10 research outputs found

    Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides

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    Lateral heterostructures with planar integrity form the basis of two-dimensional (2D) electronics and optoelectronics. Here we report that, through a two-step chemical vapor deposition (CVD) process, high-quality lateral heterostructures can be constructed between metallic and semiconducting transition metal disulfide (TMD) layers. Instead of edge epitaxy, polycrystalline monolayer MoS₂ in such junctions was revealed to nucleate from the vertices of multilayered VS₂ crystals, creating one-dimensional junctions with ultralow contact resistance (0.5 kΩ·μm). This lateral contact contributes to 6-fold improved field-effect mobility for monolayer MoS₂, compared to the conventional on-top nickel contacts. The all-CVD strategy presented here hence opens up a new avenue for all-2D-based synthetic electronics.Air Force Office of Scientific Research (Grant FA9550-15-1-0514)National Science Foundation (U.S.) (Grant EFRI-1542815)National Science Foundation (U.S.) (Grant DMR-1507806)National Science Foundation (U.S.) (Grant DMR/ECCS-1509197)National Science Foundation (U.S.) (Award 0939514)United States. Department of Energy (Grant DE-SC0010538

    Engineering single-atom dynamics with electron irradiation

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    Atomic engineering is envisioned to involve selectively inducing the desired dynamics of single atoms and combining these steps for larger-scale assemblies. Here, we focus on the first part by surveying the single-step dynamics of graphene dopants, primarily phosphorus, caused by electron irradiation both in experiment and simulation, and develop a theory for describing the probabilities of competing configurational outcomes depending on the postcollision momentum vector of the primary knock-on atom. The predicted branching ratio of configurational transformations agrees well with our atomically resolved experiments. This suggests a way for biasing the dynamics toward desired outcomes, paving the road for designing and further upscaling atomic engineering using electron irradiation.National Science Foundation (U.S.) (Grant ECCS-1610806)United States. Department of Energy (Grant DE-NE0008827)United States. Army Research Office (Grant W911NF-18-1-0431)National Science Foundation (U.S.) (Grant DMR/ECCS-1509197
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