Cu2O thin films for p-type metal oxide thin film transistors

The rapid progress of n-type metal oxide thin film transistors (TFTs) has motivated research on p-type metal oxide TFTs in order to realise metal oxide-based CMOS circuits which enable low power consumption large-area electronics. Cuprous oxide (Cu2O) has previously been proposed as a suitable active layer for p-type metal oxide TFTs. The two most significant challenges for achieving good quality Cu2O TFTs are to overcome the low field-effect mobility and an unacceptably high off-state current that are a feature of devices that have been reported to date. This dissertation focuses on improving the carrier mobility, and identifying the main origins of the low field-effect mobility and high off-state current in Cu2O TFTs. This work has three major findings. The first major outcome is a demonstration that vacuum annealing can be used to improve the carrier mobility in Cu2O without phase conversion, such as oxidation (CuO) or oxide reduction (Cu). In order to allow an in-depth discussion on the main origins of the very low carrier mobility in as-deposited films and the mobility enhancement by annealing, a quantitative analysis of the relative dominance of the main conduction mechanisms (i.e. trap-limited and grain-boundary-limited conduction) is performed. This shows that the low carrier mobility of as-deposited Cu2O is due to significant grain-boundary-limited conduction. In contrast, after annealing, grain-boundary-limited conduction becomes insignificant due to a considerable reduction in the energy barrier height at grain boundaries, and therefore trap-limited conduction dominates. A further mobility improvement by an increase in annealing temperature is explained by a reduction in the effect of trap-limited conduction resulting from a decrease in tail state density. The second major outcome of this work is the observation that grain orientation ([111] or [100] direction) of sputter-deposited Cu2O can be varied by control of the incident ion-to-Cu flux ratio. Using this technique, a systematic investigation on the effect of grain orientation on carrier mobility in Cu2O thin films is presented, which shows that the [100] Cu2O grain orientation is more favourable for realising a high carrier mobility. In the third and final outcome of this thesis, the temperature dependence of the drain current as a function of gate voltage along with the C-V characteristics reveals that minority carriers (electrons) cause the high off-state current in Cu2O TFTs. In addition, it is observed that an abrupt lowering of the activation energy and pinning of the Fermi energy occur in the off-state, which is attributed to subgap states at 0.38 eV below the conduction band minimum. These findings provide readers with the understanding of the main origins of the low carrier mobility and high off-state current in Cu2O TFTs, and the future research direction for resolving these problems.Engineering and Physical Sciences Research Council under Grant No. EP/M013650/

Invited; P-channel metal oxide thin film transistors for flexible CMOS logic: Challenges and opportunities

The ‘unique selling point’ of thin film transistors (TFTs) compared with MOSFETs is that the former do not require the substrate to be a semiconducting material. It is for this reason that TFTs are required for active matrix display backplanes. However, the development of the ‘Internet of Things’ (IoT) presents a new opportunity for TFTs as it becomes possible to build complex logic or memory circuits on flexible substrates that can be more easily incorporated into products such as clothing or packaging without the form factor restrictions that rigid semiconducting substrates impose. There have been recent reports of the successful fabrication of basic microprocessors comprising TFTs on plastic substrates instead of MOSFETs [1]. Please click Download on the upper right corner to see the full abstract

Integration of Organic Electrochemical Transistors with Implantable Probes

Funder: King Abdullah University of Science and Technology; Id: http://dx.doi.org/10.13039/501100004052Abstract: Organic electrochemical transistors (OECTs) are widely used as amplifying transducers of biological signals due to their high transconductance and biocompatibility. For implantable applications that penetrate into tissue, OECTs need to be integrated onto narrow probes. The scarcity of real estate necessitates the use of small local gate electrodes and narrow interconnects. This work shows that both of these factors lead to a decrease in the maximum transconductance and an increase in gate voltage required to attain this maximum. This work further shows that coating the gate electrode with a thick conducting polymer improves performance. These findings help guide the development of efficient OECTs on implantable probes

Effect of Plasma Treatment on Metal Oxide p–n Thin Film Diodes Fabricated at Room Temperature

Funder: Cambridge Trust; Id: http://dx.doi.org/10.13039/501100003343Abstract: There is a need for a good quality thin film diode using a metal oxide p–n heterojunction as it is an essential component for the realization of flexible large‐area electronics. However, metal oxide‐based diodes normally show poor rectification characteristics whose origin is still poorly understood; this is holding back their use in various applications. A systematic study of the origins of the poor performance is performed based on bias‐stress measurements using a cuprous oxide (Cu2O)/amorphous zinc‐tin oxide (a‐ZTO) heterojunction as an example. This suggests that multiple carrier trapping and thermal release of carriers in defect states stemming from oxygen vacancies at the heterojunction interface is the primary cause of poor rectification. It is demonstrated that a plasma treatment is an effective way to optimize the population of oxygen vacancies at the heterojunction interface based on extensive material analyses, allowing a significant improvement in the diode performance with a much‐enhanced rectification ratio from ≈20 to 10 000, and a consequent facilitation of the next‐generation of ubiquitous electronics

