Quantum light sources based on deterministic microlenses structures with (111) In(Ga)As and AlInAs QDs.

The results of the development and implementation of a single photon source based on a bottom semiconductor Bragg reflector, top deterministic GaAs microlens structures and a single (111) In(Ga)As QD are presented. The structure of the microcavity ensures effective pumping of a single (111) In(Ga)As QD and high emission output efficiency, a clear single – photon emission was detected with a second – order correlation function at zero delay g(2)(0) = 0.07. A system of QD’s on the basis of AlXIn1-XAs/AlYGa1-YAs solid solutions has been studied. The usage of broadband AlXIn1-XAs solid solutions as the basis of quantum dots makes it possible to expand considerably the spectral emission range into the short-wave region, including the wavelength region near 770 nm being of interest for the design of aerospace systems of quantum cryptography. The optical characteristics of single AlXIn1-XAs quantum dots grown according to the Stranski–Krastanov mechanism are studied by the cryogenic microphotoluminescence method

On 3D inelastic analysis methods for hot section components

Accomplishments are described for the 2-year program, to develop advanced 3-D inelastic structural stress analysis methods and solution strategies for more accurate and cost effective analysis of combustors, turbine blades and vanes. The approach was to develop a matrix of formulation elements and constitutive models. Three constitutive models were developed in conjunction with optimized iterating techniques, accelerators, and convergence criteria within a framework of dynamic time incrementing. Three formulations models were developed; an eight-noded mid-surface shell element, a nine-noded mid-surface shell element and a twenty-noded isoparametric solid element. A separate computer program was developed for each combination of constitutive model-formulation model. Each program provides a functional stand alone capability for performing cyclic nonlinear structural analysis. In addition, the analysis capabilities incorporated into each program can be abstracted in subroutine form for incorporation into other codes or to form new combinations

Single-photon emission from InGaAs quantum dots grown on (111) GaAs

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 96, 093112 (2010) and may be found at https://doi.org/10.1063/1.3337097.In this letter, we demonstrate that self-organized InGaAs quantum dots (QDs) grown on GaAs (111) substrate using droplet epitaxy have great potential for the generation of entangled photon pairs. The QDs show spectrally sharp luminescence lines and low spatial density. A second order correlation value of g(2)(0)<0.3 proves single-photon emission. By comparing the power dependence of the luminescence from a number of QDs we identify a typical luminescence fingerprint. In polarization dependent microphotoluminescence studies a fine-structure splitting ranging ≤40eV down to the determination limit of our setup (10eV) was observed.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

Lateral positioning of InGaAs quantum dots using a buried stressor

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 100, 093111 (2012) and may be found at https://doi.org/10.1063/1.3691251.We present a “bottom-up” approach for the lateral alignment of semiconductor quantum dots (QDs) based on strain-driven self-organization. A buried stressor formed by partial oxidation of (Al,Ga)As layers is employed in order to create a locally varying strain field at a GaAs(001) growth surface. During subsequent strained layer growth, local self-organization of (In,Ga)As QDs is controlled by the contour shape of the stressor. Large vertical separation of the QD growth plane from the buried stressor interface of 150 nm is achieved enabling high optical quality of QDs. Optical characterization confirms narrow QD emission lines without spectral diffusion.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

Forward Raman scattering in GaAs/AlAs superlattices: Study of optical phonon anisotropy

We present the forward Raman scattering study of zone-centre optical phonon anisotropy in short-period GaAs/AlAs superlattices. Experiments were performed on specially prepared superlattice structures having anti-reflection dielectric coatings and removed substrates. The experimental data are compared with the angular dispersion of superlattice optical phonons calculated within the dielectric susceptibility model. We have found a good agreement between the experimental data and the calculations taking into account interface disorder