Characterization of polybenzimidazole (PBI) film at high temperatures

Polybenzimidazole, a linear thermoplastic polymer with excellent thermal stability and strength retention over a wide range of temperatures, was evaluated for its potential use as the main dielectric in high temperature capacitors. The film was characterized in terms of its dielectric properties in a frequency range of 50 Hz to 100 kilo-Hz. These properties, which include the dielectric constant and dielectric loss, were also obtained in a temperature range from 20 C to 300 C with an electrical stress of 60 Hz, 50 V/mil present. The alternating and direct current breakdown voltages of silicone oil impregnated films as a function of temperature were also determined. The results obtained indicate that while the film remained relatively stable up to 200 C, it exhibited an increase in its dielectric properties as the temperature was raised to 300 C. It was also found that conditioning of the film by heat treatment at 60 C for six hours tended to improve its dielectric and breakdown properties. The results are discussed and conclusions made concerning the suitability of the film as a high temperature capacitor dielectric

Stability of a Crystal Oscillator, Type Si530, Inside and Beyond its Specified Operating Temperature Range

Data acquisition and control systems depend on timing signals for proper operation and required accuracy. These clocked signals are typically provided by some form of an oscillator set to produce a repetitive, defined signal at a given frequency. Crystal oscillators are commonly used because they are less expensive, smaller, and more reliable than other types of oscillators. Because of the inherent characteristics of the crystal, the oscillators exhibit excellent frequency stability within the specified range of operational temperature. In some cases, however, some compensation techniques are adopted to further improve the thermal stability of a crystal oscillator. Very limited data exist on the performance and reliability of commercial-off-the-shelf (COTS) crystal oscillators at temperatures beyond the manufacturer's specified operating temperature range. This information is very crucial if any of these parts were to be used in circuits designed for use in space exploration missions where extreme temperature swings and thermal cycling are encountered. This report presents the results of the work obtained on the operation of Silicon Laboratories crystal oscillator, type Si530, under specified and extreme ambient temperatures

SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

Extreme temperatures, both hot and cold, are anticipated in many of NASA space exploration missions as well as in terrestrial applications. One can seldom find electronics that are capable of operation under both regimes. Even for operation under one (hot or cold) temperature extreme, some thermal controls need to be introduced to provide appropriate ambient temperatures so that spacecraft on-board or field on-site electronic systems work properly. The inclusion of these controls, which comprise of heating elements and radiators along with their associated structures, adds to the complexity in the design of the system, increases cost and weight, and affects overall reliability. Thus, it would be highly desirable and very beneficial to eliminate these thermal measures in order to simplify system's design, improve efficiency, reduce development and launch costs, and improve reliability. These requirements can only be met through the development of electronic parts that are designed for proper and efficient operation under extreme temperature conditions. Silicon-on-insulator (SOI) based devices are finding more use in harsh environments due to the benefits that their inherent design offers in terms of reduced leakage currents, less power consumption, faster switching speeds, good radiation tolerance, and extreme temperature operability. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. The objective of this work was to evaluate the performance of a new commercial-off-the-shelf (COTS) SOI parts over an extended temperature range and to determine the effects of thermal cycling on their performance. The results will establish a baseline on the suitability of such devices for use in space exploration missions under extreme temperatures, and will aid mission planners and circuit designers in the proper selection of electronic parts and circuits. The electronic part investigated in this work comprised of a CHT-NMOS80 high temperature N-channel MOSFET (metal-oxide semiconductor field-effect transistor) device that was manufactured by CISSOID. This high voltage, medium-power transistor is fabricated using SOI processes and is designed for extreme wide temperature applications such as geothermal well logging, aerospace and avionics, and automotive industry. It has a high DC current capability and is specified for operation in the temperature range of -55 C to +225

Performance of a 100V Half-Bridge MOSFET Driver, Type MIC4103, Over a Wide Temperature Range

