2 research outputs found

    Highly Sensitive Flexible Photodetectors Based on Self-Assembled Tin Monosulfide Nanoflakes with Graphene Electrodes

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    Tin monosulfide (SnS) nanostructures have attracted huge attention recently because of their high absorption coefficient, high photoconversion efficiencies, low energy cost, ease of deposition, and so on. Here, in this paper, we report on the low-cost hydrothermal synthesis of the self-assembled SnS nanoflake-like structures in terms of performance for the photodetectors. High-performance photodetectors were fabricated using SnS nanoflakes as active layers and graphene as the lateral electrodes. The SnS photodetectors exhibited excellent photoresponse properties with a high responsivity of 1.7 × 10<sup>4</sup> A/W and have fast response and recovery times. In addition, the photodetectors exhibited long-term stability and strong dependence of photocurrent on light intensity. These excellent characteristics were attributed to the larger surface-to-volume ratio of the self-assembled SnS nanoflakes and the effective separation of the photogenerated carriers at graphene/SnS interfaces. Additionally, a flexible photodetector based on SnS nanoflakes was also fabricated on a flexible substrate that demonstrated similar photosensitive properties. Furthermore, this study also demonstrates the potential of hydrothermal-processed SnS nanoflakes for high-performance photodetectors and their application in flexible low-cost optoelectronic devices

    Laterally Selective Oxidation of Large-Scale Graphene with Atomic Oxygen

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    Using X-ray photoemission microscopy, we discovered that oxidation of commercial large-scale graphene on Cu foil, which typically has bilayer islands, by atomic oxygen proceeds with the formation of the specific structures: though relatively mobile epoxy groups are generated uniformly across the surface of single-layer graphene, their concentration is significantly lower for bilayer islands. More oxidized species like carbonyl and lactones are preferably located at the centers of these bilayer islands. Such structures are randomly distributed over the surface with a mean density of about 3× 10<sup>6</sup> cm<sup>–2</sup> in our case. Using a set of advanced spectromicroscopy instruments including Raman microscopy, X-ray photoelectron spectroscopy (μ-XPS), Auger electron spectroscopy (nano-AES), and angle-resolved photoelectron spectroscopy (μ-ARPES), we found that the centers of the bilayer islands where the second layer nucleates have a high defect concentration and serve as the active sites for deep oxidation. This information can be potentially useful in developing lateral heterostructures for electronics and optoelectronics based on graphene/graphene oxide heterojunction
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