Single-photon generation from a nitrogen impurity center in GaAs

We have demonstrated single-photon emission from a nitrogen luminescence center in GaAs. An inhomogeneously broadened luminescence band formed by localized centers was observed in the spectral range from 1480 meV to 1510 meV at 5 K in nitrogen delta-doped GaAs. Optical properties of the individual centers were investigated by steady-state and time-resolved micro photoluminescence. We have found that a bright luminescence center emits single photons with a radiative lifetime of 650 ps, which is much shorter than the lifetime of NN pairs in previous reports