Current-induced magnetization reversal in a (Ga,Mn)As-based magnetic tunnel junction

We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is asymmetric with respect to the current direction is found with the excitation current of 10^6 A/cm^2. Contributions of both unpolarized and spin-polarized components are examined, and we conclude that the partial magnetization reversal occurs in the (Ga,Mn)As layer of smaller magnetization with the spin-polarized tunneling current of 10^5 A/cm^2.Comment: 13 pages, 3 figure

Coherency of the superconducting state: the muon spin rotation and ARPES studies of (BiPb)_2(SrLa)_2CuO_{6+\delta}

The superfluid density \rho_s in underdoped (T_c\simeq23K), optimally doped (T_c\simeq35K) and overdoped (T_c\simeq29K) single crystalline (BiPb)_2(SrLa)_2CuO_{6+\delta} samples was studied by means of muon-spin rotation (\muSR). By combining the \muSR data with the results of ARPES measurements on similar samples [Nature 457, 296 (2009)] good self-consistent agreement is obtained between two techniques concerning the temperature and the doping evolution of \rho_s.Comment: 4 pages, 3 figures

Giant magnetoelectric effect in an L 2₁-ordered Co₂FeSi/Pb(Mg₁/₃Nb₂/₃)O₃-PbTiO₃ multiferroic heterostructure

We experimentally show a giant magnetoelectric (ME) effect at room temperature in an interfacial multiferroic heterostructure consisting of L2₁-ordered Co₂FeSi and Pb(Mg₁/₃Nb₂/₃)O₃-PbTiO₃ (PMN-PT). Molecular beam epitaxy growth at 400 °C enables us to obtain epitaxial and L2₁-ordered Co₂FeSi films on PMN-PT(001). For the epitaxial Co₂FeSi/PMN-PT heterostructure, the remanent magnetization state can be largely modulated by varying electric fields. We note that the room-temperature ME coupling coefficient (α) is estimated to be 6.0-6.3 × 10 - ⁶ s/m, comparable to the highest α value reported previously. Nonvolatile and repeatable magnetization changes in remanent states are also demonstrated. These results will pave the way for room-temperature electric-field control of the magnetization of half-metallic Heusler alloys in high-performance spintronic devices.T. Usami, S. Fujii, S. Yamada, Y. Shiratsuchi, R. Nakatani, and K. Hamaya, Appl. Phys. Lett. 118, 142402 (2021); https://doi.org/10.1063/5.004409

Effect of Fe atomic layers at the ferromagnet-semiconductor interface on temperature-dependent spin transport in semiconductors

Using artificially controlled ferromagnet (FM)-semiconductor (SC) interfaces, we study the decay of the nonlocal spin signals with increasing temperature in SC-based lateral spin-valve devices. When more than five atomic layers of Fe are inserted at the FM/SC interfaces, the temperature-dependent spin injection/detection efficiency (P inj /det) can be interpreted in terms of the T3/2 law, meaning a model of the thermally excited spin waves in the FM electrodes. For the FM/SC interfaces with the insufficient insertion of Fe atomic layers, on the other hand, the decay of P inj /det is more rapid than the T3/2 curve. Using magneto-optical Kerr effect measurements, we find that more than five atomic layers of Fe inserted between FM and SC enable us to enhance the ferromagnetic nature of the FM/SC heterointerfaces. Thus, the ferromagnetism in the ultra-thin FM layer just on top of SC is strongly related to the temperature-dependent nonlocal spin transport in SC-based lateral spin-valve devices. We propose that the sufficient ferromagnetism near the FM/SC interface is essential for high-performance FM-SC hybrid devices above room temperature.M. Yamada, Y. Shiratsuchi, H. Kambe, K. Kudo, S. Yamada, K. Sawano, R. Nakatani, and K. Hamaya, Journal of Applied Physics 129, 183901 (2021); https://doi.org/10.1063/5.0048321

Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor

Using controlled ferromagnet (FM) -semiconductor (SC) interfaces in SC-based lateral spin-valve (LSV) devices, we experimentally study the effect of interfacial spin moments in FM-SC heterojunctions on spin transport in SC. First-principles calculations predict that the spin moment of FM-SC junctions can be artificially reduced by inserting 3d transition metal V, Cr, or Cu atomic layers between FM and SC. When all-epitaxial FM-SC Schottky-tunnel contacts with a 0.4-0.5-nm-thick V, Cr, or Cu interfacial layer are formed, we find that the spin signals in FM-SC LSV devices are significantly decreased at 8 K. When we increase the interfacial spin moment by inserting an ∼0.3-nm-thick Co layer between FM and SC, the spin signals at 8 K are significantly enhanced again. From these experiments, we conclude that the interfacial spin moments at FM-SC interfaces are one of the important factors to achieve large spin signals even in SC-based spintronic devices.T. Naito, R. Nishimura, M. Yamada, A. Masago, Y. Shiratsuchi, Y. Wagatsuma, K. Sawano, R. Nakatani, T. Oguchi, and K. Hamaya, Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor, Phys. Rev. B 105, 195308

The antiphase boundary in half-metallic Heusler alloy Co2Fe(Al,Si) : atomic structure, spin polarization reversal, and domain wall effects

Atomic resolution scanning transmission electron microscopy reveals the presence of an antiphase boundary in the half-metallic Co2Fe(Al,Si) full Heusler alloy. By employing the density functional theory calculations, we show that this defect leads to reversal of the sign of the spin-polarization in the vicinity of the defect. In addition, we show that this defect reduces the strength of the exchange interactions, without changing the ferromagnetic ordering across the boundary. Atomistic spin calculations predict that this effect reduces the width of the magnetic domain wall compared to that in the bulk

Topology and Homoclinic Trajectories of Discrete Dynamical Systems

We show that nontrivial homoclinic trajectories of a family of discrete, nonautonomous, asymptotically hyperbolic systems parametrized by a circle bifurcate from a stationary solution if the asymptotic stable bundles Es(+{\infty}) and Es(-{\infty}) of the linearization at the stationary branch are twisted in different ways.Comment: 19 pages, canceled the appendix (Properties of the index bundle) in order to avoid any text overlap with arXiv:1005.207

Disentangling Cooper-pair formation above Tc from the pseudogap state in the cuprates

The discovery of the pseudogap in the cuprates created significant excitement amongst physicists as it was believed to be a signature of pairing, in some cases well above the room temperature. In this "pre-formed pairs" scenario, the formation of pairs without quantum phase rigidity occurs below T*. These pairs condense and develop phase coherence only below Tc. In contrast, several recent experiments reported that the pseudogap and superconducting states are characterized by two different energy scales, pointing to a scenario, where the two compete. However a number of transport, magnetic, thermodynamic and tunneling spectroscopy experiments consistently detect a signature of phase-fluctuating superconductivity above leaving open the question of whether the pseudogap is caused by pair formation or not. Here we report the discovery of a spectroscopic signature of pair formation and demonstrate that in a region of the phase diagram commonly referred to as the "pseudogap", two distinct states coexist: one that persists to an intermediate temperature Tpair and a second that extends up to T*. The first state is characterized by a doping independent scaling behavior and is due to pairing above Tc, but significantly below T*. The second state is the "proper" pseudogap - characterized by a "checker board" pattern in STM images, the absence of pair formation, and is likely linked to Mott physics of pristine CuO2 planes. Tpair has a universal value around 130-150K even for materials with very different Tc, likely setting limit on highest, attainable Tc in cuprates. The observed universal scaling behavior with respect to Tpair indicates a breakdown of the classical picture of phase fluctuations in the cuprates.Comment: 9 pages, 4 figure

Magnetic and structural depth profiles of Heusler alloy Co2FeAl0.5Si0.5 epitaxial films on Si(1 1 1)

The depth-resolved chemical structure and magnetic moment of Co2FeAl0.5Si0.5, thin films grown on Si(1 1 1) have been determined using x-ray and polarized neutron reflectometry. Bulk-like magnetization is retained across the majority of the film, but reduced moments are observed within 45˚A of the surface and in a 25˚A substrate-interface region. The reduced moment is related to compositional changes due to oxidation and diffusion, which are further quantified by elemental profiling using electron microscopy with electron energy loss spectroscopy. The accuracy of structural and magnetic depth-profiles obtained from simultaneous modeling is discussed using different approaches with different degree of constraints on the parameters. Our approach illustrates the challenges in fitting reflectometry data from these multi-component quaternary Heusler alloy thin films