Computationally efficient quantum-mechanical technique to calculate direct tunnelling gate leakage current in metal-oxide-semiconductor structures

We propose a computationally efficient, accurate and numerically stable quantum- mechanical technique to calculate the direct tunneling (DT)gate current in metal-oxide-semiconductor (MOS) structures. Knowledge of the imaginary part G of the complex eigenenergy of the quasi-bound inversion layer states is required to estimate the lifetimes of these states. Exploiting the numerically obtained exponential dependence of G on the thickness of the gate-dielectric layer even in the sub-1-nm-thickness regime, we have simplified the determination of G in devices where it is too small to be calculated directly. It is also shown that the MOS electrostatics, calculated self-consistently with open boundary conditions, is independent of the dielectric layer tickness provided that the other parameters remain unchanged. Utilizing these findings, a computationally efficient and numerically stable method is developed for calculating the tunneling current–gate voltage characteristics. The validity of the proposed model is demonstrated by comparing simulation results with experimental data. Sample calculations for MOS transistors with high-K gate-dielectric materials are also presented. This model is particularly suitable for DT current calculation in devices with thicker gate dielectrics and in device or process characterization from the tunneling current measurement

Simulation of reconstructions of the polar ZnO (0001) surfaces

Surface reconstructions on the polar ZnO(0001) surface are investigated using empirical potential models. Several possible reconstructions based around triangular motifs are investigated. The quenching of the dipole moment in the material dominates the energetics of the surface patterns so that no one particular size of surface triangular island or pit is strongly favoured. We employ Monte Carlo simulations to explore which patterns emerge from a high temperature quench and during deposition of additional ZnO monolayers. The simulations show that a range of triangular islands and pits evolve in competition with one another. The surface patterns we discover are qualitatively similar to those observed experimentally

Self-machinery?: steel trusses and the management of ruptures in eighteenth-century Europe

Abstract: Effectiveness Of Rice Husk Ash And Poly Aluminum Chloride In Reducing Exposure Colour Liquid Waste Industry Sasirangan. Sasirangan fabric industry is the textile of industry in Kalimantan Selatan produce wastewater of dyeing cloth sasirangan process that uses water as a primary adjuvant in stage process.The study aims to determine the effectiveness of rice husk ash and Poly Aluminium Chloridereduce levels of dyes in wastewater sasirangan "Oriens Handycraft". This study tested a laboratory scale with dose variation of rice husk ash and Poly Aluminium Chloride for reduced levels of dyes in wastewater sasirangan. The study design is a randomized pretest - posttest control group design. The population of the waste liquid fabric manufacturesasirangan results and samples are the waste from the manufacture of cloth sasirangan which represents the population. This study conduct statistical tests usingKruskal Wallis and Mann-Whitney Test.Theresultsofthestudyof color levels priorto treatment equal to 2,712 PtCo and after treatment ranges from 676.3 to 978.7 PtCo at a dose of 58 grams of rice husk ash; 59 g; 60 g; 61 g; 62 gr and Poly Aluminium Chloride 0.5 gr. For a dose of 58 grams of rice husk ash; 59 g; 60 g; 61 g; 62 gr and Poly Aluminium Chloride 1 g of color levels before treatment and after PtCo 1775 amounted to 227.7 PtCo ranges up to 240 PtCo. Rice husk ash and Poly Aluminium Chloride effective at pH 6.5 - 7. Results of normality test showed abnormal data. Kruskal Wallis test probability value 0.002 <0.05, there is a difference between the average dosing in the control group and the treatment group and the Mann-Whitney Test probability value of 0.009 (0.018 <0.05), the rice husk ash dosing and Poly Aluminium Chloride 1 g more effective than rice husk ash dosing and Poly Aluminium Chloride 0.5 g.Efforts government can do is provide the appropriate policy on effluent quality standards and attention to industrial waste disposal sasirangan. For the industry can manage its waste before waste into the environment. Keywords: SasiranganWaste; Materials coagulant; pH; Dye

Evidence for Action on HIV Treatment and Care Systems in low and middle-income countries: background and introduction.

Despite the unprecedented scale-up of treatment for HIV in low and middle-income countries over the past decade, 49% of adults and 77% of children in need of HIV treatment still do not have access to it. ART programmes that were initially set up as an emergency response now need to be adapted to ensure that they include all the essential components and are well integrated with other health services; meet the needs of special groups, including children, adolescents, pregnant women and older people; address the mental health needs of HIV-positive people; and monitor as well as report their impact in valid and comparable ways.This supplement is an output from the Evidence for Action on HIV Treatment and Care Systems research programme consortium. Evidence for Action was a 5-year, multidisciplinary research programme, which ran from 2006 to 2011, with partners in India, Malawi, Uganda, Zambia and the United Kingdom.The primary aim of this supplement is to stimulate reflection and provide guidance on what should be in the package of HIV treatment and care systems, as national programmes look to maintain the major advances of the past decade and scale-up treatment to the other 50% of people in need of it

Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics

Gate capacitance of metal-oxide-semiconductor devices with ultra-thin high-K gate-dielectric materials is calculated taking into account the penetration of wave functions into the gate-dielectric. When penetration effects are neglected, the gate capacitance is independent of the dielectric material for a given equivalent oxide thickness (EOT). Our selfconsistent numerical results show that in the presence of wave function penetration, even for the same EOT, gate capacitance depends on the gate-dielectric material. Calculated gate capacitance is higher for materials with lower conduction band offsets with silicon. We have investigated the effects of substrate doping density on the relative error in gate capacitance due to neglecting wave function penetration. It is found that the error decreases with increasing doping density. We also show that accurate calculation of the gate capacitance including wave function penetration is not critically dependent on the value of the electron effective mass in the gate-dielectric region