Two Novel Approaches for Electron Beam Polarization from Unstrained GaAs

Two novel approaches to producing highly-polarized electron beams from unstrained GaAs were tested using a micro-Mott polarimeter. Based on a suggestion by Nakanishi [1]], twophoton photoemission with 1560 nm light was used with photocathodes of varying thickness: 625m, 0.32m, and 0.18m. For each of these photocathodes, the degree of spin polarization of the photoemitted beam was less than 50%. Polarization via two-photon absorption was highest from the thinnest photocathode sample and close to that obtained from one-photon absorption (using 778 nm light), with values 40.3±1.0% and 42.6±1.0%, respectively. The second attempt to produce highly-polarized electrons used one-photon emission with 778 nm light in Laguerre-Gaussian modes with different amounts of orbital angular momentum. The degree of electron spin polarization was consistent with zero, with an upper limit of ~3% for light with up to ±5ħ of orbital angular momentum. In contrast, the degree of spin polarization was 32.3±1.4% using circularly-polarized laser light at the same wavelength, which is typical for thick, unstrained GaAs photocathodes

Source and Extraction for Simultaneous Four-hall Beam Delivery System at CEBAF

A new design for simultaneous delivery of the electron beam to all four 12 GeV CEBAF experimental halls* requires a new 750 MHz RF separator system in the 5th pass extraction region, a 250 MHz repetition rate for its beams, and addition of a fourth laser at the photo-cathode gun. The proposed system works in tandem with the existing 500 MHz RF separators and beam repetition rate on the lower passes. The new 5th pass RF separators will have the same basic design but modified to run at 750 MHz. The change to the beam repetition rate will be at the photo-cathode gun through an innovative upgrade of the seed laser driver system using electro-optic modulators. The new laser system also allows addition of the fourth laser. The new RF separators, the new laser system and other hardware changes required to implement the Four-Hall operation delivery system will be discussed in this paper

Two Novel Approaches for Electron Beam Polarization from Unstrained GaAs

Two novel approaches to producing highly-polarized electron beams from unstrained GaAs were tested using a micro-Mott polarimeter. Based on a suggestion by Nakanishi [1]], twophoton photoemission with 1560 nm light was used with photocathodes of varying thickness: 625m, 0.32m, and 0.18m. For each of these photocathodes, the degree of spin polarization of the photoemitted beam was less than 50%. Polarization via two-photon absorption was highest from the thinnest photocathode sample and close to that obtained from one-photon absorption (using 778 nm light), with values 40.3±1.0% and 42.6±1.0%, respectively. The second attempt to produce highly-polarized electrons used one-photon emission with 778 nm light in Laguerre-Gaussian modes with different amounts of orbital angular momentum. The degree of electron spin polarization was consistent with zero, with an upper limit of ~3% for light with up to ±5ħ of orbital angular momentum. In contrast, the degree of spin polarization was 32.3±1.4% using circularly-polarized laser light at the same wavelength, which is typical for thick, unstrained GaAs photocathodes