The operation of a high frequency, high voltage MOSFET (metal-oxide semiconductor field-effect transistors) driver was investigated over a wide temperature regime that extended beyond its specified range. The Micrel MIC4103 is a 100V, non-inverting, dual driver that is designed to independently drive both high-side and low-side N-channel MOSFETs. It features fast propagation delay times and can drive 1000 pF load with 10ns rise times and 6 ns fall times [1]. The device consumes very little power, has supply under-voltage protection, and is rated for a -40 C to +125 C junction temperature range. The floating high-side driver of the chip can sustain boost voltages up to 100 V. Table I shows some of the device manufacturer s specification

Wide-Range Temperature Sensors with High-Level Pulse Train Output

Two types of temperature sensors have been developed for wide-range temperature applications. The two sensors measure temperature in the range of -190 to +200 C and utilize a thin-film platinum RTD (resistance temperature detector) as the temperature-sensing element. Other parts used in the fabrication of these sensors include NPO (negative-positive- zero) type ceramic capacitors for timing, thermally-stable film or wirewound resistors, and high-temperature circuit boards and solder. The first type of temperature sensor is a relaxation oscillator circuit using an SOI (silicon-on-insulator) operational amplifier as a comparator. The output is a pulse train with a period that is roughly proportional to the temperature being measured. The voltage level of the pulse train is high-level, for example 10 V. The high-level output makes the sensor less sensitive to noise or electromagnetic interference. The output can be read by a frequency or period meter and then converted into a temperature reading. The second type of temperature sensor is made up of various types of multivibrator circuits using an SOI type 555 timer and the passive components mentioned above. Three configurations have been developed that were based on the technique of charging and discharging a capacitor through a resistive element to create a train of pulses governed by the capacitor-resistor time constant. Both types of sensors, which operated successfully over the wide temperature range, have potential use in extreme temperature environments including jet engines and space exploration missions

Extreme Temperature Operation of a 10 MHz Silicon Oscillator Type STCL1100

The performance of STMicroelectronics 10 MHz silicon oscillator was evaluated under exposure to extreme temperatures. The oscillator was characterized in terms of its output frequency stability, output signal rise and fall times, duty cycle, and supply current. The effects of thermal cycling and re-start capability at extreme low and high temperatures were also investigated. The silicon oscillator chip operated well with good stability in its output frequency over the temperature region of -50 C to +130 C, a range that by far exceeded its recommended specified boundaries of -20 C to +85 C. In addition, this chip, which is a low-cost oscillator designed for use in applications where great accuracy is not required, continued to function at cryogenic temperatures as low as - 195 C but at the expense of drop in its output frequency. The STCL1100 silicon oscillator was also able to re-start at both -195 C and +130 C, and it exhibited no change in performance due to the thermal cycling. In addition, no physical damage was observed in the packaging material due to extreme temperature exposure and thermal cycling. Therefore, it can be concluded that this device could potentially be used in space exploration missions under extreme temperature conditions in microprocessor and other applications where tight clock accuracy is not critical. In addition to the aforementioned screening evaluation, additional testing, however, is required to fully establish the reliability of these devices and to determine their suitability for long-term use

Performance of MEMS Silicon Oscillator, ASFLM1, under Wide Operating Temperature Range

Over the last few years, MEMS (Micro-Electro-Mechanical Systems) resonator-based oscillators began to be offered as commercial-off-the-shelf (COTS) parts by a few companies [1-2]. These quartz-free, miniature silicon devices could compete with the traditional crystal oscillators in providing the timing (clock function) for many digital and analog electronic circuits. They provide stable output frequency, offer great tolerance to shock and vibration, and are immune to electro-static discharge [1-2]. In addition, they are encapsulated in compact lead-free packages, cover a wide frequency range (1 MHz to 125 MHz), and are specified, depending on the grade, for extended temperature operation from -40 C to +85 C. The small size of the MEMS oscillators along with their reliability and thermal stability make them candidates for use in space exploration missions. Limited data, however, exist on the performance and reliability of these devices under operation in applications where extreme temperatures or thermal cycling swings, which are typical of space missions, are encountered. This report presents the results of the work obtained on the evaluation of an ABRACON Corporation MEMS silicon oscillator chip, type ASFLM1, under extreme temperatures