Flexible Conducting Polymer Electrodes for Selective Stimulation of Small Sensory Fibers in Humans

Funder: Beijing Institute of Collaborative InnovationAbstract: Small‐fiber neuropathy (SFN), a pathology caused by severe loss of free‐endings of unmyelinated sensory nerves, is difficult to diagnose and monitor. The use of cutaneous electrical stimulation as a diagnostic tool is hampered by the fact that the injected current penetrates deep into the skin and stimulates many other receptors. Interdigitated electrodes are recently proposed to control the depth of current penetration and selectively address small‐fibers. Here, flexible and adhesive interdigitated electrodes made of Au coated with poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) are developed, that conform comfortably and reliably to human skin. It is shown that the PEDOT:PSS coating improves safety by significantly reducing the voltage required to inject current. The selectivity of the device is assessed by showing that it elicits a significantly slower reaction time than commercial cutaneous electrophysiology electrodes, as it exclusively activates unmyelinated fibers. The device is further evaluated on volunteers that undergo local capsaicin treatment to induce temporary loss of the nerve endings of small‐fibers. Pre‐ and post‐treatment electrical stimulation of the affected area with the device reveals impaired sensory detection that is not observed with commercial cutaneous electrophysiology electrodes. These results represent a significant step towards the use of electrical stimulation as a diagnostic and monitoring tool for SFN

Effect of Plasma Treatment on Metal Oxide p–n Thin Film Diodes Fabricated at Room Temperature

Funder: Cambridge Trust; Id: http://dx.doi.org/10.13039/501100003343Abstract: There is a need for a good quality thin film diode using a metal oxide p–n heterojunction as it is an essential component for the realization of flexible large‐area electronics. However, metal oxide‐based diodes normally show poor rectification characteristics whose origin is still poorly understood; this is holding back their use in various applications. A systematic study of the origins of the poor performance is performed based on bias‐stress measurements using a cuprous oxide (Cu2O)/amorphous zinc‐tin oxide (a‐ZTO) heterojunction as an example. This suggests that multiple carrier trapping and thermal release of carriers in defect states stemming from oxygen vacancies at the heterojunction interface is the primary cause of poor rectification. It is demonstrated that a plasma treatment is an effective way to optimize the population of oxygen vacancies at the heterojunction interface based on extensive material analyses, allowing a significant improvement in the diode performance with a much‐enhanced rectification ratio from ≈20 to 10 000, and a consequent facilitation of the next‐generation of ubiquitous electronics

Pulsed transistor operation enables miniaturization of electrochemical aptamer–based sensors

By simultaneously transducing and amplifying, transistors offer advantages over simpler, electrode-based transducers in electrochemical biosensors. However, transistor-based biosensors typically use static (i.e., DC) operation modes that are poorly suited for sensor architectures relying on the modulation of charge transfer kinetics to signal analyte binding. Thus motivated, here we translate the AC “pulsed potential” approach typically used with electrochemical aptamer-based (EAB) sensors to an organic electrochemical transistor (OECT). Specifically, by applying a linearly sweeping square-wave potential to an aptamer-functionalized gate electrode, we produce current modulation across the transistor channel two orders of magnitude larger than seen for the equivalent, electrode-based biosensor. Unlike traditional EAB sensors, our aptamer-based OECT (AB-OECT) sensors critically maintain output current even with miniaturization. The pulsed transistor operation demonstrated here could be applied generally to sensors relying on kinetics-based signaling, expanding opportunities for non-invasive and high spatial resolution biosensing.Engineering and Physical Sciences Research 358 Council (EP/L016087/1) Natural Environment Research Council (NERC) under Award No. NE/T012293/1 European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No. 101022365 Cambridge International & Churchill Pochobradsky Scholarshi

Highly Sensitive and Tunable Organic Voltage Amplifiers Based on Inkjet-Printed Organic Electrochemical Transistors for In Vivo Recordings of Brain Activity

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Tunable Organic Active Neural Probe Enabling Near-Sensor Signal Processing.

Neural recording systems have significantly progressed to provide an advanced understanding and treatment for neurological diseases. Flexible transistor-based active neural probes exhibit great potential in electrophysiology applications due to their intrinsic amplification capability and tissue-compliant nature. However, most current active neural probes exhibit bulky back-end connectivity since the output is current, and the development of an integrated circuit for voltage output is crucial for near-sensor signal processing at the abiotic/biotic interface. Here, inkjet-printed organic voltage amplifiers are presented by monolithically integrating organic electrochemical transistors and thin-film polymer resistors on a single, highly flexible substrate for in vivo brain activity recording. Additive inkjet printing enables the seamless integration of multiple active and passive components on the somatosensory cortex, leading to significant noise reduction over the externally connected typical configuration. It also facilitates fine-tuning of the voltage amplification and frequency properties. The organic voltage amplifiers are validated as electrocorticography devices in a rat in vivo model, showing their ability to record local field potentials in an experimental model of spontaneous and epileptiform activity. These results bring organic active neural probes to the forefront in applications where efficient sensory data processing is performed at sensor endpoints