter interaction. The photo-voltaic effect was observed to highly direction dependent in the film plane, which suggests that the oblique deposition configuration plays a key role in developing the rectifying potential gradient. To the best of our knowledge, this is the first report of any large area and transfer free MoS2 photo device with performance comparable to their exfoliated counterparts

Domain Engineering of Physical Vapor Deposited Two-Dimensional Materials

Physical vapor deposited two-dimensional (2D) materials span larger areas compared to exfoliated flakes, but suffer from very small grain or domain sizes. In this letter, we fabricate freestanding molybdenum disulfide (MoS2) and amorphous boron nitride (BN) specimens to expose both surfaces. We performed in situ heating in a transmission electron microscope to observe the domain restructuring in real time. The freestanding MoS2 specimens showed up to 100× increase in domain size, while the amorphous BN transformed in to polycrystalline hexagonal BN (h-BN) at temperatures around 600 °C much lower than the 850–1000 °C range cited in the literature

Continuous Ultra-Thin MoS2 Films Grown by Low-Temperature Physical Vapor Deposition

Uniform growth of pristine two dimensional (2D) materials over large areas at lower temperatures without sacrifice of their unique physical properties is a critical pre-requisite for seamless integration of next-generation van der Waals heterostructures into functional devices. This Letter describes a vapor phasegrowth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS2 on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350 °C. Synthesis of few-layer MoS2 in this ultra-high vacuum physical vapor deposition process yieldsmaterials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic transport measurements from contacts with separation on the order of centimeters

Continuous Ultra-Thin MoS2 Films Grown by Low-Temperature Physical Vapor Deposition

Uniform growth of pristine two dimensional (2D) materials over large areas at lower temperatures without sacrifice of their unique physical properties is a critical pre-requisite for seamless integration of next-generation van der Waals heterostructures into functional devices. This Letter describes a vapor phasegrowth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS2 on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350 °C. Synthesis of few-layer MoS2 in this ultra-high vacuum physical vapor deposition process yieldsmaterials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic transport measurements from contacts with separation on the order of centimeters

Mechanical Strain Dependence of Thermal Transport in Amorphous Silicon Thin Films

Recent computational studies predict mechanical strain–induced changes in thermal transport, which is yet to be validated by experimental data. In this article, we present experimental evidence of an increase in thermal conductivity of nominally 200-nm-thick freestanding amorphous silicon thin films under externally applied tensile loading. Using a combination of nanomechanical testing and infrared microscopy, we show that 2.5% tensile strain can increase thermal conductivity from 1 to 2.4 W/m-K. We propose that such an increase in thermal conductivity might be due to strain-induced changes in microstructure and/or carrier density. Microstructural and optical reflectivity characterization through Raman and infrared spectroscopy are presented to investigate this hypothesis

Influence of Strain on Thermal Conductivity of Silicon Nitride Thin Films

We present a micro-electro-mechanical system-based experimental technique to measure thermal conductivity of freestanding ultra-thin films of amorphous silicon nitride (Si3N4) as a function of mechanical strain. Using a combination of infrared thermal micrography and multi-physics simulation, we measured thermal conductivity of 50 nm thick silicon nitride films to observe it decrease from 2.7 W (m K)−1 at zero strain to 0.34 W (m K)−1 at about 2.4% tensile strain. We propose that such strong strain–thermal conductivity coupling is due to strain effects on fraction–phonon interaction that decreases the dominant hopping mode conduction in the amorphous silicon nitride specimens

Structural Size and Temperature Dependence of Solid to Air Heat Transfer

Accurate prediction of heat transfer from micro and nanoscale devices is very important for their operation and reliability. While the general consensus is that the heat transfer coefficient increases at the smaller scales, the literature also indicates contradiction in the scaling across length scales. In this paper, we present an experimental technique to accurately characterize heat transfer from micro to nano scales using infrared microscopy on nanofabricated specimens that are integrated with micro heaters. The heat transfer coefficient for quiescent air is found to be about two orders of magnitude higher than its bulk counterpart. It also showed pronounced inversely proportional relationship with temperature and suggested that solid to air conduction is the dominant mode of heat transfer. It was found that pressure only indirectly influences heat transfer. Based on the experimental data, we present an empirical relationship for the heat transfer coefficient that depends on the ratio of the surface area to cross-sectional area, temperature of the heated solid and its proximity to other solid bodies

Deconvoluting the Photonic and Electronic Response of 2D Materials: The Case of MoS2.

Evaluating and tuning the properties of two-dimensional (2D) materials is a major focus of advancing 2D science and technology. While many claim that the photonic properties of a 2D layer provide evidence that the material is "high quality", this may not be true for electronic performance. In this work, we deconvolute the photonic and electronic response of synthetic monolayer molybdenum disulfide. We demonstrate that enhanced photoluminescence can be robustly engineered via the proper choice of substrate, where growth of MoS2 on r-plane sapphire can yield >100x enhancement in PL and carrier lifetime due to increased molybdenum-oxygen bonding compared to that of traditionally grown MoS2 on c-plane sapphire. These dramatic enhancements in optical properties are similar to those of super-acid treated MoS2, and suggest that the electronic properties of the MoS2 are also superior. However, a direct comparison of the charge transport properties indicates that the enhanced PL due to increased Mo-O bonding leads to p-type compensation doping, and is accompanied by a 2x degradation in transport properties compared to MoS2 grown on c-plane sapphire. This work provides a foundation for understanding the link between photonic and electronic performance of 2D semiconducting layers, and demonstrates that they are not always correlated