Performance of the Micropower Voltage Reference ADR3430 Under Extreme Temperatures

Electronic systems designed for use in space exploration systems are expected to be exposed to harsh temperatures. For example, operation at cryogenic temperatures is anticipated in space missions such as polar craters of the moon (-223 C), James Webb Space Telescope (-236 C), Mars (-140 C), Europa (-223 C), Titan (-178 C), and other deep space probes away from the sun. Similarly, rovers and landers on the lunar surface, and deep space probes intended for the exploration of Venus are expected to encounter high temperature extremes. Electronics capable of operation under extreme temperatures would not only meet the requirements of future spacebased systems, but would also contribute to enhancing efficiency and improving reliability of these systems through the elimination of the thermal control elements that present electronics need for proper operation under the harsh environment of space. In this work, the performance of a micropower, high accuracy voltage reference was evaluated over a wide temperature range. The Analog Devices ADR3430 chip uses a patented voltage reference architecture to achieve high accuracy, low temperature coefficient, and low noise in a CMOS process [1]. The device combines two voltages of opposite temperature coefficients to create an output voltage that is almost independent of ambient temperature. It is rated for the industrial temperature range of -40 C to +125 C, and is ideal for use in low power precision data acquisition systems and in battery-powered devices. Table 1 shows some of the manufacturer s device specifications

Reliability of Electronics for Cryogenic Space Applications Being Assessed

Many future NASA missions will require electronic parts and circuits that can operate reliably and efficiently in extreme temperature environments below typical device specification temperatures. These missions include the Mars Exploration Laboratory, the James Webb Space Telescope, the Europa Orbiter, surface rovers, and deep-space probes. In addition to NASA, the aerospace and commercial sectors require cryogenic electronics in applications that include advanced satellites, military hardware, medical instrumentation, magnetic levitation, superconducting energy management and distribution, particle confinement and acceleration, and arctic missions. Besides surviving hostile space environments, electronics capable of low-temperature operation would enhance circuit performance, improve system reliability, extend lifetime, and reduce development and launch costs. In addition, cryogenic electronics are expected to result in more efficient systems than those at room temperature

Effects of Temperature on the Performance and Stability of Recent COTS Silicon Oscillators

Silicon oscillators have lately emerged to serve as potential replacement for crystal and ceramic resonators to provide timing and clock signals in electronic systems. These semiconductor-based devices, including those that are based on MEMS technology, are reported to be resistant to vibration and shock (an important criteria for systems to be deployed in space), immune to EMI, consume very low current, require few or no external components, and cover a wide range of frequency for analog and digital circuits. In this work, the performance of five recently-developed COTS silicon oscillator chips from different manufacturers was determined within a temperature range that extended beyond the individual specified range of operation. In addition, restart capability at extreme temperatures, i.e. power switched on while the device was soaking at extreme (hot or cold) temperature, and the effects of thermal cycling under a wide temperature range on the operation of these silicon oscillators were also investigated. Performance characterization of each oscillator was obtained in terms of its output frequency, duty cycle, rise and fall times, and supply current at specific test temperatures. The five different oscillators tested operated beyond their specified temperature region, with some displaying excellent stability throughout the whole test temperature range. Others experienced some instability at certain temperature test points as evidenced by fluctuation in the output frequency. Recovery from temperature-induced changes took place when excessive temperatures were removed. It should also be pointed out that all oscillators were able to restart at the extreme test temperatures and to withstand the limited thermal cycling without undergoing any significant changes in their characteristics. In addition, no physical damage was observed in the packaging material of any of these silicon oscillators due to extreme temperature exposure and thermal cycling. It is recommended that additional and more comprehensive testing under long term cycling be carried out to fully establish the reliability of these devices and to determine their suitability for use in space exploration missions under extreme temperature conditions